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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 14 of 14  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE, OPE, CPM, EMD, R 2023-08-24
Miyagi Tohoku university
(Primary: On-site, Secondary: Online)
[Invited Talk] Development Progress of InP-based Butt-joint Waveguide Photodetectors
Takuya Okimoto, Hideki Yagi (SEI), Yoshihiro Yoneda (SEDI) R2023-21 EMD2023-16 CPM2023-26 OPE2023-65 LQE2023-12
In order to satisfy the expansion of communication demands in data center networks and support the development of beyond... [more] R2023-21 EMD2023-16 CPM2023-26 OPE2023-65 LQE2023-12
PN 2022-11-07
(Primary: On-site, Secondary: Online)
[Invited Talk] Spot size converter having two stories employing anisotropic etching process
Hajime Tanaka (SEI), Ryuji Yamabi (SEDI), Takamitsu Kitamura (SEDI/SEI), Hotino Kazuhiko (SEDI), Ishikawa Tsutomu (SEI), Mitsuru Ekawa (SEDI/SEI) PN2022-25
Coherent technology has been widely used from long haul to metro network. InP is a material having unique characteristic... [more] PN2022-25
R, LQE, OPE, CPM, EMD 2020-08-28
Online Online [Invited Talk] InP-based Waveguide Photodetectors for IMDD/Coherent Transmission Applications
Yoshihiro Yoneda, Takuya Okimoto (SEI), Ken Ashizawa, Koji Ebihara, Satoru Okamoto, Kazuhiko Horino (SEDI), Hideki Yagi, Mitsuru Ekawa (SEI) R2020-13 EMD2020-12 CPM2020-5 OPE2020-25 LQE2020-5
Optical receivers for 400 Gb/s and beyond optical communication systems have been required modulation speeds higher than... [more] R2020-13 EMD2020-12 CPM2020-5 OPE2020-25 LQE2020-5
MW, ED 2019-01-18
Tokyo Hitachi, Central Research Lab. The failure mode analysis on GaN-HEMT under High temperature operation
Yasuyo Yotsuda (SEDI), Yasunori Tateno, Takumi Yonemura, Masato Furukawa, Hiroshi Yamamoto (SEI), Yukinori Nose, Satoshi Shimizu (SEDI) ED2018-81 MW2018-148
(To be available after the conference date) [more] ED2018-81 MW2018-148
LQE, OPE, SIPH 2018-12-06
Tokyo Keio University [Encouragement Talk] Wide bandwidth and high responsivity of InP-based waveguide photodiodes for over 400 Gbps coherent transmission systems
Takuya Okimoto (SEDI), Hideki Yagi (SEI), Ryuji Masuyama, Kenji Sakurai, Yoshifumi Nishimoto, Kazuhiko Horino, Takayuki Watanabe (SEDI), Mitsuru Ekawa (SEI), Yoshihiro Yoneda (SEDI) OPE2018-97 LQE2018-107 SIPH2018-13
For high speed coherent transmission system over 400 Gbps, photodetectors for coherent receivers with both the wide band... [more] OPE2018-97 LQE2018-107 SIPH2018-13
LQE 2018-07-12
Hokkaido   [Invited Talk] What will be a compelling technology for beyond-400 Gbps systems; Devices vs. Packaging -- Progress of InP-based Coherent Receivers and Future Prospect of Photonic Integrated Circuits --
Hideki Yagi, Naoko Inoue (SEI), Takuya Okimoto (SEDI), Takehiko Kikuchi (SEI) LQE2018-27
Currently, digital coherent transmission using spectrally-efficient modulation formats has been widely applied to not on... [more] LQE2018-27
R, EMD, CPM, LQE, OPE 2017-09-01
Aomori   Wide Bandwidth and High Responsivity Operation of InP-based Photodetector Monolithically Integrated with 90° Hybrid to Realize Over 400 Gbps Coherent Transmission Systems
Takuya Okimoto (SEDI), Hideki Yagi (SEI), Ryuji Masuyama, Kenji Sakurai, Yoshifumi Nishimoto, Kazuhiko Horino, Takayuki Watanabe (SEDI), Mitsuru Ekawa (SEI), Yoshihiro Yoneda (SEDI) R2017-40 EMD2017-34 CPM2017-55 OPE2017-64 LQE2017-37
In order to realize over 400 Gbps coherent transmission systems, wide bandwidth and high responsivity operation of integ... [more] R2017-40 EMD2017-34 CPM2017-55 OPE2017-64 LQE2017-37
ED 2016-01-20
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] Development of GaN-HEMT for Microwave Applications
Takahisa Kawai (SEDI) ED2015-120
 [more] ED2015-120
MW, ED 2015-01-16
Tokyo Kikai-Shinko-Kaikan Bldg. An X-band 310 W High Power GaN HEMT Amplifier
Ken Kikuchi, Makoto Nishihara, Hiroshi Yamamoto, Shinya Mizuno, Fumikazu Yamaki, Takashi Yamamoto (SEDI) ED2014-126 MW2014-190
A high-output power and broadband GaN high electron mobility transistor (HEMT) has been developed for X-band application... [more] ED2014-126 MW2014-190
ED, MW 2014-01-17
Tokyo Kikai-Shinko-Kaikan Bldg. E-Band Transmitter and Receiver Modules With Simply Reflow-Soldered 3-D WLCSP MMIC's
Koji Tsukashima, Miki Kubota, Osamu Baba, Takeshi Kawasaki, Atsushi Yonamine, Tsuneo Tokumitsu (SEI), Yuichi Hasegawa (SEDI) ED2013-131 MW2013-196
 [more] ED2013-131 MW2013-196
MW, ED 2013-01-18
Tokyo Kikai-Shinko-Kaikan Bldg. 2.6GHz Broadband 40W GaN HEMT Doherty Amplifier
Norihiro Yoshimura, Naoki Watanabe, Hiroaki Deguchi, Norihiko Ui (SEDI) ED2012-120 MW2012-150
A 40W average output power asymmetric Doherty power amplifier (PA) for 2.6GHz band was developed using broadband inverse... [more] ED2012-120 MW2012-150
ED, MW 2012-01-12
Tokyo Kikai-Shinko-Kaikan Bldg Ruggedness and Reliability of GaN HEMT for L/S-band High Power Applications
Ken Kikuchi, Fumikazu Yamaki, Kazutaka Inoue (SEI), Masahiro Nishi, Hitoshi Haematsu, Norihiko Ui, Kaname Ebihara, Atsushi Nitta (SEDI), Seigo Sano (SEI) ED2011-138 MW2011-161
We have evaluated our L/S-band GaN HEMT for ruggedness and reliability. In terms of ruggedness, we demonstrated our GaN ... [more] ED2011-138 MW2011-161
ED, MW 2012-01-12
Tokyo Kikai-Shinko-Kaikan Bldg High Power X-band 200W AlGaN/GaN HEMT
Makoto Nishihara, Takashi Yamamoto (SEDI), Shinya Mizuno, Seigo Sano (SEI), Yuichi Hasegawa (SEDI) ED2011-141 MW2011-164
A 200 Watts GaN high electron mobility transistor (HEMT) has been developed for X-band applications. The device consists... [more] ED2011-141 MW2011-164
ED, MW 2010-01-15
Tokyo Kikai-Shinko-Kaikan Bldg Cost Effective Wafer-Level Chip Size Package Technology and Application for High Speed Wireless Communications.
Seiji Fujita, Masaki Imagawa, Tomio Satoh (SEDI), Tsuneo Tokumitsu (SEI), Yuichi Hasegawa (SEDI) ED2009-195 MW2009-178
Cost effective Ku-band up-mixer and down-mixer MMIC’s, that use a three-dimensional MMIC technology optimized for flip-c... [more] ED2009-195 MW2009-178
 Results 1 - 14 of 14  /   
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