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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ICD |
2012-12-18 13:30 |
Tokyo |
Tokyo Tech Front |
[Invited Talk]
CMOS analog mixed circuit and its applications Shouhei Kousai (Toshiba) ICD2012-118 |
Recent CMOS Analog VLSI has evolved with CMOS Digital circuits and has been enabled various and ubiquitous applications.... [more] |
ICD2012-118 pp.115-120 |
ICD, SDM |
2009-07-16 15:50 |
Tokyo |
Tokyo Institute of Technology |
The Study of Mobility-Tinv Trade-off in Deeply Scaled High-k/Metal Gate Devices and Scaling Design Guideline for 22nm-node Generation Masakazu Goto, Shigeru Kawanaka, Seiji Inumiya, Naoki Kusunoki, Masumi Saitoh, Kosuke Tatsumura, Atsuhiro Kinoshita, Satoshi Inaba, Yoshiaki Toyoshima (Toshiba) SDM2009-107 ICD2009-23 |
The trade-off between Tinv scaling and carrier mobility () degradation in deeply scaled HK/MG nMOSFETs has been ... [more] |
SDM2009-107 ICD2009-23 pp.53-56 |
ICD, ITE-IST |
2008-10-23 11:10 |
Hokkaido |
Hokkaido University |
[Invited Talk]
Analog/RF performance of scaled MOSFET
-- Is scaled MOSFET friend for analog/RF circuits? -- Tatsuya Ohguro (Toshiba) ICD2008-74 |
High performance has been realized by gate length scaling of MOSFET. Recently, not only gate length scaling but also ag... [more] |
ICD2008-74 pp.89-94 |
SDM |
2007-03-15 15:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Key Process Technology of Reliable Sub Micron Capacitor for High Density Chain-FeRAM Koji Yamakawa, Tohru Ozaki, Hiroyuki Kanaya, Iwao Kunishima, Yoshinori Kumura, Yoshiro Shimojo, Susumu Shuto, Osamu Hidaka, Yuki Yamada, Soi chi Yamazaki, Takeshi Hamamoto, Shinichiro Shiratake, Daisaburo Takashima, Tadashi Miyakawa, Sumito Ohtsuki (Toshiba) |
[more] |
SDM2006-259 pp.27-32 |
MW, ED |
2007-01-19 15:50 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
High Voltage and High Frequency( over10MHz) Class-E Power-Supplies Using a GaN-HEMT Wataru Saito (Toshiba Semiconductor), Tomokazu Domon, Kunio Tsuda (Toshiba R & D Center), Ichiro Omura (Toshiba Semiconductor) |
GaN-HEMTs can realize high-voltage and ultra-low on-resistance due to high critical electric field and high electron mob... [more] |
ED2006-237 MW2006-190 pp.205-208 |
ICD, CPM |
2005-09-09 10:55 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Lead-free bumping and its process integrity for fine pitch interconnects Hirokazu Ezawa, Masaharu Seto, Kazuhito Higuchi (Toshiba) |
Electroplated solder bumps allow much finer pitch interconnection for high I/O applications, although controlling the al... [more] |
CPM2005-99 ICD2005-109 pp.17-22 |
EA |
2005-06-24 15:50 |
Saitama |
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1 bit Wavefield Recording/Reproduction System using Electrostatic Microphone and Loudspeaker Shigeto Takeoka, Makoto Kurihara, Masanori Okazaki, Yasuhiro Oikawa (Waseda Univ.), Meisei Nishikawa (TOSHIBA), Yoshio Yamasaki (Waseda Univ.) |
[more] |
EA2005-24 pp.25-30 |
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