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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 7 of 7  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD 2012-12-18
13:30
Tokyo Tokyo Tech Front [Invited Talk] CMOS analog mixed circuit and its applications
Shouhei Kousai (Toshiba) ICD2012-118
Recent CMOS Analog VLSI has evolved with CMOS Digital circuits and has been enabled various and ubiquitous applications.... [more] ICD2012-118
pp.115-120
ICD, SDM 2009-07-16
15:50
Tokyo Tokyo Institute of Technology The Study of Mobility-Tinv Trade-off in Deeply Scaled High-k/Metal Gate Devices and Scaling Design Guideline for 22nm-node Generation
Masakazu Goto, Shigeru Kawanaka, Seiji Inumiya, Naoki Kusunoki, Masumi Saitoh, Kosuke Tatsumura, Atsuhiro Kinoshita, Satoshi Inaba, Yoshiaki Toyoshima (Toshiba) SDM2009-107 ICD2009-23
The trade-off between Tinv scaling and carrier mobility () degradation in deeply scaled HK/MG nMOSFETs has been ... [more] SDM2009-107 ICD2009-23
pp.53-56
ICD, ITE-IST 2008-10-23
11:10
Hokkaido Hokkaido University [Invited Talk] Analog/RF performance of scaled MOSFET -- Is scaled MOSFET friend for analog/RF circuits? --
Tatsuya Ohguro (Toshiba) ICD2008-74
High performance has been realized by gate length scaling of MOSFET. Recently, not only gate length scaling but also ag... [more] ICD2008-74
pp.89-94
SDM 2007-03-15
15:25
Tokyo Kikai-Shinko-Kaikan Bldg. Key Process Technology of Reliable Sub Micron Capacitor for High Density Chain-FeRAM
Koji Yamakawa, Tohru Ozaki, Hiroyuki Kanaya, Iwao Kunishima, Yoshinori Kumura, Yoshiro Shimojo, Susumu Shuto, Osamu Hidaka, Yuki Yamada, Soi chi Yamazaki, Takeshi Hamamoto, Shinichiro Shiratake, Daisaburo Takashima, Tadashi Miyakawa, Sumito Ohtsuki (Toshiba)
 [more] SDM2006-259
pp.27-32
MW, ED 2007-01-19
15:50
Tokyo Kikai-Shinko-Kaikan Bldg. High Voltage and High Frequency( over10MHz) Class-E Power-Supplies Using a GaN-HEMT
Wataru Saito (Toshiba Semiconductor), Tomokazu Domon, Kunio Tsuda (Toshiba R & D Center), Ichiro Omura (Toshiba Semiconductor)
GaN-HEMTs can realize high-voltage and ultra-low on-resistance due to high critical electric field and high electron mob... [more] ED2006-237 MW2006-190
pp.205-208
ICD, CPM 2005-09-09
10:55
Tokyo Kikai-Shinko-Kaikan Bldg. Lead-free bumping and its process integrity for fine pitch interconnects
Hirokazu Ezawa, Masaharu Seto, Kazuhito Higuchi (Toshiba)
Electroplated solder bumps allow much finer pitch interconnection for high I/O applications, although controlling the al... [more] CPM2005-99 ICD2005-109
pp.17-22
EA 2005-06-24
15:50
Saitama   1 bit Wavefield Recording/Reproduction System using Electrostatic Microphone and Loudspeaker
Shigeto Takeoka, Makoto Kurihara, Masanori Okazaki, Yasuhiro Oikawa (Waseda Univ.), Meisei Nishikawa (TOSHIBA), Yoshio Yamasaki (Waseda Univ.)
 [more] EA2005-24
pp.25-30
 Results 1 - 7 of 7  /   
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