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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
MW, ED 2019-01-17
Tokyo Hitachi, Central Research Lab. ED2018-78 MW2018-145 (To be available after the conference date) [more] ED2018-78 MW2018-145
MW, ED 2019-01-17
Tokyo Hitachi, Central Research Lab. Reduction of dislocation density leading improvement of current collapse under high electric-field stress by using GaN-on-GaN structure
Akifumi Imai, Koji Yoshitsugu, Takuma Nanjo, Tatsuro Watahiki, Mikio Yamamuka (Mitsubishi Electric Co.) ED2018-79 MW2018-146
 [more] ED2018-79 MW2018-146
CPM, LQE, ED 2016-12-12
Kyoto Kyoto University Normally-off operation of planar GaN MOS-HFET
Takuma Nanjo, Tetsuro Hayashida, Hidetoshi Koyama, Akifumi Imai, Akihiko Furukawa, Mikio Yamamuka (Mitsubishi Electric) ED2016-63 CPM2016-96 LQE2016-79
Normally-off operation with high drain current density was firstly demonstrated in simple planar type GaN MOS-HFET with ... [more] ED2016-63 CPM2016-96 LQE2016-79
ED, LQE, CPM 2009-11-20
Tokushima Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) Aluminum-Free Ohmic contact on Si implanted nitride semiconductors
Akifumi Imai, Takuma Nanjo, Muneyoshi Suita, Yuji Abe, Eiji Yagyu, Tetsuyuki Kurata (Mitsubishi Electric Corp.) ED2009-153 CPM2009-127 LQE2009-132
 [more] ED2009-153 CPM2009-127 LQE2009-132
ED, SDM, R 2006-11-24
Osaka Central Electric Club *
Shunsuke Kunimatsu, Akifumi Imai (Kyoto Univ.), Kensuke Akiyama (Kanagawa Industrial Technology Center), Yoshihito Maeda (Kyoto Univ.)
 [more] R2006-32 ED2006-177 SDM2006-195
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