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All Technical Committee Conferences (Searched in: All Years)
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| Search Results: Conference Papers |
| Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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| Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
| MW, ED |
2019-01-17
15:25 |
Tokyo |
Hitachi, Central Research Lab. (Tokyo) |
 ED2018-78 MW2018-145 |
(To be available after the conference date) [more] |
ED2018-78 MW2018-145
pp.55-58 |
| MW, ED |
2019-01-17
15:50 |
Tokyo |
Hitachi, Central Research Lab. (Tokyo) |
Reduction of dislocation density leading improvement of current collapse under high electric-field stress by using GaN-on-GaN structure
Akifumi Imai, Koji Yoshitsugu, Takuma Nanjo, Tatsuro Watahiki, Mikio Yamamuka (Mitsubishi Electric Co.) ED2018-79 MW2018-146 |
[more] |
ED2018-79 MW2018-146
pp.59-62 |
| CPM, LQE, ED |
2016-12-12
15:45 |
Kyoto |
Kyoto University (Kyoto) |
Normally-off operation of planar GaN MOS-HFET
Takuma Nanjo, Tetsuro Hayashida, Hidetoshi Koyama, Akifumi Imai, Akihiko Furukawa, Mikio Yamamuka (Mitsubishi Electric) ED2016-63 CPM2016-96 LQE2016-79 |
Normally-off operation with high drain current density was firstly demonstrated in simple planar type GaN MOS-HFET with ... [more] |
ED2016-63 CPM2016-96 LQE2016-79
pp.31-34 |
| ED, LQE, CPM |
2009-11-20
13:10 |
Tokushima |
Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) (Tokushima) |
Aluminum-Free Ohmic contact on Si implanted nitride semiconductors
Akifumi Imai, Takuma Nanjo, Muneyoshi Suita, Yuji Abe, Eiji Yagyu, Tetsuyuki Kurata (Mitsubishi Electric Corp.) ED2009-153 CPM2009-127 LQE2009-132 |
[more] |
ED2009-153 CPM2009-127 LQE2009-132
pp.119-123 |
| ED, SDM, R |
2006-11-24
13:45 |
Osaka |
Central Electric Club (Osaka) |
*
Shunsuke Kunimatsu, Akifumi Imai (Kyoto Univ.), Kensuke Akiyama (Kanagawa Industrial Technology Center), Yoshihito Maeda (Kyoto Univ.) |
[more] |
R2006-32 ED2006-177 SDM2006-195
pp.7-10 |
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