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Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE, ED, CPM 2008-11-27
15:25
Aichi Nagoya Institute of Technology Ultraghin InN/(In)GaN quantum well structure for a new active layer of blue-green light
Song-Bek Che, Akihiko Yuki, Hiroshi Watanabe, Yoshihiro Ishitani, Akihiko Yoshikawa (Chiba Univ.) ED2008-163 CPM2008-112 LQE2008-107
1 monolayer (ML) thick InN quantum well (QW) with InGaN barrier grown by radio-frequency plasma assisted molecular beam ... [more] ED2008-163 CPM2008-112 LQE2008-107
pp.51-56
CPM, ED, LQE 2007-10-12
14:40
Fukui Fukui Univ. Fabrication of novel InN/GaN multi-quantum wells consisting of one-monolayer InN wells in GaN matrix for application for new structure light emitting devices
Naoki Hashimoto, Akihiko Yuki, Hideyuki Saito (Chiba Univ.), Xinqiang Wang (JST), Song-Bek Che, Yoshihiro Ishitani, Akihiko Yoshikawa (Chiba Univ./JST) ED2007-175 CPM2007-101 LQE2007-76
In order to clarify RF-MBE growth mechanism of ultrathin InN on Ga-polarity GaN, we investigated tolal supply of InN dep... [more] ED2007-175 CPM2007-101 LQE2007-76
pp.93-96
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