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Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD 2011-04-19
15:50		 Hyogo Kobe University Takigawa Memorial Hall Switching Mechanism of Perovskite-Oxide-Based Resistive Random Access Memory (ReRAM)
Akihiro Hanada (Tottori Univ.), Kentaro Kinoshita (Tottori Univ./TEDREC), Katsuhiko Matsubara, Takahiro Fukuhara (Tottori Univ.), Satoru Kishida (Tottori Univ./TEDREC) ICD2011-19		 We prepared resistive random access memory (ReRAM) structures of Al / Bi2Sr2CaCu2O8+δ (Bi-2212) bulk single crystal / Pt... [more] ICD2011-19
pp.105-109
SDM 2010-12-17
13:20		 Kyoto Kyoto Univ. (Katsura) [Invited Talk] Estimation of Physical Properties and Control of Memory Performance in ReRAM
Kentaro Kinoshita, Takatoshi Yoda, Hayato Tanaka, Akihiro Hanada, Satoru Kishida (Tottori Univ.) SDM2010-192		  [more] SDM2010-192
pp.39-44
SDM 2010-06-22
16:30		 Tokyo An401・402 Inst. Indus. Sci., The Univ. of Tokyo Research of ReRAM with Copper-oxide superconductor -- Operation clarification of Perovskite type ReRAM --
Katsuhiko Matsubara, Kentaro Kinoshita, Akihiro Hanada, Satoru Kishida (Tottori Univ.) 		 [more]
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