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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2010-06-22
14:10
Tokyo An401・402 Inst. Indus. Sci., The Univ. of Tokyo Relationships among Interface Composition, Bonding Structures and MIS Properties at High-k/III-V Interfaces
Tetsuji Yasuda, Noriyuki Miyata, Yuji Urabe, Hiroyuki Ishii, Taro Itatani, Tatsuro Maeda (AIST), Hisashi Yamada, Noboru Fukuhara, Masahiko Hata (Sumitomo Chemical), Akihiro Ohtake (NIMS), Takuya Hoshii, Masafumi Yokoyama, Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo) SDM2010-42
There has been a significant interest in the III-V channel MISFET technology which expectedly enables performance improv... [more] SDM2010-42
pp.49-54
SDM 2008-06-10
09:55
Tokyo An401・402, Inst. Indus. Sci., The Univ. of Tokyo Gate Dielectrics Interface Control for III-V MISFET
Tetsuji Yasuda, Noriyuki Miyata (AIST), Akihiro Ohtake (NIMS) SDM2008-49
Introduction of III-V semiconductors to the n channel of CMOS devices is one of the options to sustain performance impro... [more] SDM2008-49
pp.41-46
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