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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 4 of 4  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, LQE, CPM 2015-11-27
11:40
Osaka Osaka City University Media Center Dependence of the initial AlN layer of the vertical direction leakage current of the AlGaN/GaN HEMT structure on Silicon substrate
Yuya Yamaoka (TNSC), Kazuhiro Ito (NITech), Akinori Ubukata, Toshiya Tabuchi, Koh Matsumoto (TNSC), Takashi Egawa (NITech) ED2015-83 CPM2015-118 LQE2015-115
In this study, two types of single AlN on Si substrates were grown using different growth conditions. A scanning electro... [more] ED2015-83 CPM2015-118 LQE2015-115
pp.77-80
ED, LQE, CPM 2012-11-29
11:55
Osaka Osaka City University High growth rate AlN and AlGaN on large diameter Si substrate(6inch & 8inch)
Hiroki Tokunaga, Akinori Ubukata, Yoshiki Yano, Yuya Yamaoka, Akira Yamaguchi, Toshiya Tabuchi (TNSC), Kou Matumoto (TNEMC) ED2012-69 CPM2012-126 LQE2012-97
 [more] ED2012-69 CPM2012-126 LQE2012-97
pp.17-20
ED, LQE, CPM 2009-11-20
09:55
Tokushima Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) High rate growth of GaN using 4 inch x 11 multi wafer MOVPE reactor (UR25K)
Yoshiki Yano, Kazutada Ikenaga, Hiroki Tokunaga (Taiyo Nippon Sanso), Jun Yamamoto (TN EMC), Toshiya Tabuchi (Taiyo Nippon Sanso), Kousuke Uchiyama (TN EMC), Akira Yamaguchi, Yasushi Fukuda, Akinori Ubukata (Taiyo Nippon Sanso), Yasuhiro Harada, Yuzaburo Ban, Koh Matsumoto (TN EMC), Toshiaki Yamazaki (Taiyo Nippon Sanso) ED2009-148 CPM2009-122 LQE2009-127
We have developed a multiwafer MOVPE reactor with a capacity of eleven 4 inch wafers(UR25K). In order to shorten the gro... [more] ED2009-148 CPM2009-122 LQE2009-127
pp.95-98
LQE, ED, CPM 2005-10-14
16:10
Shiga Ritsumeikan Univ. PL characterization of In surface segregation in InGaN/GaN Multiple Quantum Well Structures using MOCVD reactor (2” ×6 wafers)
Kazutada Ikenaga, Akinori Ubukata, Akira Yamaguchi, Nakao Akutsu, Kinji Fujii, Koh Matsumoto (TAIYO NIPPON SANSO)
 [more] ED2005-156 CPM2005-143 LQE2005-83
pp.81-84
 Results 1 - 4 of 4  /   
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