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All Technical Committee Conferences (Searched in: All Years)
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| Search Results: Conference Papers |
| Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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| Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
| SDM, ICD |
2011-08-26
09:00 |
Toyama |
Toyama kenminkaikan |
Evaluation of Variability in High-k/Metal-Gate MOSFET using Takeuchi Plot
Tomoko Mizutani, Anil Kumar (Univ. of Tokyo), Akio Nishida, Kiyoshi Takeuchi, Satoshi Inaba, Shiro Kamohara (MIRAI-Selete), Kazuo Terada (Hiroshima City Univ.), Tohru Mogami (MIRAI-Selete), Toshiro Hiramoto (Univ. of Tokyo/MIRAI-Selete)  SDM2011-83 ICD2011-51 |
[more] |
SDM2011-83 ICD2011-51
pp.65-68 |
| SDM, ICD |
2011-08-26
09:25 |
Toyama |
Toyama kenminkaikan |
Statistical Analysis of DIBL and Current-Onset Voltage (COV) Variability in Scaled MOSFETs
Anil Kumar, Tomoko Mizutani (Univ. of Tokyo), Akio Nishida, Kiyoshi Takeuchi, Satoshi Inaba, Shiro Kamohara (MIRAI-Selete), Kazuo Terada (Hiroshima City Univ.), Tohru Mogami (MIRAI-Selete), Toshiro Hiramoto (Univ. of Tokyo/MIRAI-Selete) SDM2011-84 ICD2011-52 |
[more] |
SDM2011-84 ICD2011-52
pp.69-73 |
| ICD, SDM |
2010-08-27
13:20 |
Hokkaido |
Sapporo Center for Gender Equality |
Direct Measurement and Analysis of Static Noise Margin in SRAM Cells Using DMA TEG
Toshiro Hiramoto, Makoto Suzuki, Takuya Saraya, Ken Shimizu (Univ. of Tokyo), Akio Nishida, Shiro Kamohara, Kiyoshi Takeuchi, Tohru Mogami (MIRAI-Selete) SDM2010-144 ICD2010-59 |
[more] |
SDM2010-144 ICD2010-59
pp.111-114 |
| ICD, SDM |
2010-08-27
16:00 |
Hokkaido |
Sapporo Center for Gender Equality |
Random Drain Current Variation Caused by "Current-Onset Voltage" Variability in Scaled MOSFETs
Tomoko Mizutani (Univ. of Tokyo), Takaaki Tsunomura (MIRAI-Selete), Anil Kumar (Univ. of Tokyo), Akio Nishida, Kiyoshi Takeuchi, Satoshi Inaba, Shiro Kamohara (MIRAI-Selete), Kazuo Terada (Hiroshima City Univ.), Tohru Mogami (MIRAI-Selete), Toshiro Hiramoto (Univ. of Tokyo/MIRAI-Selete) SDM2010-150 ICD2010-65 |
It is revealed that drain current variability is fluctuated by “current-onset voltage” as well as threshold voltage VTH ... [more] |
SDM2010-150 ICD2010-65
pp.143-148 |
| SDM |
2009-11-13
13:50 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Random Fluctuations in Scaled MOS Devices
Kiyoshi Takeuchi (MIRAI-Selete/NEC Corp.), Akio Nishida (MIRAI-Selete), Toshiro Hiramoto (MIRAI-Selete/Univ. of Tokyo.) SDM2009-147 |
[more] |
SDM2009-147
pp.67-71 |
| ICD, SDM |
2008-07-17
14:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Special Talk]
Present Status and Future Trend of Characteristic Variations in Scaled CMOS
Toshiro Hiramoto (Univ. of Tokyo/MIRAI-Selete), Kiyoshi Takeuchi, Takaaki Tsunomura (/MIRAI-Selete), Arifin T.Putra (Univ. of Tokyo), Akio Nishida, Shiro Kamohara (/MIRAI-Selete) SDM2008-135 ICD2008-45 |
The variability is one of the most critical issues for further miniaturization of MOS transistors. Although the variabi... [more] |
SDM2008-135 ICD2008-45
pp.41-46 |
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