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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 7 of 7  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
NS, ICM, CQ, NV
(Joint)		 2022-11-25
15:25		 Fukuoka Humanities and Social Sciences Center, Fukuoka Univ. + Online
(Primary: On-site, Secondary: Online)		 [Invited Talk] AI and Sensing Techniques enabled by Post-5G Networks
Takahito Tanimura, Hisanori Matsumoto, Norikatsu Takaura, Akio Shima, Michitaka Okuno (Hitachi) NS2022-126 CQ2022-59 ICM2022-29		 In post-5G/6G era as a successor of current 5G era, it will be realized that both evolving communication functions, such... [more] NS2022-126 CQ2022-59 ICM2022-29
p.136(NS), p.57(CQ), p.30(ICM)
SDM 2016-11-10
11:00		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Channel Properties of SiC Trench-Etched Double-Implanted MOS (TED MOS)
Naoki Tega, Digh Hisamoto, Akio Shima, Yasuhiro Shimamoto (Hitachi) SDM2016-80		 We comprehensively studied the channel properties of a silicon carbide trench-etched double-implanted MOS (SiC TED MOS).... [more] SDM2016-80
pp.9-14
ICD, SDM 2012-08-02
15:55		 Hokkaido Sapporo Center for Gender Equality, Sapporo, Hokkaido Scalable 3-D vertical chain-cell-type phase-change memory with 4F2 poly-Si diodes
Masaharu Kinoshita, Yoshitaka Sasago, Hiroyuki Minemura, Yumiko Anzai, Mitsuharu Tai, Yoshihisa Fujisaki, Shuichi Kusaba, Tadao Morimoto, Takashi Takahama, Toshiyuki Mine, Akio Shima, Yoshiki Yonamoto, Takashi Kobayashi (Hitachi) SDM2012-74 ICD2012-42		 A three-dimensional (3-D) vertical chain-cell-type phase-change memory (VCCPCM) for next-generation large-capacity stora... [more] SDM2012-74 ICD2012-42
pp.59-63
SDM 2011-11-10
13:00		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Phase-change memoy driven by poly-Si transistor enabling three-dimensional stacking
Yoshitaka Sasago, Masaharu Kinoshita, Hiroyuki Minemura, Yumiko Anzai, Mitsuharu Tai, Kenzo Kurotsuchi, Seiichi Morita, Toshikazu Takahashi, Takashi Takahama, Tadao Morimoto, Toshiyuki Mine, Akio Shima, Takashi Kobayashi (Hitachi) SDM2011-117		 A phase-change memory (PCM) driven by poly-Si MOS transistors was fabricated. The thin phase-change-material layer depos... [more] SDM2011-117
pp.11-15
SDM, ICD 2011-08-26
09:50		 Toyama Toyama kenminkaikan Phase-change memory driven by poly-Si MOS transistor with low cost and high-programming throughput
Yoshitaka Sasago, Masaharu Kinoshita, Hiroyuki Minemura, Yumiko Anzai, Mitsuharu Tai, Kenzo Kurotsuchi, Seiichi Morita, Toshikazu Takahashi, Takashi Takahama, Tadao Morimoto, Toshiyuki Mine, Akio Shima, Takashi Kobayashi (Hitachi) SDM2011-85 ICD2011-53		 A phase-change memory (PCM) driven by poly-Si MOS transistors was fabricated. The thin phase-change-material layer depos... [more] SDM2011-85 ICD2011-53
pp.75-78
ITE-MMS, MRIS 2009-10-09
10:25		 Fukuoka FUKUOKA traffic center [Invited Talk] Low cost technology of phase change memory with low-contact-resistivity poly-Si selection diode
Yoshitaka Sasago, Masaharu Kinoshita, Takahiro Morikawa, Kenzo Kurotsuchi, Satoru Hanzawa, Toshiyuki Mine, Akio Shima, Yoshihisa Fujisaki, Hiroshi Moriya, Norikatsu Takaura, Kazuyoshi Torii (Hitachi) MR2009-26		 We have fabricated the cross-point phase change memory with a selection diode made of poly-Si. The selection diode was f... [more] MR2009-26
pp.31-35
ICD, SDM 2009-07-17
12:00		 Tokyo Tokyo Institute of Technology Cross-Point phase change memory with 4F2 cell size driven by low-contact resistivity poly-si diode
Yoshitaka Sasago, Masaharu Kinoshita, Takahiro Morikawa, Kenzo Kurotsuchi, Satoru Hanzawa, Toshiyuki Mine, Akio Shima, Yoshihisa Fujisaki, Hitoshi Kume, Hiroshi Moriya, Norikatsu Takaura, Kazuyoshi Torii (Hitachi) SDM2009-112 ICD2009-28		 We have fabricated the cross-point phase change memory with a selection diode made of poly-Si. The selection diode was f... [more] SDM2009-112 ICD2009-28
pp.79-83
 Results 1 - 7 of 7  /   
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