| IEICE Technical Committee Submission System Conference Schedule |
Online Proceedings [Sign in] Tech. Rep. Archives |
All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| WPT (2nd) |
2022-12-05 - 2022-12-06 |
Kyoto | Uji Obaku Plaza Kihada Hall, Uji Campus, Kyoto University (Primary: On-site, Secondary: Online) |
Field-Plate Length Dependence of 2.4-GHz Rectification Characteristics of Gated-Anode GaN HEMT Based Diode Gen Taguchi, Naoya Kishimoto, Youichi Tsuchiya, Debaleen Biswasa, Ma Qiang (Nagoya Inst. of Tech.), Yuji Ando, Hidemasa Takahashi (Nagoya Univ), Kenji Itoh, Naoki Sakai (Kanazawa Inst. of Tech), Akio Wakejima (Nagoya Inst. of Tech.) |
We demonstrate field-plate (FP) length dependence of 2.4-GHz rectification characteristics of gated-anode GaN HEMT based... [more] | |
| WPT, EE (Joint) |
2020-10-07 13:40 |
Online | Online | Electrical Characteristics of Gated-Anode Diode for Rectenna Using Normally-Off GaN HEMT Hidemasa Takahashi, Yuji Ando (Nagoya Univ.), Yoichi Tsuchiya, Akio Wakejima (NITECH), Hiroaki Hayashi, Eiji Yagyu (Mitsubishi Electric), Koichi Kikkawa, Naoki Sakai, Kenji Itoh (Kanazawa Institute of Tech), Jun Suda (Nagoya Univ.)  WPT2020-19 |
As a device for wireless power transmission, we are developing a new rectenna that uses a gated anode diode (GAD) that s... [more] | WPT2020-19 pp.1-5 |
| WPT, EE (Joint) |
2018-10-03 09:55 |
Kyoto | Kyoto Univ. Uji Campus | GaN diode rectifier with recessed gate FET for wireless power transfer Jumpei Sumino, Yuya Ikedo (NITech), Yamato Osada, Ryuichiro Kamimura (ULVAC), Akio Wakejima (NITech) WPT2018-30 |
(To be available after the conference date) [more] | WPT2018-30 pp.5-9 |
| ED, LQE, CPM | 2012-11-29 14:20 |
Osaka | Osaka City University | Evaluation of transient current of GaN HEMTs on Si under light Takuya Joka, Akio Wakejima, Takashi Egawa (NIT) ED2012-72 CPM2012-129 LQE2012-100 |
We evaluated a transient response of a drain current (Id(t)) of an AlGaN/GaN HEMT on a Si substrate under light irradiat... [more] | ED2012-72 CPM2012-129 LQE2012-100 pp.29-32 |
| ED, MW | 2012-01-12 13:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Step-stress Reliability Studies on AlGaN/GaN HEMTs on Silicon with Buffer Thickness Dependence Amalraj Frank Wilson, Akio Wakejima, Takashi Egawa (Nagoya Inst. of Tech.) ED2011-134 MW2011-157 |
[more] | ED2011-134 MW2011-157 pp.87-90 |
| LQE, ED, CPM | 2011-11-17 17:10 |
Kyoto | Katsura Hall，Kyoto Univ. | Ultraviolet Photodetectors using Transparent Gate AlGaN/GaN-HEMT Tomotaka Narita, Akio Wakejima, Takashi Egawa (NIT) ED2011-86 CPM2011-135 LQE2011-109 |
Transparent gate AlGaN/GaN HEMT(High Electron Mobility Transistor) on a Si substrate was fabricated. We estimated as cha... [more] | ED2011-86 CPM2011-135 LQE2011-109 pp.67-70 |
| ED, MW | 2008-01-16 15:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | CW ２０-W AlGaN/GaN FET power amplifier for quasi-millimeter wave applications Yasuhiro Murase, Akio Wakejima, Takashi Inoue, Katsumi Yamanoguchi, Masahiro Tanomura, Tatsuo Nakayama, Yasuhiro Okamoto, Kazuki Ota, Yuji Ando, Naotaka Kuroda, Kohji Matsunaga, Hironobu Miyamoto (FED) ED2007-212 MW2007-143 |
This paper describes an AlGaN/GaN FET power amplifier module delivering a continuous wave (CW) output power of more than... [more] | ED2007-212 MW2007-143 pp.33-38 |
| MW, ED | 2005-01-18 16:15 |
Tokyo | - Akio Wakejima (NEC), -, -, Masahiro Funabashi (NTSpace), Kohji Matsunaga (NEC) |
[more] | ED2004-225 MW2004-232 pp.77-82 |
|
[Return to Top Page]