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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2009-06-19 12:40 |
Tokyo |
An401・402 Inst. Indus. Sci., The Univ. of Tokyo |
Thermal Stability of Ge MOS Devices
-- Influence of Ge monoxide [GeO(II)] on Ge oxygen [GeO(g)] desorption -- Yoshiki Kamata (MIRAI-TOSHIBA), Akira Takashima (TOSHIBA Corp), Tsutomu Tezuka (MIRAI-TOSHIBA) SDM2009-31 |
GeO(g) desorption temperature decreases with the increase in the ratio of GeO(II) in Ge oxide and is independent of the ... [more] |
SDM2009-31 pp.27-31 |
SDM |
2007-06-08 10:55 |
Hiroshima |
Hiroshima Univ. ( Faculty Club) |
Improvement of the electrical properties of La aluminates/Si (100) interface by insertion of one monolayer epitaxial SrSi2 Akira Takashima, Yukie Nishikawa, Tatsuo Schimizu, Masamichi Suzuki, Daisuke Matsushita, Masahiko Yoshiki, Mitsuhiro Tomita, Takeshi Yamaguchi, Masato Koyama, Noburu Fukushima (Toshiba) SDM2007-43 |
By controlling atomic arrangement of La aluminates (LAO, EOT scalable below 0.5 nm)/Si interface with a newly developed ... [more] |
SDM2007-43 pp.65-70 |
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