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 Results 1 - 20 of 26  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2021-06-22
Online Online [Invited Lecture] For understanding ferroelectric HfO2 toward its device applications
Akira Toriumi SDM2021-26
 [more] SDM2021-26
SDM 2019-06-21
Aichi Nagoya Univ. VBL3F New Operation Mode of VO2-Channel Mott Transistors for Ultra-Sharp ON/OFF Switching
Takeaki Yajima (Univ. of Tokyo), Yusuke Samata, Tomonori Nishimura, Akira Toriumi (JST) SDM2019-32
The characteristics of the VO2-channel Mott transistor is systematically studied. The transfer characteristics shows a c... [more] SDM2019-32
SDM 2019-01-29
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Multidomain Dynamics of Ferroelectric Polarization in Negative Capacitance State and its Impacts on Performances of Field-Effect Transistors
Hiroyuki Ota, Tsutomu Ikegami, Koichi Fukuda, Junichi HattoriI, Hidehiro Asai, Kazuhiko Endo, Shinji Migita (AIST), Akira Toriumi (The Univ. of Tokyo) SDM2018-81
In this paper, we clarified the multidomain dynamics of ferroelectric polarization in the Negative Capacitance Field-Eff... [more] SDM2018-81
SDM 2019-01-29
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Direct relationship between sub-60 mV/dec subthreshold swing and internal potential instability in MOSFET externally connected to ferroelectric capacitor
Li Xiuyan, Akira Toriumi (Univ. of Tokyo) SDM2018-83
 [more] SDM2018-83
SDM 2018-06-25
Aichi Nagoya Univ. VBL3F Concern of Ferroelectric HfO2 Films Brought by Large Coercive Field
Shinji Migita, Hiroyuki Ota (AIST), Akira Toriumi (Univ. Tokyo) SDM2018-25
Ferroelectric HfO2-based thin films are attractive memory materials for application in LSI. These ferroelectrics have la... [more] SDM2018-25
SDM 2018-01-30
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Perspective of Negative Capacitance FinFETs Investigated by Transient TCAD Simulation
Hiroyuki Ota, Shinji Mgita, Tsutomu Ikegami, Junichi Hattori, Hidehiro Asai, Koichi Fukuda (AIST), Akira Toriumi (The Univ. of Tokyo) SDM2017-91
 [more] SDM2017-91
SDM 2018-01-30
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Sub-nm EOT Ferroelectric HfO2 on p+Ge with Highly Reliable Field Cycling Properties
Xuan Tian, Lun Xu, Shigehisa Shibayama, Tomonori Nishimura, Takeaki Yajima (Univ. of Tokyo), Shinji Migita (AIST), Akira Toriumi (Univ. of Tokyo) SDM2017-96
5-nm-thick ferroelectric Y-doped HfO2 was intensively studied. The thickness dependence of ferroelectric properties indi... [more] SDM2017-96
SDM, ICD, ITE-IST [detail] 2017-08-02
Hokkaido Hokkaido-Univ. Multimedia Education Bldg. [Invited Talk] Capacitor-less neuron circuits using metal-insulator transition devices
Takeaki Yajima, Tomonori Nishimura, Akira Toriumi (Univ. of Tokyo) SDM2017-44 ICD2017-32
The metal-insulator transition of VO2 is exploited in neuromorphic circuits, resulting in a capacitor-less neuron circui... [more] SDM2017-44 ICD2017-32
SDM 2017-01-30
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Fully Coupled 3-D Device Simulation of Negative Capacitance FinFETs for Sub 10 nm Integration
Hiroyuki Ota, Tsutomu Ikegami, Junichi Hattori, Koichi Fukuda, Shinji Migita (AIST), Akira Toriumi (The Univ. of Tokyo) SDM2016-133
Subthreshold operation of negative capacitance FinFETs (NC-FinFETs) at sub 10 nm gate length are analyzed with a newly d... [more] SDM2016-133
SDM 2017-01-30
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Novel Functional Passive Element for Future Analogue Signal Processing -- Fabrication and Application of the VO2 Volatile Switch --
Takeaki Yajima, Tomonori Nishimura, Akira Toriumi (Univ. of Tokyo) SDM2016-138
Electronic devices for internet of things (IoT) need to reconcile high functionality with low cost and simplicity. This ... [more] SDM2016-138
SDM 2016-11-10
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Free carrier density dependent band gap and phonon frequency in germanium
Shoichi Kabuyanagi, Akira Toriumi (The Univ. of Tokyo) SDM2016-82
 [more] SDM2016-82
SDM 2016-06-29
Tokyo Campus Innovation Center Tokyo [Invited Lecture] Design of SOI-FETs for Steep Slope Switching using Negative Capacitance in Ferroelectric Gate Insulators
Hiroyuki Ota, Shinji Migita, Junichi Hattori, Koichi Fukuda (AIST), Akira Toriumi (The Univ. of Tokyo) SDM2016-34
This paper discusses a design of fully depleted silicon-on-insulator field-effect transistors with ferroelectric gate in... [more] SDM2016-34
SDM 2015-01-27
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Analytical formulation of interfacial SiO2scavenging in HfO2/SiO2/Si stacks
Xiuyan Li, Takeaki Yajima, Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi (Univ. of Tokyo) SDM2014-135
 [more] SDM2014-135
SDM 2015-01-27
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Dramatic Effects of Hydrogen-induced Out-diffusion of Oxygen from Ge Surface on Junction Leakage as well as Electron Mobility in n-channel Ge MOSFETs
ChoongHyun Lee, Tomonori Nishimura, Cimang Lu, Shoichi Kabuyanagi, Akira Toriumi (Univ. of Tokyo) SDM2014-136
 [more] SDM2014-136
SDM 2014-11-07
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Interface Engineering for High Mobility Ge MOSFETs: Surface Orientation and Scattering Mechanism
ChoongHyun Lee, Tomonori Nishimura, Akira Toriumi (Univ. of Tokyo) SDM2014-107
 [more] SDM2014-107
SDM 2014-06-19
Aichi VBL, Nagoya Univ. [Invited Lecture] Ultra-sharp metal-to-insulator transition in a single crystal VO2 thin film by controlling the local stress of transition
Takeaki Yajima, Yuma Ninomiya, Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi (Univ. of Tokyo) SDM2014-55
 [more] SDM2014-55
SDM 2014-01-29
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Carrier response in band gap and multiband transport in bilayer grapheme under the ultra-high displacement
Kosuke Nagashio, K Kanayama, Tomonori Nishimura, Akira Toriumi (Univ. of Tokyo) SDM2013-135
 [more] SDM2013-135
SDM 2014-01-29
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Reconsideration of Electron Mobility in Ge n-MOSFETs from Ge Substrate Side
ChoongHyun Lee, Tomonori Nishimura, T Tabata, Cimang Lu, W F Zhang, Kosuke Nagashio, Akira Toriumi (Univ. of Tokyo) SDM2013-136
We clarified wafer-related origins for electron mobility degradation in Ge n-MOSFETs. High-Ns electron mobility was dram... [more] SDM2013-136
SDM 2010-06-22
Tokyo An401・402 Inst. Indus. Sci., The Univ. of Tokyo Control of GeO2 Properties and Improvement of Ge/GeO2 Interface Characteristics Based on the Understanding of Geo2/Ge Interface Reaction
Koji Kita (Univ. of Tokyo/JST-CREST), Sheng Kai Wang, ChoongHyun Lee, Mahoro Yoshida (Univ. of Tokyo), Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi (Univ. of Tokyo/JST-CREST) SDM2010-43
 [more] SDM2010-43
SDM 2009-06-19
Tokyo An401・402 Inst. Indus. Sci., The Univ. of Tokyo Fermi Level Pinning at Metal/Germanium Interface and its Controllability
Tomonori Nishimura, Kosuke Nagashio, Koji Kita, Akira Toriumi (The Univ. of Tokyo//JST-CREST) SDM2009-32
The purpose is to understand metal/germanium (Ge) junction characteristics to control Schottky barrier height at metal/G... [more] SDM2009-32
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