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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2018-06-25 11:40 |
Aichi |
Nagoya Univ. VBL3F |
Control of SiO2/GaN Interface for High-performance GaN MOSFET Tauji Hosoi, Takahiro Yamada, Mikito Nozaki (Osaka Univ.), Tokio Takahashi, Hisashi Yamada, Mitsuaki Shimizu (AIST), Akitaka Yoshigoe (JAEA), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2018-18 |
A high-quality gate insulator together with low interface states is indispensable for GaN-based power MOSFETs. We have r... [more] |
SDM2018-18 pp.11-14 |
SDM |
2013-06-18 10:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Germanide formation in metal/high-k/Ge gate stacks and its impact on electrical properties Takuji Hosoi, Iori Hideshima, Yuya Minoura, Ryohei Tanaka (Osaka Univ.), Akitaka Yoshigoe, Yuden Teraoka (JAEA), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2013-47 |
[more] |
SDM2013-47 pp.19-23 |
SDM, ED (Workshop) |
2012-06-27 11:30 |
Okinawa |
Okinawa Seinen-kaikan |
[Invited Talk]
Gate Stack Technologies for Silicon Carbide Power MOS Devices Takuji Hosoi, Takashi Kirino, Yusuke Uenishi, Daisuke Ikeguchi, Atthawut Chanthaphan (Osaka Univ.), Akitaka Yoshigoe, Yuden Teraoka (JAEA), Shuhei Mitani, Yuki Nakano, Takashi Nakamura (ROHM), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) |
Silicon carbide (SiC) is a promising material for high-power electronic devices. Although SiO$_2$ dielectric film can be... [more] |
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SDM |
2011-07-04 10:40 |
Aichi |
VBL, Nagoya Univ. |
Characterization of initial oxidation process on high-index silicon surfaces by real-time photoemission spectroscopy Shinya Ohno, Kei Inoue, Masahiro Morimoto, Sadanori Arae, Hiroaki Toyoshima (Yokohama Nat'l Univ.), Akitaka Yoshigoe, Yuden Teraoka (JAEA), Shoichi Ogata (Yokohama Nat'l Univ.), Tetsuji Yasuda (AIST), Masatoshi Tanaka (Yokohama Nat'l Univ.) SDM2011-54 |
The initial oxidation on high-index silicon surfaces with (113) and (120) orientations has been investigated by real-tim... [more] |
SDM2011-54 pp.23-27 |
SDM |
2008-06-10 12:45 |
Tokyo |
An401・402, Inst. Indus. Sci., The Univ. of Tokyo |
XPS real-time monitoring on the development of Si suboxides during formation of thermal oxide on Si(110) surface Yoshihisa Yamamoto, Hideaki Togashi, Atsushi Konno, Mitsutaka Matsumoto, Atsushi Kato, Eiji Saito, Maki Suemitsu (Tohoku Univ.), Yuden Teraoka, Akitaka Yoshigoe (JAEA) SDM2008-53 |
The growth process of thermal oxides on Si(110) surface and its interfacial bonding structures have been investigated by... [more] |
SDM2008-53 pp.65-70 |
SDM |
2006-06-22 09:00 |
Hiroshima |
Faculty Club, Hiroshima Univ. |
Comparison between Si(110) and Si(100) Surfaces in their Kinetics of Initial Oxidation
-- From Real-time XPS Measurements -- Maki Suemitsu, Atsushi Kato, Hideaki Togashi, Atsushi Konno (Tohoku Univ.), Yuden Teraoka, Akitaka Yoshigoe (JAEA), Yuzuru Narita (KIT) |
By using real-time photoemission spectroscopy, kinetics of initial oxidation of Si(110)-16´2 surface has been investigat... [more] |
SDM2006-52 pp.61-63 |
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