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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 11 of 11  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED 2016-07-23
15:05
Tokyo Tokyo Metropolitan Univ. Minami-Osawa Campus, International House Effects of post-deposition anneal on SiO2 layer on Ga2O3
Keita Konishi, Takafumi Kamimura, Man Hoi Wong (NICT), Kohei Sasaki, Akito Kuramata, Shigenobu Yamakoshi (Tamura Corp.), Masataka Higashiwaki (NICT) ED2016-29
Ga2O3 is an attractive new oxide semiconductor for next-generation power devices due to its extremely large bandgap of 4... [more] ED2016-29
pp.11-15
ED 2016-01-20
11:20
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] State-of-the-art technology of gallium oxide power devices
Masataka Higashiwaki, Man Hoi Wong, Keita Konishi (NICT), Kohei Sasaki (Tamura/NICT), Ken Goto (Tamura/TAT), Kazushiro Nomura, Quang Tu Thieu, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Bo Monemar, Akinori Koukitu (TAT), Akito Kuramata, Takekazu Masui, Shigenobu Yamakoshi (Tamura) ED2015-114
Gallium oxide (Ga{$_{2}$}O{$_{3}$}) is one of oxide semiconductors and has excellent material properties for power devic... [more] ED2015-114
pp.13-18
ED 2015-07-24
15:10
Ishikawa IT Business Plaza Musashi 5F Band alignment at SiO2/β-Ga2O3 interface determined by X-ray photoelectron spectroscopy
Keita Konishi, Takafumi Kamimura, Man Hoi Wong (NICT), Kohei Sasaki, Akito Kuramata, Shigenobu Yamakoshi (MURA Corp.), Masataka Higashiwaki (NICT) ED2015-40
 [more] ED2015-40
pp.21-24
SDM 2015-06-19
10:10
Aichi VBL, Nagoya Univ. [Invited Lecture] Al2O3/Ga2O3 interface structure and its surface orientation dependence
Takafumi Kamimura, Daivasigamani Krishnamurthy (NICT), Akito Kuramata, Shigenobu Yamakoshi (Tamura Corp.), Masataka Higashiwaki (NICT) SDM2015-40
The interface state densities (Dit) of Al2O3/n-Ga2O3 (010) and Al2O3/n-Ga2O3 ("2" ̅01) were evaluated with Hi-Lo C... [more] SDM2015-40
pp.11-16
ED 2014-08-01
15:50
Tokyo Kikai-Shinko-Kaikan Bldg. B3-1 Band offset at Al2O3/β-Ga2O3 Heterojunctions
Takafumi Kamimura (NICT), Kohei Sasaki (Tamura Corp.), Man Hoi Wong, Daivasigamani Krishnamurthy (NICT), Akito Kuramata (Tamura Corp.), Takekazu Masui (Koha Co., Ltd.), Shigenobu Yamakoshi (Tamura Corp.), Masataka Higashiwaki (NICT) ED2014-60
The band alignment of Al2O3/n-Ga2O3 (010) was investigated by x-ray photoelectron spectroscopy (XPS). With a band gap of... [more] ED2014-60
pp.41-46
ED, MW 2014-01-16
11:45
Tokyo Kikai-Shinko-Kaikan Bldg. Depletion-mode gallium oxide metal-oxide-semiconductor field-effect transistors fabricated by using Si-ion implantation
Masataka Higashiwaki (NICT), Kohei Sasaki (Tamura/NICT), Man Hoi Wong, Takafumi Kamimura, Daivasigamani Krishnamurthy (NICT), Akito Kuramata (Tamura), Takekazu Masui (Koha), Shigenobu Yamakoshi (Tamura) ED2013-116 MW2013-181
Depletion-mode gallium oxide (Ga2O3) MOSFETs were fabricated on single-crystal beta-Ga2O3 (010) substrates. We applied S... [more] ED2013-116 MW2013-181
pp.35-39
ED 2013-08-08
17:10
Toyama University of Toyama Characterization of Al2O3/ n-Ga2O3 MOS diodes
Takafumi Kamimura, Man Hoi Wong (NICT), Kohei Sasaki (Tamura Corp.), Daivasigamani Krishnamurthy (NICT), Akito Kuramata (Tamura Corp.), Takekazu Masui (Koha Co., Ltd.), Shigenobu Yamakoshi (Tamura Corp.), Masataka Higashiwaki (NICT) ED2013-43
 [more] ED2013-43
pp.29-32
ED, LQE, CPM 2012-11-29
13:55
Osaka Osaka City University Pt/β-Ga2O3 Schottky Barrier Diodes Using Single-Crystal β-Ga2O3 Substrates
Kohei Sasaki (Tamura Corp./NICT), Masataka Higashiwaki (NICT/JST), Akito Kuramata (Tamura Corp.), Takekazu Masui (Koha Co.), Shigenobu Yamakoshi (Tamura Corp.) ED2012-71 CPM2012-128 LQE2012-99
We fabricated gallium oxide ($Ga_2O_3$) Schottky barrier diodes using $\beta-Ga_2O_3$ (010) single crystal substrates pr... [more] ED2012-71 CPM2012-128 LQE2012-99
pp.25-28
SDM, ED
(Workshop)
2012-06-29
09:15
Okinawa Okinawa Seinen-kaikan [Invited Talk] New widegap semiconductor Ga2O3 MESFETs and Schottky barrier diodes
Masataka Higashiwaki (NICT/JST), Kohei Sasaki (Tamura Corp./NICT), Akito Kuramata (Tamura Corp.), Takekazu Masui (Koha Co., Ltd.), Shigenobu Yamakoshi (Tamura Corp.)
{$\beta$}-gallium oxide (Ga{$_{2$}}O{$_{3}$}) has excellent material properties for power device applications represente... [more]
LQE 2004-12-03
15:15
Tokyo Kikai-Shinko-Kaikan Bldg. 1.3 μm InAs/GaAs quantum dot lasers with AlGaAs cladding layer grown at low temperature by MOCVD
Jun Tatebayashi, Nobuaki Hatori, Mitsuru Ishida, Hiroji Ebe (Univ. of Tokyo), Hisao Sudou, Akito Kuramata (Fujitsu Lab.), Mitsuru Sugawara, Yasuhiko Arakawa (Univ. of Tokyo)
Quantum-dot lasers are recently of practical concern since quantum dots can extend the lasing wavelengths of GaAs-based ... [more] LQE2004-126
pp.45-50
LQE, OCS, OPE 2004-11-04
17:30
Fukuoka Kyushu Institute of Technology High-speed and Low-driving-voltage InP-based Mach-Zehnder Modulators with Capacitively Loaded Traveling-wave Electrodes
Suguru Akiyama, Hiroaki Itoh, Tatsuya Takeuchi, Shinichi Hirose, Takayuki Watanabe, Shigeaki Sekiguchi, Akito Kuramata, Tsuyoshi Yamamoto (Fujitsu Lab.)
Recently, high-speed and low-driving voltage operation has been investigated for InP-based Mach-Zehnder modulators, by u... [more] OCS2004-92 OPE2004-157 LQE2004-101
pp.51-56
 Results 1 - 11 of 11  /   
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