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All Technical Committee Conferences  (Searched in: Recent 10 Years)

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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 20  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, CPM, LQE 2024-11-28
16:05
Aichi Nagoya Institute of Technology (Aichi) A study on the carrier dynamics in InGaN quantum-well systems with different well numbers
Itsuki Shimbo, Hiroki Tosa, Shoki Jinno, Keito Mori-Tamamura, Atsushi A. Yamaguchi (KIT), Kazunori Iwamitsu, Shigetaka Tomiya (NAIST) ED2024-25 CPM2024-69 LQE2024-56
In an InGaN quantum-well (QW), the full understanding of carrier dynamics is difficult due to its complex physical facto... [more] ED2024-25 CPM2024-69 LQE2024-56
pp.21-24
ED, CPM, LQE 2024-11-28
16:30
Aichi Nagoya Institute of Technology (Aichi) A study on the carrier dynamics in InGaN quantum-well systems with different alloy compositions
Yamagata Ririka, Itsuki Shimbo, Keito Mori-Tamamura, Atsushi A. Yamaguchi (kanazawa Inst. Tech.), Kazunori Iwamitsu, Shigetaka Tomiya (NAIST) ED2024-26 CPM2024-70 LQE2024-57
In this study, we have performed optical measurements such as time-resolved photoluminescence (PL) for a series of InGaN... [more] ED2024-26 CPM2024-70 LQE2024-57
pp.25-28
ED, CPM, LQE 2024-11-28
16:55
Aichi Nagoya Institute of Technology (Aichi) Carrier diffusion processes in InGaN quantum wells measured by time-resolved PL measurements
Osuke Ito, Atsushi A. Yamaguchi (Kanazawa Inst. Tech.), Maiko Ito, Rintaro Koda, Tatsushi Hamaguchi (Sony Semiconductor Solutions Corp.) ED2024-27 CPM2024-71 LQE2024-58
Carrier diffusion processes in InGaN quantum wells (QWs) will probably be largely influenced by potential fluctuation in... [more] ED2024-27 CPM2024-71 LQE2024-58
pp.29-32
LQE, ED, CPM 2023-12-01
09:30
Shizuoka (Shizuoka) Improvement of S/N ratio in simultaneous photoacoustic and photoluminescence measurements in InGaN quantum wells by utilizing Helmholtz resonance and increasing the air pressure inside the photoacoustic cell
Hiroki Tosa, Keito Mori-Tamamura, Atsushi A. Yamaguchi (Kanazawa Inst. Tech.) ED2023-24 CPM2023-66 LQE2023-64
 [more] ED2023-24 CPM2023-66 LQE2023-64
pp.48-51
LQE, ED, CPM 2023-12-01
09:55
Shizuoka (Shizuoka) Simultaneous microscopic PA/PL line-scan measurements in InGaN-quantum wells on a stripe-core GaN Substrate
Syoki Jinno, Atsushi A. Yamaguchi, Keito Mori-Tamamura (Kanazawa Inst. of Tech.), Susumu Kusanagi, Yuya Kanitani, Shigetaka Tomiya, Yoshihiro Kudo (Sony Semiconductor Solutions Corp.) ED2023-25 CPM2023-67 LQE2023-65
Accurate measurement of internal quantum efficiency (IQE) is necessary for a comprehensive understanding of the electron... [more] ED2023-25 CPM2023-67 LQE2023-65
pp.52-55
LQE, ED, CPM 2023-12-01
10:20
Shizuoka (Shizuoka) Polarization control of surface emission from c-plane InGaN quantum wells and determination of deformation potential in InGaN alloy materials
Keito Mori-Tamamura, Atsushi A. Yamaguchi (Kanazawa Inst. Tech), Tomohiro Makino, Maho Ohara, Tatsushi Hamaguchi, Rintaro Koda (Sony Semiconductor Solutions) ED2023-26 CPM2023-68 LQE2023-66
InGaN-quantum-well (QW) based vertical-cavity surface-emitting lasers (VCSELs), which are usually fabricated on the c-pl... [more] ED2023-26 CPM2023-68 LQE2023-66
pp.56-59
CPM, ED, LQE 2022-11-25
10:35
Aichi Winc Aichi (Aichi Industry & Labor Center) (Aichi, Online)
(Primary: On-site, Secondary: Online)
[Encouragement Talk] Experimental studies on the recombination mechanism in III-nitride semiconductors by simultaneous measurements of radiative and non-radiative recombinations
Keito Mori-Tamamura, Yuya Morimoto, Atsushi A. Yamaguchi (Kanazawa Inst. of Tech.), Susumu Kusanagi, Yuya Kanitani, Yoshihiro Kudo, Shigetaka Tomiya (Sony) ED2022-40 CPM2022-65 LQE2022-73
The carrier dynamics in active layers of III-nitride-based optical devices, has not been fully understood, yet. We belie... [more] ED2022-40 CPM2022-65 LQE2022-73
pp.73-76
ED, CPM, LQE 2021-11-25
13:30
Online Online (Online) Indium Composition Dependence of Internal Quantum Efficiency in InGaN Quantum-Wells Measured by Simultaneous Microscopic Photoacoustic and Photoluminescence Spectroscopy
Keito Mori, Yuchi Takahashi, Yuya Morimoto, Atsushi A. Yamaguchi (Kanazawa Inst. of Tech.) ED2021-20 CPM2021-54 LQE2021-32
Accurate estimation of internal quantum efficiency (IQE) is necessary for comprehensive understanding of the carrier dyn... [more] ED2021-20 CPM2021-54 LQE2021-32
pp.29-32
ED, CPM, LQE 2021-11-25
13:55
Online Online (Online) Waveguide loss measurements in III-nitride laser structures
Kenta Ogasawara (KIT), Shigeta Sakai, Tadashi Okumura, Koichi Naniwae (Ushio Inc), Atsushi A. Yamaguchi (KIT) ED2021-21 CPM2021-55 LQE2021-33
InGaN is a semiconductor alloy material made of a mix of InN and GaN. InGaN can emit entire visible light by changing th... [more] ED2021-21 CPM2021-55 LQE2021-33
pp.33-36
ED, CPM, LQE 2021-11-25
14:35
Online Online (Online) Photoluminescence study of high-purity GaN homoepitaxial layers grown by hydride vapor phase epitaxy
Hiroto Imashiro, Ryo Yamahida, Hironao Kanamori, Ryuichi Watanabe (KIT), Takeshi Kimura, Taichiro Konno, Hajime Fujikura (SCIOCS), Atsushi A. Yamaguchi (KIT) ED2021-22 CPM2021-56 LQE2021-34
The fundamental material properties of GaN and its related materials have not been fully understood. One of the reasons ... [more] ED2021-22 CPM2021-56 LQE2021-34
pp.37-40
LQE, CPM, ED 2020-11-26
10:05
Online Online (Online) Internal and External Quantum Efficiency in InGaN Quantum Wells Estimated by Simultaneous Photoacoustic and Photoluminescence Method and Integrating-Sphere Method
Keito Mori, Yuchi Takahashi, Shigeta Sakai, Yuya Morimoto, Atsushi A. Yamaguchi (KIT), Susumu Kusanagi, Yuya Kanitani, Yoshihiro Kudo, Shigetaka Tomiya (Sony) ED2020-1 CPM2020-22 LQE2020-52
In our previous reports, we proposed photoacoustic (PA) and photoluminescence (PL) simultaneous measurements as a method... [more] ED2020-1 CPM2020-22 LQE2020-52
pp.1-4
CPM, LQE, ED 2019-11-22
14:00
Shizuoka Shizuoka Univ. (Hamamatsu) (Shizuoka) Theoretical and Experimental Studies on Estimation Methods of Mobility Edge in InGaN Quantum Wells
Takashi Fujita, Shigeta Sakai, Yuma Ikeda, Atsushi A. Yamaguchi (Kanazawa Inst. Tech.), Susumu Kusanagi, Yuya Kanitani, Yoshihiro Kudo, Shigetaka Tomiya (Sony) ED2019-56 CPM2019-75 LQE2019-99
InGaN is a mixed crystal of InN and GaN. Entire visible light range can be covered by changing their composition. Since ... [more] ED2019-56 CPM2019-75 LQE2019-99
pp.97-100
CPM, LQE, ED 2019-11-22
14:20
Shizuoka Shizuoka Univ. (Hamamatsu) (Shizuoka) Estimation of Internal Quantum Efficiency in Various InGaN Single Quantum Wells with Different Qualities by Simultaneous Photoacoustic and Photoluminescence Measurements
Keito Mori, Yuchi Takahashi, Yuya Morimoto, Atsushi A. Yamaguchi (KIT), Susumu Kusanagi, Yuya Kanitani, Yoshihiro Kudo, Shigetaka Tomiya (SONY) ED2019-57 CPM2019-76 LQE2019-100
In order to comprehensively understand the optical properties of nitride semiconductors, we believe accurate measurement... [more] ED2019-57 CPM2019-76 LQE2019-100
pp.101-106
ED, LQE, CPM 2018-11-30
13:05
Aichi Nagoya Inst. tech. (Aichi) Theoretical and Experimental Studies on Potential Fluctuation in InGaN Quantum-Well Structures
Takashi Fujita, Shigeta Sakai, Yuma Ikeda, Atsushi A. Yamaguchi (Kanazawa Inst. Tech.), Yuya Kanitani, Shigetaka Tomiya (Sony) ED2018-48 CPM2018-82 LQE2018-102
The bandgap energy of InGaN alloy materials can be controlled by changing their alloy composition. Since the composition... [more] ED2018-48 CPM2018-82 LQE2018-102
pp.75-78
LQE, CPM, ED 2017-11-30
14:00
Aichi Nagoya Inst. tech. (Aichi) Model Analysis of I-V and Photoluminescence Characteristics under Photo-Excitation in InGaN LEDs
Yusuke Ota, Shigeta Sakai, Atsushi A. Yamaguchi (Kanazawa Inst. of Tech.) ED2017-50 CPM2017-93 LQE2017-63
Current-voltage characteristics under photo-excitation in nitride-based LEDs have been measured to investigate the elect... [more] ED2017-50 CPM2017-93 LQE2017-63
pp.7-10
LQE, CPM, ED 2017-11-30
14:25
Aichi Nagoya Inst. tech. (Aichi) Detailed analysis of S-shaped temperature dependence of photoluminescence peak energy in InGaN quantum wells
Yuma Ikeda, Shigeta Sakai, Itsuki Oshima, Atsushi A. Yamaguchi (Kanazawa Inst. of Tehc.), Yuya Kanitani, Shigetaka Tomiya (Sony) ED2017-51 CPM2017-94 LQE2017-64
Analysis of S-shaped temperature dependence of PL peak energy is widely used to evaluate the degree of compositional flu... [more] ED2017-51 CPM2017-94 LQE2017-64
pp.11-14
LQE 2016-12-16
11:40
Tokyo Kikai-Shinko-Kaikan Bldg. (Tokyo) [Memorial Lecture] Determination of internal quantum efficiency and recombination lifetime by simultaneous photo-acoustic and photoluminescence measurements in GaN
Kohei Kawakami, Takashi Nakano, Atsushi A. Yamaguchi (Kanazawa Inst. Tech.) LQE2016-99
Internal quantum efficiency (IQE) is usually estimated from temperature dependence of photoluminescence (PL) intensity b... [more] LQE2016-99
pp.15-20
CPM, LQE, ED 2016-12-13
08:40
Kyoto Kyoto University (Kyoto) Enhancement of Optical Gain by Controlling Waveguide Modes in Semipolar InGaN Quantum Well Laser Diodes
Keigo Matsuura, Shigeta Sakai, Atsushi A. Yamaguchi (KIT) ED2016-67 CPM2016-100 LQE2016-83
In order to realize low-cost high-performance green semiconductor laser diodes (LDs), we proposed semipolar InGaN quantu... [more] ED2016-67 CPM2016-100 LQE2016-83
pp.51-54
LQE 2015-12-18
09:50
Tokyo (Tokyo, Tokyo) Electromagnetic-field analysis simulation for the improvement of light extraction efficiency in III-nitride LEDs
Satoshi Ozaki, Atsushi A. Yamaguchi (Kanazawa Inst. Tech.), Hiroki Goto, Akira Usui (Furukawa Co., Ltd.) LQE2015-123
The efficiency droop phenomenon is a big problem for high-brightness white LEDs. It has been pointed out that the proble... [more] LQE2015-123
pp.1-4
ED, LQE, CPM 2015-11-26
15:55
Osaka Osaka City University Media Center (Osaka) Determination of internal quantum efficiency in GaN by simultaneous measurements of photoluminescence and photo-acoustic signals
Takashi Nakano, Kouhei Kawakami, Atsushi A. Yamaguchi (KIT) ED2015-78 CPM2015-113 LQE2015-110
Internal quantum efficiency (IQE) is usually estimated from temperature dependence of photoluminescence (PL) intensity b... [more] ED2015-78 CPM2015-113 LQE2015-110
pp.53-58
 Results 1 - 20 of 20  /   
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