Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED, CPM, LQE |
2024-11-28 16:05 |
Aichi |
Nagoya Institute of Technology (Aichi) |
A study on the carrier dynamics in InGaN quantum-well systems with different well numbers Itsuki Shimbo, Hiroki Tosa, Shoki Jinno, Keito Mori-Tamamura, Atsushi A. Yamaguchi (KIT), Kazunori Iwamitsu, Shigetaka Tomiya (NAIST) ED2024-25 CPM2024-69 LQE2024-56 |
In an InGaN quantum-well (QW), the full understanding of carrier dynamics is difficult due to its complex physical facto... [more] |
ED2024-25 CPM2024-69 LQE2024-56 pp.21-24 |
ED, CPM, LQE |
2024-11-28 16:30 |
Aichi |
Nagoya Institute of Technology (Aichi) |
A study on the carrier dynamics in InGaN quantum-well systems with different alloy compositions Yamagata Ririka, Itsuki Shimbo, Keito Mori-Tamamura, Atsushi A. Yamaguchi (kanazawa Inst. Tech.), Kazunori Iwamitsu, Shigetaka Tomiya (NAIST) ED2024-26 CPM2024-70 LQE2024-57 |
In this study, we have performed optical measurements such as time-resolved photoluminescence (PL) for a series of InGaN... [more] |
ED2024-26 CPM2024-70 LQE2024-57 pp.25-28 |
ED, CPM, LQE |
2024-11-28 16:55 |
Aichi |
Nagoya Institute of Technology (Aichi) |
Carrier diffusion processes in InGaN quantum wells measured by time-resolved PL measurements Osuke Ito, Atsushi A. Yamaguchi (Kanazawa Inst. Tech.), Maiko Ito, Rintaro Koda, Tatsushi Hamaguchi (Sony Semiconductor Solutions Corp.) ED2024-27 CPM2024-71 LQE2024-58 |
Carrier diffusion processes in InGaN quantum wells (QWs) will probably be largely influenced by potential fluctuation in... [more] |
ED2024-27 CPM2024-71 LQE2024-58 pp.29-32 |
LQE, ED, CPM |
2023-12-01 09:30 |
Shizuoka |
(Shizuoka) |
Improvement of S/N ratio in simultaneous photoacoustic and photoluminescence measurements in InGaN quantum wells by utilizing Helmholtz resonance and increasing the air pressure inside the photoacoustic cell Hiroki Tosa, Keito Mori-Tamamura, Atsushi A. Yamaguchi (Kanazawa Inst. Tech.) ED2023-24 CPM2023-66 LQE2023-64 |
[more] |
ED2023-24 CPM2023-66 LQE2023-64 pp.48-51 |
LQE, ED, CPM |
2023-12-01 09:55 |
Shizuoka |
(Shizuoka) |
Simultaneous microscopic PA/PL line-scan measurements in InGaN-quantum wells on a stripe-core GaN Substrate Syoki Jinno, Atsushi A. Yamaguchi, Keito Mori-Tamamura (Kanazawa Inst. of Tech.), Susumu Kusanagi, Yuya Kanitani, Shigetaka Tomiya, Yoshihiro Kudo (Sony Semiconductor Solutions Corp.) ED2023-25 CPM2023-67 LQE2023-65 |
Accurate measurement of internal quantum efficiency (IQE) is necessary for a comprehensive understanding of the electron... [more] |
ED2023-25 CPM2023-67 LQE2023-65 pp.52-55 |
LQE, ED, CPM |
2023-12-01 10:20 |
Shizuoka |
(Shizuoka) |
Polarization control of surface emission from c-plane InGaN quantum wells and determination of deformation potential in InGaN alloy materials Keito Mori-Tamamura, Atsushi A. Yamaguchi (Kanazawa Inst. Tech), Tomohiro Makino, Maho Ohara, Tatsushi Hamaguchi, Rintaro Koda (Sony Semiconductor Solutions) ED2023-26 CPM2023-68 LQE2023-66 |
InGaN-quantum-well (QW) based vertical-cavity surface-emitting lasers (VCSELs), which are usually fabricated on the c-pl... [more] |
ED2023-26 CPM2023-68 LQE2023-66 pp.56-59 |
CPM, ED, LQE |
2022-11-25 10:35 |
Aichi |
Winc Aichi (Aichi Industry & Labor Center) (Aichi, Online) (Primary: On-site, Secondary: Online) |
[Encouragement Talk]
Experimental studies on the recombination mechanism in III-nitride semiconductors by simultaneous measurements of radiative and non-radiative recombinations Keito Mori-Tamamura, Yuya Morimoto, Atsushi A. Yamaguchi (Kanazawa Inst. of Tech.), Susumu Kusanagi, Yuya Kanitani, Yoshihiro Kudo, Shigetaka Tomiya (Sony) ED2022-40 CPM2022-65 LQE2022-73 |
The carrier dynamics in active layers of III-nitride-based optical devices, has not been fully understood, yet. We belie... [more] |
ED2022-40 CPM2022-65 LQE2022-73 pp.73-76 |
ED, CPM, LQE |
2021-11-25 13:30 |
Online |
Online (Online) |
Indium Composition Dependence of Internal Quantum Efficiency in InGaN Quantum-Wells Measured by Simultaneous Microscopic Photoacoustic and Photoluminescence Spectroscopy Keito Mori, Yuchi Takahashi, Yuya Morimoto, Atsushi A. Yamaguchi (Kanazawa Inst. of Tech.) ED2021-20 CPM2021-54 LQE2021-32 |
Accurate estimation of internal quantum efficiency (IQE) is necessary for comprehensive understanding of the carrier dyn... [more] |
ED2021-20 CPM2021-54 LQE2021-32 pp.29-32 |
ED, CPM, LQE |
2021-11-25 13:55 |
Online |
Online (Online) |
Waveguide loss measurements in III-nitride laser structures Kenta Ogasawara (KIT), Shigeta Sakai, Tadashi Okumura, Koichi Naniwae (Ushio Inc), Atsushi A. Yamaguchi (KIT) ED2021-21 CPM2021-55 LQE2021-33 |
InGaN is a semiconductor alloy material made of a mix of InN and GaN. InGaN can emit entire visible light by changing th... [more] |
ED2021-21 CPM2021-55 LQE2021-33 pp.33-36 |
ED, CPM, LQE |
2021-11-25 14:35 |
Online |
Online (Online) |
Photoluminescence study of high-purity GaN homoepitaxial layers grown by hydride vapor phase epitaxy Hiroto Imashiro, Ryo Yamahida, Hironao Kanamori, Ryuichi Watanabe (KIT), Takeshi Kimura, Taichiro Konno, Hajime Fujikura (SCIOCS), Atsushi A. Yamaguchi (KIT) ED2021-22 CPM2021-56 LQE2021-34 |
The fundamental material properties of GaN and its related materials have not been fully understood. One of the reasons ... [more] |
ED2021-22 CPM2021-56 LQE2021-34 pp.37-40 |
LQE, CPM, ED |
2020-11-26 10:05 |
Online |
Online (Online) |
Internal and External Quantum Efficiency in InGaN Quantum Wells Estimated by Simultaneous Photoacoustic and Photoluminescence Method and Integrating-Sphere Method Keito Mori, Yuchi Takahashi, Shigeta Sakai, Yuya Morimoto, Atsushi A. Yamaguchi (KIT), Susumu Kusanagi, Yuya Kanitani, Yoshihiro Kudo, Shigetaka Tomiya (Sony) ED2020-1 CPM2020-22 LQE2020-52 |
In our previous reports, we proposed photoacoustic (PA) and photoluminescence (PL) simultaneous measurements as a method... [more] |
ED2020-1 CPM2020-22 LQE2020-52 pp.1-4 |
CPM, LQE, ED |
2019-11-22 14:00 |
Shizuoka |
Shizuoka Univ. (Hamamatsu) (Shizuoka) |
Theoretical and Experimental Studies on Estimation Methods of Mobility Edge in InGaN Quantum Wells Takashi Fujita, Shigeta Sakai, Yuma Ikeda, Atsushi A. Yamaguchi (Kanazawa Inst. Tech.), Susumu Kusanagi, Yuya Kanitani, Yoshihiro Kudo, Shigetaka Tomiya (Sony) ED2019-56 CPM2019-75 LQE2019-99 |
InGaN is a mixed crystal of InN and GaN. Entire visible light range can be covered by changing their composition. Since ... [more] |
ED2019-56 CPM2019-75 LQE2019-99 pp.97-100 |
CPM, LQE, ED |
2019-11-22 14:20 |
Shizuoka |
Shizuoka Univ. (Hamamatsu) (Shizuoka) |
Estimation of Internal Quantum Efficiency in Various InGaN Single Quantum Wells with Different Qualities by Simultaneous Photoacoustic and Photoluminescence Measurements Keito Mori, Yuchi Takahashi, Yuya Morimoto, Atsushi A. Yamaguchi (KIT), Susumu Kusanagi, Yuya Kanitani, Yoshihiro Kudo, Shigetaka Tomiya (SONY) ED2019-57 CPM2019-76 LQE2019-100 |
In order to comprehensively understand the optical properties of nitride semiconductors, we believe accurate measurement... [more] |
ED2019-57 CPM2019-76 LQE2019-100 pp.101-106 |
ED, LQE, CPM |
2018-11-30 13:05 |
Aichi |
Nagoya Inst. tech. (Aichi) |
Theoretical and Experimental Studies on Potential Fluctuation in InGaN Quantum-Well Structures Takashi Fujita, Shigeta Sakai, Yuma Ikeda, Atsushi A. Yamaguchi (Kanazawa Inst. Tech.), Yuya Kanitani, Shigetaka Tomiya (Sony) ED2018-48 CPM2018-82 LQE2018-102 |
The bandgap energy of InGaN alloy materials can be controlled by changing their alloy composition. Since the composition... [more] |
ED2018-48 CPM2018-82 LQE2018-102 pp.75-78 |
LQE, CPM, ED |
2017-11-30 14:00 |
Aichi |
Nagoya Inst. tech. (Aichi) |
Model Analysis of I-V and Photoluminescence Characteristics under Photo-Excitation in InGaN LEDs Yusuke Ota, Shigeta Sakai, Atsushi A. Yamaguchi (Kanazawa Inst. of Tech.) ED2017-50 CPM2017-93 LQE2017-63 |
Current-voltage characteristics under photo-excitation in nitride-based LEDs have been measured to investigate the elect... [more] |
ED2017-50 CPM2017-93 LQE2017-63 pp.7-10 |
LQE, CPM, ED |
2017-11-30 14:25 |
Aichi |
Nagoya Inst. tech. (Aichi) |
Detailed analysis of S-shaped temperature dependence of photoluminescence peak energy in InGaN quantum wells Yuma Ikeda, Shigeta Sakai, Itsuki Oshima, Atsushi A. Yamaguchi (Kanazawa Inst. of Tehc.), Yuya Kanitani, Shigetaka Tomiya (Sony) ED2017-51 CPM2017-94 LQE2017-64 |
Analysis of S-shaped temperature dependence of PL peak energy is widely used to evaluate the degree of compositional flu... [more] |
ED2017-51 CPM2017-94 LQE2017-64 pp.11-14 |
LQE |
2016-12-16 11:40 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. (Tokyo) |
[Memorial Lecture]
Determination of internal quantum efficiency and recombination lifetime by simultaneous photo-acoustic and photoluminescence measurements in GaN Kohei Kawakami, Takashi Nakano, Atsushi A. Yamaguchi (Kanazawa Inst. Tech.) LQE2016-99 |
Internal quantum efficiency (IQE) is usually estimated from temperature dependence of photoluminescence (PL) intensity b... [more] |
LQE2016-99 pp.15-20 |
CPM, LQE, ED |
2016-12-13 08:40 |
Kyoto |
Kyoto University (Kyoto) |
Enhancement of Optical Gain by Controlling Waveguide Modes in Semipolar InGaN Quantum Well Laser Diodes Keigo Matsuura, Shigeta Sakai, Atsushi A. Yamaguchi (KIT) ED2016-67 CPM2016-100 LQE2016-83 |
In order to realize low-cost high-performance green semiconductor laser diodes (LDs), we proposed semipolar InGaN quantu... [more] |
ED2016-67 CPM2016-100 LQE2016-83 pp.51-54 |
LQE |
2015-12-18 09:50 |
Tokyo |
(Tokyo, Tokyo) |
Electromagnetic-field analysis simulation for the improvement of light extraction efficiency in III-nitride LEDs Satoshi Ozaki, Atsushi A. Yamaguchi (Kanazawa Inst. Tech.), Hiroki Goto, Akira Usui (Furukawa Co., Ltd.) LQE2015-123 |
The efficiency droop phenomenon is a big problem for high-brightness white LEDs. It has been pointed out that the proble... [more] |
LQE2015-123 pp.1-4 |
ED, LQE, CPM |
2015-11-26 15:55 |
Osaka |
Osaka City University Media Center (Osaka) |
Determination of internal quantum efficiency in GaN by simultaneous measurements of photoluminescence and photo-acoustic signals Takashi Nakano, Kouhei Kawakami, Atsushi A. Yamaguchi (KIT) ED2015-78 CPM2015-113 LQE2015-110 |
Internal quantum efficiency (IQE) is usually estimated from temperature dependence of photoluminescence (PL) intensity b... [more] |
ED2015-78 CPM2015-113 LQE2015-110 pp.53-58 |