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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED 2008-10-23
13:25		 Fukuoka Kyushu Institute of Technology High-Voltage AlGaN/GaN Schottky Barrier Diodes on Si Substrate with Low-Temperature GaN Cap Layer for Edge Termination
Atsushi Kamada (NJRC), Takashi Egawa (NIT) ED2008-149		  [more] ED2008-149
pp.143-148
ED, MW 2006-01-19
13:20		 Tokyo Kikai-Shinko-Kaikan Bldg. AlGaN/GaN HFETs with a low-temperature GaN cap layer
Tadayoshi Deguchi, Eiji Waki, Satoru Ono, Meiichi Yamashita, Atsushi Kamada, Atsushi Nakagawa (New Japan Radio), Hiroyasu Ishikawa, Takashi Egawa (Nagoya Institute of Technology) 		AlGaN/GaN heterostructure field-effect transistors (HFETs) with a highly resistive, low-temperature GaN (LT-GaN) cap lay... [more] ED2005-203 MW2005-157
pp.23-27
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