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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2022-06-21 15:10 |
Aichi | Nagoya Univ. VBL3F (Aichi) | [Invited Lecture]
Study on TMD mixed crystal characteristics and novel precursor for low-temperature CVD. Atsushi Ogura, Ryo Yokogawa (Meiji Univ., MREL), Hitoshi Wakabayashi (Tokyo Tech.)  SDM2022-28 |
[more] | SDM2022-28 pp.16-19 |
| SDM, ICD, ITE-IST [detail] | 2019-08-08 10:25 |
Hokkaido | Hokkaido Univ., Graduate School /Faculty of Information Science and (Hokkaido) | [Invited Lecture]
3300V Scaled IGBT Switched by 5V Gate Drive Toshiro Hiramoto, Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi (Univ. of Tokyo), Masanori Tsukuda (Green Electronics Research Inst.), Yohichiroh Numasawa (Meiji Univ,), Katsumi Satoh (Mitsubishi Electric Corp), Tomoko Matsudai (Toshiba Electronic Devices & Storage Corp.), Wataru Saito (Kyushu Univ.), Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Naoyuki Shigyo, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai (Tokyo Inst. of Technology), Atsushi Ogura (Meiji Univ.), Shin-ichi Nishizawa (Kyushu Univ.), Ichiro Omura (Kyushu Inst. of Tech.), Hiromichi Ohashi (Tokyo Inst. of Tech.) SDM2019-42 ICD2019-7 |
[more] | SDM2019-42 ICD2019-7 pp.31-34 |
| SDM | 2019-01-29 15:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Tokyo) | [Invited Talk]
Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi (Univ. of Tokyo), Masanori Tsukuda (GRIK), Yohichiroh Numasawa (Meiji Univ.), Katsumi Satoh (Mitsubishi Electric), Tomoko Matsudai, Wataru Saito (Toshiba Electronic Devices & Storage), Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Naoyuki Shigyo, Kazuo Tsutsui, Hiroshi Iwai (Tokyo Tech), Atsushi Ogura (Meiji Univ.), Shin-ichi Nishizawa (Kyushu Univ.), Ichiro Omura (Kyushu Inst. of Tech.), Hiromichi Ohashi (Tokyo Tech), Toshiro Hiramoto (Univ. of Tokyo) SDM2018-90 |
Functional trench-gated 1200V-10A class Si-IGBTs, designed based on the scaling concept, were fabricated, and 5V gate vo... [more] | SDM2018-90 pp.39-44 |
| SDM | 2018-10-18 13:30 |
Miyagi | Niche, Tohoku Univ. (Miyagi) | Process Evaluation of Si Nanowire for Thermoelectric Device by Raman Spectroscopy Ryo Yokogawa (Meiji Univ.), Motohiro Tomita, Takanobu Watanabe (Waseda Univ.), Atsushi Ogura (Meiji Univ.) SDM2018-61 |
Silicon nanowire (SiNW) is expected to be a new attractive thermoelectric material with excellent performance with low t... [more] | SDM2018-61 pp.47-50 |
| SDM | 2017-10-26 10:50 |
Miyagi | Niche, Tohoku Univ. (Miyagi) | Effect of ZrO2 seed layer on ferroelectricity of HfxZr1-xO2 thin film Takashi Onaya (Meiji Univ./NIMS), Toshihide Nabatame (NIMS/JST), Naomi Sawamoto (Meiji Univ.), Akihiko Ohi, Naoki Ikeda, Toyohiro Chikyow (NIMS), Atsushi Ogura (Meiji Univ.) SDM2017-57 |
The effect of crystallized ZrO2 seed layers, which inserted between a TiN bottom electrode and a ferroelectric HfxZr1-xO... [more] | SDM2017-57 pp.39-44 |
| SDM | 2017-06-20 16:10 |
Tokyo | Campus Innovation Center Tokyo (Tokyo) | Low-Carrier-Density Sputtered-MoS2 Film by Vapor-Phase- Sulfurization Kentaro Matsuura, Takumi Ohashi, Iriya Muneta (Tokyo Tech), Seiya Ishihara (Meiji Univ.), Kuniyuki Kakushima, Kazuo Tsutsui (Tokyo Tech), Atsushi Ogura (Meiji Univ.), Hitoshi Wakabayashi (Tokyo Tech) |
[more] | |
| ED, SDM | 2017-02-24 16:45 |
Hokkaido | Centennial Hall, Hokkaido Univ. (Hokkaido) | Reproduce and Prediction of Phonon in Group IV Binary Alloy Semiconductors by Lattice Dynamics Simulation Motohiro Tomita (Waseda Univ./Meiji Univ./JSPS), Atsushi Ogura (Meiji Univ.), Takanobu Watanabe (Waseda Univ.) ED2016-141 SDM2016-158 |
We have developed the interatomic potential of SiGe, GeSn, and SiSn binary mixed systems to reproduce the lattice consta... [more] | ED2016-141 SDM2016-158 pp.61-66 |
| SDM | 2016-06-29 11:55 |
Tokyo | Campus Innovation Center Tokyo (Tokyo) | Effect of Al2O3layer on leakage current properties for DRAM capacitor with ZrO2/Al2O3/ZrO2multilayer Takashi Onaya (Meiji Univ./NIMS), Toshihide Nabatame, Tomomi Sawada (NIMS/JST-CREST), Kazunori Kurishima (Meiji Univ./NIMS), Naomi Sawamoto (Meiji Univ.), Akihiko Ohi, Toyohiro Chikyo (NIMS), Atsushi Ogura (Meiji Univ.) SDM2016-37 |
We studied characteristic of DRAM capacitors with ZrO2/Al2O3/ZrO2 (ZAZ) multilayer fabricated by atomic layer deposition... [more] | SDM2016-37 pp.27-32 |
| SDM | 2016-06-29 16:40 |
Tokyo | Campus Innovation Center Tokyo (Tokyo) | MoS2 film formation by RF magnetron sputtering for thin film transistors Takumi Ohashi, Kentaro Matsuura (Tokyo Tech), Seiya Ishihara, Yusuke Hibino, Naomi Sawamoto (Meiji Univ.), Kuniyuki Kakushima, Kazuo Tsutsui (Tokyo Tech), Atsushi Ogura (Meiji Univ.), Hitoshi Wakabayashi (Tokyo Tech) SDM2016-46 |
Multi-layered MoS2 has been expected as a new candidate for complementary TFT material owing to its promising characteri... [more] | SDM2016-46 pp.75-78 |
| SDM | 2015-06-19 15:15 |
Aichi | VBL, Nagoya Univ. (Aichi) | Electrical properties of GIZO TFT with ultrathin Al2O3 insulators by PE-ALD method Kazunori Kurishima (Meiji Univ./NIMS), Toshihide Nabatame, Kazuhito Tsukagoshi, Akihiko Ohi, Toyohiro Chikyow (NIMS), Atsushi Ogura (Meiji Univ.) SDM2015-51 |
To investigate the influence of an Al2O3 layer on the electrical properties of Ga-In-Zn-O (GIZO) thin-film transistors (... [more] | SDM2015-51 pp.69-73 |
| SDM | 2014-10-17 11:10 |
Miyagi | Niche, Tohoku Univ. (Miyagi) | Epitaxial Growth of Ge and Ge1-xSnx Films by MOCVD Kohei Suda, Seiya Ishihara, Takahiro Kijima, Naomi Sawamoto (Meiji Univ.), Hideaki Machida, Masato Ishikawa, Hiroshi Sudoh (Gas-phase Growth), Yoshio Oshita (Toyota Technological Inst.), Atsushi Ogura (Meiji Univ.) SDM2014-91 |
Ge and Ge1-xSnx are attractive materials for the next-generation transistors and optical devices. We achieved to grow ... [more] |
SDM2014-91 pp.41-45 |
| SDM | 2013-10-18 10:30 |
Miyagi | Niche, Tohoku Univ. (Miyagi) | Introduction of the Bias Operation Hard X-ray Photoelectron Spectroscopy: Evaluation for Insulator/Si interface Norihiro Ikeno, Kohki Nagata (Meiji Univ.), Hiroshi Oji, Ichiro Hirosawa (JASRI), Atsushi Ogura (Meiji Univ.) SDM2013-94 |
(To be available after the conference date) [more] | SDM2013-94 pp.33-36 |
| SDM | 2013-06-18 10:35 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Tokyo) | Suppression of GeOx with rutile TiO2 Interlayer between HfO2 and Ge Kazuyoshi Kobashi (Meiji Univ.), Takahiro Nagata, Toshihide Nabatame, Yoshiyuki Yamashita (NIMS), Atsushi Ogura (Meiji Univ.), Toyohiro Chikyow (NIMS) SDM2013-48 |
As a alternative of Si channel, the Ge channel has been proposed and has attracted much attention because of high electr... [more] | SDM2013-48 pp.25-28 |
| SDM | 2012-10-25 16:10 |
Miyagi | Tohoku Univ. (Niche) (Miyagi) | Evaluation of crystalline phase in SiO2 thin film using grazing incidence X-ray diffraction Kohki Nagata, Takuya Yamaguchi, Atsushi Ogura (Meiji Univ.), Tomoyuki Koganezawa, Ichiro Hirosawa (JASRI), Tomoyuki Suwa, Akinobu Teramoto, Takeo Hattori, Tadahiro Ohmi (NICHe) SDM2012-91 |
Crystalline like structures in SiO2 thin films formed using oxygen molecules/radicals were investigated by X-ray reflect... [more] | SDM2012-91 pp.11-14 |
| SDM | 2011-10-21 09:50 |
Miyagi | Tohoku Univ. (Niche) (Miyagi) | Channel strain measurements in 32nm-node CMOSFETs Munehisa Takei, Hiroki Hashiguchi, Takuya Yamaguchi, Daisuke Kosemura, Kohki Nagata, Atsushi Ogura (Meiji Univ.) SDM2011-104 |
We performed strain analyses for 32-nm-node MPU by Raman measurements in conjunction with TEM observation. The channel s... [more] | SDM2011-104 pp.43-48 |
| SDM | 2010-10-21 14:00 |
Miyagi | Tohoku University (Miyagi) | [Invited Talk]
Channel strain evaluation for advanced LSI Atsushi Ogura, Daisuke Kosemura, Munehisa Takei, Motohiro Tomita (Meiji Univ.) SDM2010-152 |
[more] | SDM2010-152 pp.1-6 |
| SDM | 2010-10-21 15:00 |
Miyagi | Tohoku University (Miyagi) | Stress Tensor Measurements using Raman Spectroscopy with High-NA Oil-Immersion Lens Daisuke Kosemura, Atsushi Ogura (Meiji Univ.) SDM2010-153 |
Raman spectroscopy allows us to precisely evaluate stress with relatively high-spatial resolution and non-destructively.... [more] | SDM2010-153 pp.7-12 |
| SDM | 2010-10-22 16:20 |
Miyagi | Tohoku University (Miyagi) | Strain evaluation in Si at atomically flat SiO2/Si interface Maki Hattori (Meiji Univ.), Daisuke Kosemura (Meiji Univ./JSPS), Munehisa Takei, Kohki Nagata, Hiroaki Akamatsu, Motohiro Tomita, Yuuki Mizukami, Yuuki Hashiguchi, Takuya Yamaguchi, Atsushi Ogura (Meiji Univ.), Tomoyuki Suwa, Akinobu Teramoto, Takeo Hattori, Tadahiro Ohmi (NICHe), Tomoyuki Koganezawa (JASRI) SDM2010-170 |
We performed Raman spectroscopy and in-plane XRD measurement to clarify the structure and strain in Si at and near an at... [more] | SDM2010-170 pp.71-75 |
| ICD, SDM | 2010-08-27 16:25 |
Hokkaido | Sapporo Center for Gender Equality (Hokkaido) | On the Gate-Stack Origin Threshold Voltage Variability in Scaled FinFETs and Multi-FinFETs Yongxun Liu, Kazuhiko Endo, Shinich Ouchi (AIST), Takahiro Kamei (Meiji Univ.), Junichi Tsukada, Hiromi Yamauchi, Yuki Ishikawa (AIST), Tetsuro Hayashida (Meiji Univ.), Kunihiro Sakamoto, Takashi Matsukawa (AIST), Atsushi Ogura (Meiji Univ.), Meishoku Masahara (AIST) SDM2010-151 ICD2010-66 |
The threshold voltage (Vt) variability in scaled FinFETs with gate length down to 20 nm was systematically investigated.... [more] | SDM2010-151 ICD2010-66 pp.149-154 |
| SDM | 2008-06-10 09:30 |
Tokyo | An401・402, Inst. Indus. Sci., The Univ. of Tokyo (Tokyo) | Transconductance enhancement of strained-Si nanowire FETs Aya Seike, Tomoyuki Tange, Itsutaku Sano, Yuuki Sugiura, Ikushin Tsuchida, Hiromichi Ohta, Takanobu Watanabe (Waseda Univ.), Daisuke Kosemura, Atsushi Ogura (Meiji Univ.), Iwao Ohdomari (Waseda Univ.) SDM2008-48 |
We have demonstrated improved performance for Si nanowire FETs for CMOS operation by introducing tensile stress into the... [more] | SDM2008-48 pp.35-39 |
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