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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2013-06-18
16:10		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] Unusual Generation and Elimination of Mobile Ions in Thermally Grown Oxides in SiC-MOS Devices
Heiji Watanabe, Atthawut Chanthaphan (Osaka Univ), Yuki Nakano, Takashi Nakamura (ROHM), Takuji Hosoi, Takayoshi Shimura (Osaka Univ) SDM2013-61		 Unusual generation and elimination of mobile ions in thermally grown SiO2 on 4H-SiC(0001) were systematically investigat... [more] SDM2013-61
pp.87-90
SDM, ED
(Workshop)		 2012-06-27
11:30		 Okinawa Okinawa Seinen-kaikan [Invited Talk] Gate Stack Technologies for Silicon Carbide Power MOS Devices
Takuji Hosoi, Takashi Kirino, Yusuke Uenishi, Daisuke Ikeguchi, Atthawut Chanthaphan (Osaka Univ.), Akitaka Yoshigoe, Yuden Teraoka (JAEA), Shuhei Mitani, Yuki Nakano, Takashi Nakamura (ROHM), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) 		Silicon carbide (SiC) is a promising material for high-power electronic devices. Although SiO$_2$ dielectric film can be... [more]
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