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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, ED 2013-02-27
16:55		 Hokkaido Hokkaido Univ. Al2O3/InSb MOSFETs using an ultra thin InSb layer grown directly on a Si substrate
Koichi Maezawa, Taihei Ito, Azusa Kadoda, Koji Nakayama, Yuichiro Yasui, Masayuki Mori (Univ. of Toyama), Eiji Miyazaki, Takashi Mizutani (Nagoya Univ.) ED2012-135 SDM2012-164		 Al2O3/InSb/Si MOSFETs were fabricated with a thin InSb channel layer grown directly on Si(111) substrates. The InSb thic... [more] ED2012-135 SDM2012-164
pp.39-42
ED 2011-07-30
13:55		 Niigata Multimedia system center, Nagaoka Univ. of Tech. InSb MOS diodes on a Si(111) substrate grown by surface reconstruction ontrolled epitaxy
Azusa Kadoda, Tatsuya Iwasugi, Kimihiko Nakatani, Koji Nakayama, Masayuki Mori, Koichi Maezawa (Univ. of Toyama) ED2011-55		 We have reported that high quality InSb films can be grown by surface reconstruction controlled epitaxy. In the growth, ... [more] ED2011-55
pp.91-96
ED 2010-06-17
13:00		 Ishikawa JAIST Growth of InSb films on the V-grooved Si(001) substrate with InSb bi-layer
Tatsuya Iwasugi, Sara Khamseh, Azusa Kadoda, Kimihiko Nakatani, Masayuki Mori, Koichi Maezawa (Univ. of Toyama) ED2010-33		 We have reported that InSb films grown on a Si(111) substrate with InSb bi-layer rotate by 30° degree with respect to Si... [more] ED2010-33
pp.1-4
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