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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 4 of 4  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2015-01-27
10:25
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Dramatic Effects of Hydrogen-induced Out-diffusion of Oxygen from Ge Surface on Junction Leakage as well as Electron Mobility in n-channel Ge MOSFETs
ChoongHyun Lee, Tomonori Nishimura, Cimang Lu, Shoichi Kabuyanagi, Akira Toriumi (Univ. of Tokyo) SDM2014-136
 [more] SDM2014-136
pp.5-8
SDM 2014-11-07
13:50
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Interface Engineering for High Mobility Ge MOSFETs: Surface Orientation and Scattering Mechanism
ChoongHyun Lee, Tomonori Nishimura, Akira Toriumi (Univ. of Tokyo) SDM2014-107
 [more] SDM2014-107
pp.65-70
SDM 2014-01-29
10:00
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Reconsideration of Electron Mobility in Ge n-MOSFETs from Ge Substrate Side
ChoongHyun Lee, Tomonori Nishimura, T Tabata, Cimang Lu, W F Zhang, Kosuke Nagashio, Akira Toriumi (Univ. of Tokyo) SDM2013-136
We clarified wafer-related origins for electron mobility degradation in Ge n-MOSFETs. High-Ns electron mobility was dram... [more] SDM2013-136
pp.5-8
SDM 2010-06-22
14:35
Tokyo An401・402 Inst. Indus. Sci., The Univ. of Tokyo Control of GeO2 Properties and Improvement of Ge/GeO2 Interface Characteristics Based on the Understanding of Geo2/Ge Interface Reaction
Koji Kita (Univ. of Tokyo/JST-CREST), Sheng Kai Wang, ChoongHyun Lee, Mahoro Yoshida (Univ. of Tokyo), Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi (Univ. of Tokyo/JST-CREST) SDM2010-43
 [more] SDM2010-43
pp.55-60
 Results 1 - 4 of 4  /   
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