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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2015-01-27 10:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Dramatic Effects of Hydrogen-induced Out-diffusion of Oxygen from Ge Surface on Junction Leakage as well as Electron Mobility in n-channel Ge MOSFETs ChoongHyun Lee, Tomonori Nishimura, Cimang Lu, Shoichi Kabuyanagi, Akira Toriumi (Univ. of Tokyo) SDM2014-136 |
[more] |
SDM2014-136 pp.5-8 |
SDM |
2014-11-07 13:50 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Interface Engineering for High Mobility Ge MOSFETs: Surface Orientation and Scattering Mechanism ChoongHyun Lee, Tomonori Nishimura, Akira Toriumi (Univ. of Tokyo) SDM2014-107 |
[more] |
SDM2014-107 pp.65-70 |
SDM |
2014-01-29 10:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Reconsideration of Electron Mobility in Ge n-MOSFETs from Ge Substrate Side ChoongHyun Lee, Tomonori Nishimura, T Tabata, Cimang Lu, W F Zhang, Kosuke Nagashio, Akira Toriumi (Univ. of Tokyo) SDM2013-136 |
We clarified wafer-related origins for electron mobility degradation in Ge n-MOSFETs. High-Ns electron mobility was dram... [more] |
SDM2013-136 pp.5-8 |
SDM |
2010-06-22 14:35 |
Tokyo |
An401・402 Inst. Indus. Sci., The Univ. of Tokyo |
Control of GeO2 Properties and Improvement of Ge/GeO2 Interface Characteristics Based on the Understanding of Geo2/Ge Interface Reaction Koji Kita (Univ. of Tokyo/JST-CREST), Sheng Kai Wang, ChoongHyun Lee, Mahoro Yoshida (Univ. of Tokyo), Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi (Univ. of Tokyo/JST-CREST) SDM2010-43 |
[more] |
SDM2010-43 pp.55-60 |
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