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Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD, SDM 2009-07-17
14:10
Tokyo Tokyo Institute of Technology Low Current Perpendicular Domain Wall Motion Cell for Scalable High-Speed MRAM
Shunsuke Fukami, Tetsuhiro Suzuki, Kiyokazu Nagahara, Norikazu Ohshima (NEC Corp.), Yasuaki Ozaki (NECEL Corp.), Shinsaku Saito, Ryusuke Nebashi, Noboru Sakimura, Hiroaki Honjo, Kaoru Mori, Chuji Igarashi, Sadahiko Miura, Nobuyuki Ishiwata, Tadahiko Sugibayashi (NEC Corp.) SDM2009-114 ICD2009-30
We have developed a new magnetic random access memory with current-induced domain wall motion (DW-motion MRAM) using per... [more] SDM2009-114 ICD2009-30
pp.91-95
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