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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2013-10-17
14:50
Miyagi Niche, Tohoku Univ. Electrical Properties and Reliability of Ultrathin HfN Gate Insulator Formed on Si(100) and Si(110)
Nithi Atthi, Dae-Hee Han, Shun-ichiro Ohmi (Tokyo Inst. of Tech.) SDM2013-89
 [more] SDM2013-89
pp.5-9
SDM 2013-10-17
15:40
Miyagi Niche, Tohoku Univ. Effect of silicon surface roughness on 3-D MOS capacitor with ultrathin HfON gate insulator formed by ECR plasma sputtering
Dae-Hee Han, Shun-ichiro Ohmi (Tokyo Inst. of Tech.) SDM2013-90
 [more] SDM2013-90
pp.11-14
SDM 2012-10-26
13:25
Miyagi Tohoku Univ. (Niche) Effect of silicon surface roughness on MOSFET performance with ultra-thin HfON gate insulator formed by ECR sputtering
Dae-Hee Han, Shun-ichiro Ohmi (Tokyo Inst. of Tech.) SDM2012-96
 [more] SDM2012-96
pp.37-40
SDM, ED
(Workshop)
2012-06-28
10:15
Okinawa Okinawa Seinen-kaikan Effect of Si surface roughness on EOT reduction for HfON gate insulator formed by ECR plasma oxidation of HfN
Dae-Hee Han, Shun-ichiro Ohmi (Tokyo Tech)
 [more]
SDM 2011-10-20
15:20
Miyagi Tohoku Univ. (Niche) Effect of Si surface roughness on electrical characteristics of HfON gate insulator
Dae-Hee Han, Shun-ichiro Ohmi (Tokyo Inst. of Tech.) SDM2011-100
In this paper, the effect of Si surface roughness on electrical characteristics of HfON gate insulator formed by the ele... [more] SDM2011-100
pp.17-20
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