|
|
|
|
|
All Technical Committee Conferences (Searched in: All Years)
|
|
|
| Search Results: Conference Papers |
| Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
|
|
| Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
| OME, SDM |
2019-04-26
15:20 |
Kagoshima |
Yakushima Environmental and Culture Village Center |
Heterojunction channel IGZO Thin-Film Transistor
Mamoru Furuta, Daichi Koretomo, Ryunosuke Higashi, Shuhei Hamada (KUT.)  SDM2019-6 OME2019-6 |
[more] |
SDM2019-6 OME2019-6
pp.23-26 |
| EID, SDM, ITE-IDY [detail] |
2018-12-25
11:45 |
Kyoto |
|
Device Using Thin Film of GTO by MistCVD Method
Yuta Takishita (Ryukoku Univ.), Daichi Koretomo, Yusaku Magari, Mamoru Furuta (KUT), Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) |
[more] |
|
| EID, SDM, ITE-IDY [detail] |
2018-12-25
14:30 |
Kyoto |
|
Dependence of thermoelectric properties and structure of Ga-Sn-O thin films on annealing
Yoku Ikeguchi, Tatsuya Aramaki (Ryukoku Univ.), Kenta Umeda, Mutsunori Uenuma (NAIST), Daichi Koretomo, Yusaku Magari, Mamoru Furuta (KUT), Mutsumi Kimura (Ryukoku Univ.) |
[more] |
|
| SDM, OME |
2018-04-07
13:10 |
Okinawa |
Okinawaken Seinen Kaikan |
[Invited Talk]
properties of IGZO thin-film transistors.
Mamoru Furuta, Aman S G Mehadi, Daichi Koretomo, Yusaku Magari (Kochi Univ. of Tech.) SDM2018-6 OME2018-6 |
(To be available after the conference date) [more] |
SDM2018-6 OME2018-6
pp.25-28 |
| SDM, OME |
2018-04-07
13:50 |
Okinawa |
Okinawaken Seinen Kaikan |
Thin-film transistor with InGaZnOx-hetero-channel
Ryunosuke Higashi, Daichi Koretomo, Hirosato Tanaka (Kochi Univ. of Tech.), Seiichiro Takahashi, Isamu Yashima (Mitsui Mining & Smelting Co.,LTD), Mamoru Furuta (Kochi Univ. of Tech.) SDM2018-7 OME2018-7 |
(To be available after the conference date) [more] |
SDM2018-7 OME2018-7
pp.29-31 |
| SDM, OME |
2016-04-09
10:50 |
Okinawa |
Okinawa Prefectural Museum & Art Museum |
Device simulation analysis of carrier transport in In-Ga-Zn-O thin-film transistors
-- Influence of carrier concentration in back-channel region --
Daichi Koretomo, Tatsuya Toda (KUT), Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.), Mamoru Furuta (KUT) SDM2016-14 OME2016-14 |
The influence of high carrier concentration region in In-Ga-Zn-O (IGZO ) on the electrical properties of a bottom-gate I... [more] |
SDM2016-14 OME2016-14
pp.57-60 |
|
|
|
|
|
|
Copyright and reproduction :
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
|
[Return to Top Page]
[Return to IEICE Web Page]
|