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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ISEC | 2018-09-07 14:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Extension of Easy-to-Understand Structure for Chosen-Ciphertext-Attack Security from Decisional Diffie-Hellman Assumption Daisuke Ueda, Bagus Santoso (UEC)  ISEC2018-59 |
[more] | ISEC2018-59 pp.43-50 |
| MW, ED | 2017-01-26 14:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
GaN Power Transistors on Si Substrates for Switching and High-Frequency Applications Tetsuzo Ueda, Yasuhiro Uemoto, Hiroyuki Sakai, Tsuyoshi Tanaka (Panasonic), Daisuke Ueda (Kyoto Insutitute of Tech.) ED2016-96 MW2016-172 |
GaN transistors have been widely investigated for power deices to be used in various power switching systems. In additio... [more] | ED2016-96 MW2016-172 pp.1-5 |
| ICD, SDM | 2012-08-03 10:05 |
Hokkaido | Sapporo Center for Gender Equality, Sapporo, Hokkaido | [Invited Talk]
A DC-Isolated Gate Drive IC with Drive-by-Microwave Technology Shuichi Nagai, Noboru Negoro, Takeshi Fukuda, Yasufumi Kawai, Tetsuzo Ueda, Tsuyoshi Tanaka, Nobuyuki Otsuka, Daisuke Ueda (Panasonic) SDM2012-79 ICD2012-47 |
We have developed new isolated gate drivers with the Drive-by-Microwave Technology that regenerates the gate signal afte... [more] | SDM2012-79 ICD2012-47 pp.89-92 |
| SDM, ED (Workshop) |
2012-06-27 10:10 |
Okinawa | Okinawa Seinen-kaikan | [Keynote Address]
Recent Advance of GaN Power Electronics Daisuke Ueda (Panasonic) |
[more] | |
| SDM, ED (Workshop) |
2012-06-29 08:15 |
Okinawa | Okinawa Seinen-kaikan | [Invited Talk]
Integrated Design Platform for Power Electronics Applications with GaN Devices Kenji Mizutani, Hiroaki Ueno, Yuji Kudoh, Shuichi Nagai, Kaoru Inoue, Nobuyuki Otsuka, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic) |
[more] | |
| ED, MW | 2012-01-12 14:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg | High current and high voltage GaN-based multi-junction diode with p-type barrier controlling layer Daisuke Shibata, Kazuhiro Kaibara, Tomohiro Murata, Yasuhiro Yamada, Tatsuo Morita, Yoshiharu Anda, Masahiro Ishida, Hidetoshi Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic) ED2011-137 MW2011-160 |
[more] | ED2011-137 MW2011-160 pp.101-105 |
| EE | 2011-11-18 11:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | A Novel Multi-Input DC-DC Converter with High Power Efficiency Ken Hirakida, Masayuki Suetomi, Daisuke Ueda, Tsubasa Ito (Nagasaki Univ.), Wengzong Lin (Minjiang Univ.), Hirofumi Matsuo (Nagasaki Univ.) EE2011-26 |
This paper deals with the multi-input DC-DC converter with high power efficiency. A novel full-bridge type zero voltage... [more] | EE2011-26 pp.13-17 |
| EE | 2011-11-18 14:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | High Frequency Isolation Circuit with High Efficiency for the High DC Voltage Power Feeding System Daisuke Imamichi, Masayuki Suetomi, Shinji Matsumoto, Daisuke Ueda, Jong-Ruey Yang, Tsubasa Ito (Nagasaki Univ.), Wengzong Lin (Minjiang Univ.), Hirofumi Matsuo (Nagasaki Univ.) EE2011-29 |
Recently, the high voltage DC feeding system has been researched and developed to save electrical energy and to make use... [more] | EE2011-29 pp.31-35 |
| MW, ED | 2011-01-14 10:35 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Boosting of Blocking Voltages in GaN Transistors by Widening Depletion Layer in Si Substrate Hidekazu Umeda, Asamira Suzuki, Yoshiharu Anda, Masahiro Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic Co.) ED2010-184 MW2010-144 |
We propose a novel structure to boost the breakdown voltages of AlGaN/GaN hetero junction field effect transistors (HFET... [more] | ED2010-184 MW2010-144 pp.51-54 |
| MW, ED | 2009-01-14 15:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg | GaN-based Natural Super Junction Diodes Hidetoshi Ishida, Daisuke Shibata, Hisayoshi Matsuo, Manabu Yanagihara, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic Co.) ED2008-202 MW2008-167 |
We propose a new breakdown mechanism of GaN-based electron devices called “Natural Super Junction”. The junction model i... [more] | ED2008-202 MW2008-167 pp.23-27 |
| LQE, ED, CPM | 2008-11-28 15:20 |
Aichi | Nagoya Institute of Technology | Depth profiles of strain in AlGaN/GaN heterostructures grown on si by electron backscatter diffraction technique Teruki Ishido, Hisayoshi Matsuo, Takuma Katayama, Tetsuzo Ueda, Kaoru Inoue, Daisuke Ueda (Panasonic) ED2008-181 CPM2008-130 LQE2008-125 |
(To be available after the conference date) [more] | ED2008-181 CPM2008-130 LQE2008-125 pp.145-148 |
| SDM, ED | 2008-07-11 10:50 |
Hokkaido | Kaderu２・７ | High Breakdown Voltage of 10400V in AlGaN/GaN HFET with AlN Passivation Daisuke Shibata, Hisayoshi Matsuo (Matsushita Electric Industrial), Shuichi Nagai, Ming Li (Panasonic Boston Lab), Naohiro Tsurumi, Hidetoshi Ishida, Manabu Yanagihara, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Matsushita Electric Industrial) ED2008-73 SDM2008-92 |
We report ultra high blocking voltage AlGaN/GaN heterojunction transistors (HFETs) using thick poly-crystalline AlN (pol... [more] | ED2008-73 SDM2008-92 pp.177-181 |
| ED, MW | 2008-01-16 16:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | 10400V Blocking Voltage AlGaN/GaN Power HFET Daisuke Shibata, Yasuhiro Uemoto, Manabu Yanagihara, Hidetoshi Ishida (Panasonic), Shuichi Nagai (Panasonic Boston Lab.), Hisayoshi Matsuo (Panasonic), Ming Li (Panasonic Boston Lab.), Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic) ED2007-213 MW2007-144 |
We report ultra high blocking voltage AlGaN/GaN heterojunction transistors (HFETs) on sapphire using via-holes and thick... [more] | ED2007-213 MW2007-144 pp.39-43 |
| ED, MW | 2008-01-17 14:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | A 26GHz Short-Range UWB Vehicular-Radar Using 2.5Gcps Spread Spectrum Modulation Takeshi Fukuda, Noboru Negoro, Shinji Ujita, Shuichi Nagai, Masaaki Nishijima, Hiroyuki Sakai, Tsuyoshi Tanaka, Daisuke Ueda (Matsushita Electric) ED2007-223 MW2007-154 |
A 26GHz short-range radar system has been developed based on a 2.5Gcps direct sequence spread spectrum technique combine... [more] | ED2007-223 MW2007-154 pp.93-97 |
| ED, SDM | 2007-06-25 13:00 |
Overseas | Commodore Hotel Gyeongju Chosun, Gyeongju, Korea | [Invited Talk]
AlGaN/GaN Power Transistors for power switching applications Yasuhiro Uemoto, Masahiro Hikita, Hiroaki Ueno, Tomohiro Murata, Hisayoshi Matsuo, Hidetoshi Ishida, Manabu Yanagihara, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Matsushita) |
Recently developed normally-off transistor named GIT (Gate Injection Transistor) and novel passivation technique using p... [more] | |
| MW, ED | 2007-01-19 14:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | A Normally-off AlGaN/GaN Transistor with Low On-State Resistance Using Hole-Injection Yasuhiro Uemoto, Masahiro Hikita, Hiroaki Ueno, Hisayoshi Matsuo, Hidetoshi Ishida, Manabu Yanagihara, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic) |
We report a normally-off GaN-based transistor using conductivity modulation, which we call GIT (Gate Injection Transisto... [more] | ED2006-235 MW2006-188 pp.193-197 |
| LQE | 2006-12-08 10:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Polarization control of VCSEL array by utilizing surface plasmon resonance Toshikazu Onishi, Tatsuya Tanigawa, Jun Shimizu, Tetsuzo Ueda, Daisuke Ueda (Panasonic) |
[more] | LQE2006-106 pp.17-20 |
| MW, ED | 2005-11-17 13:35 |
Saga | A K-band AlGaN/GaN HFET MMIC Amplifier on Sapphire using novel superlattice cap layer Masaaki Nishijima, Tomohiro Murata, Yutaka Hirose, Masahiro Hikita, Noboru Negoro, Hiroyuki Sakai, Yasuhiro Uemoto, Kaoru Inoue, Tsuyoshi Tanaka, Daisuke Ueda (Matsushita Electric) |
We have developed a K-band AlGaN/GaN HFET MMIC amplifier by applying an AlGaN/GaN superlattice (SL) capped structure on ... [more] | ED2005-165 MW2005-120 pp.39-43 |
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| MW, ED | 2005-01-18 09:20 |
Tokyo | - Masahiro Hikita, Manabu Yanagihara, Kazushi Nakazawa, Hiroaki Ueno, Yutaka Hirose, Tetsuzo Ueda, Yasuhiro Uemoto, Tsuyoshi Tanaka, Daisuke Ueda (Matsushita Electric), Takashi Egawa (Nagoya Inst. of Tech.) |
In order to apply an AlGaN/GaN HFET to high power switching applications, both high breakdown voltage and low on-state r... [more] | ED2004-212 MW2004-219 pp.1-5 |
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| MW, ED | 2005-01-18 10:10 |
Tokyo | - Tomohiro Murata, Masahiro Hikita, Yutaka Hirose, Kaoru Inoue, Yasuhiro Uemoto, Tsuyoshi Tanaka, Daisuke Ueda (Matsushita Electric) |
[more] | ED2004-214 MW2004-221 pp.13-17 |
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