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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2011-10-21
10:50		 Miyagi Tohoku Univ. (Niche) AR-XPS Study on Chemical Bonding State of In0.53Ga0.47As Surface treated by Various Surface Treatments
Yuya Numajiri, Koji Yamashita, Arata Komatsu (Tokyo City Univ.), Darius Zade (FRC. Tokyo Inst. of Tech), Kuniyuki Kakushima (IGSSE. Tokyo Inst. of Tech.), Hiroshi Iwai (FRC. Tokyo Inst. of Tech), Hiroshi Nohira (Tokyo City Univ.) SDM2011-106		 We have investigated the effect of HF, HF + air exposure, (NH4)2S and Hexamethydisilazane treatments on the chemical bon... [more] SDM2011-106
pp.53-58
SDM 2011-07-04
10:00		 Aichi VBL, Nagoya Univ. Defect analysis of HfO2/In0.53Ga0.47As interface using capacitance-voltage and conductance methods
Darius Zade, Ryuji Hosoi, Ahmet Parhat, Kuniyuki Kakushima, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai (Tokyo Inst. of Tech.) SDM2011-53		 The changes in electrical characteristics of W/HfO2or La2O3/ In0.53Ga0.47As capacitors by wet chemical treatment before ... [more] SDM2011-53
pp.17-22
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