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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 8 of 8  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
VLD, DC, RECONF, ICD, IPSJ-SLDM
(Joint) [detail]
2020-11-17
09:55
Online Online Efficient computation of inductive invariant through flipflop selection
Fudong Wang, Masahiro Fujita (U-Tokyo) VLD2020-20 ICD2020-40 DC2020-40 RECONF2020-39
As we all know, verification plays more and more important role in VLSI design and manufacture. However, it always takes... [more] VLD2020-20 ICD2020-40 DC2020-40 RECONF2020-39
pp.54-59
TL 2019-03-18
11:45
Tokyo Waseda University What Makes Students Aware of the Significance of Logical Expression -- Teaching Design and Analysis of Students Learning --
Dong Wang (TUFS) TL2018-58
(To be available after the conference date) [more] TL2018-58
pp.43-46
TL 2018-12-09
15:30
Ehime Ehime University The reexamination of the nature of 'hayaku' : Be Means of Chinese Translation
Dong Wang (TUFS) TL2018-49
 [more] TL2018-49
pp.29-31
SDM 2015-06-19
13:40
Aichi VBL, Nagoya Univ. Fabrication of PtGe/Ge contacts with low hole barrier and its application to metal source/drain Ge p-channel MOSFETs
Yuta Nagatomi, Shintaro Tanaka, Yuichi Nagaoka, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima (Kyushu Univ.) SDM2015-47
The fabrication of PtGe/Ge contacts with low hole barrier height (ΦBP) and its electrical passivation were investigated.... [more] SDM2015-47
pp.47-50
SDM 2014-06-19
09:50
Aichi VBL, Nagoya Univ. Investigation of Al-PMA Effect on Al2O3/GeOx/Ge Gate Stack
Yuta Nagatomi, Yuichi Nagaoka, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima (Kyushu Univ.) SDM2014-44
We investigated the Al-PMA effect on Al2O3/GeOX/Ge gate stacks. The Al-PMA is effective for Al2O3/GeOX/Ge gate stacks, s... [more] SDM2014-44
pp.7-10
SDM 2013-06-18
10:55
Tokyo Kikai-Shinko-Kaikan Bldg. Mobility Enhancement for Ge p-MOSFET with Metal Source/Drain by Hf Introduction into Gate Stack
Keisuke Yamamoto, Takahiro Sada, Dong Wang, Hiroshi Nakashima (Kyushu Univ.) SDM2013-49
Metal source/drain (S/D) with extremely low parasitic resistance is needed for high performance Ge CMOS. We found that H... [more] SDM2013-49
pp.29-32
SDM 2012-06-21
17:15
Aichi VBL, Nagoya Univ. Alleviation of Fermi level pinning for TiN/Ge contact and its application to MOS device
Keisuke Yamamoto, Masatoshi Iyota, Dong Wang, Hiroshi Nakashima (Kyushu Univ.) SDM2012-61
It has been recognized that the formation of a metal/Ge contact with low electron barrier height and low contact resista... [more] SDM2012-61
pp.97-102
SDM 2009-06-19
14:10
Tokyo An401・402 Inst. Indus. Sci., The Univ. of Tokyo Electrical Characterization of High-k Gate Dielectrics on Ge with HfGeN and GeO2 Interlayers -- Formation of Insulator on Ge Substrate --
Hiroshi Nakashima, Kana Hirayama, Haigui Yang, Dong Wang (Kyushu Univ.) SDM2009-35
We are searching MIS structure with good interface and insulating properties for high mobility Ge channel. Our approach... [more] SDM2009-35
pp.51-56
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