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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| MW | 2024-11-15 10:35 |
Okinawa | JA Kume-jima Yuntaku house (Primary: On-site, Secondary: Online) |
X-band 270 W Internally-matched High Power Amplifier Using GaN-on-GaN HEMTs Jun Kamioka, Eigo Kuwata, Shintaro Shinjo, Tsutomu Matsuura, Shingo Tomohisa, Eiji Yagyu (Mitsubishi Electric Corp.)  MW2024-135 |
[more] | MW2024-135 pp.61-64 |
| MW, AP (Joint) |
2023-09-28 10:10 |
Kochi | Kochi Castle Museum of History (Primary: On-site, Secondary: Online) |
C-Ku-band GaN MMIC Low Noise Amplifier Using Frequency Selective Parallel Feedback Circuit Ken Kudara, Jun Kamioka, Eigo Kuwata, Yutaro Yamaguchi, Yoshitaka Kamo, Shintaro Shinjo (Mitsubishi Electric) MW2023-81 |
This paper represents a C-Ku band GaN MMIC low noise amplifier (LNA) for a transmitter and receiver module. In order to ... [more] | MW2023-81 pp.7-10 |
| SANE | 2023-05-23 10:10 |
Kanagawa | Information Technology R & D Center, MITSUBISHI Electric Corp. (Primary: On-site, Secondary: Online) |
Broadband High Power, High Efficiency Microwave Amplifiers Enabled by GaN HEMT Eigo Kuwata, Jun Kamioka, Shintaro Shinjo, Koji Yamanaka (MELCO) SANE2023-3 |
Semiconductors are increasingly replacing electron tubes in microwave transmitters used for observation, communication a... [more] | SANE2023-3 pp.12-17 |
| MW, ED | 2023-01-27 11:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Primary: On-site, Secondary: Online) |
Over 670 W output X-band IMFET Using non-Uniform Comb Lines for Stabilization Eigo Kuwata, Takumi Sugitani, Takashi Yamasaki, Yoshitaka Kamo, Shintaro Shinjo (MELCO) ED2022-90 MW2022-149 |
[more] | ED2022-90 MW2022-149 pp.25-28 |
| ED, MW | 2022-01-27 13:40 |
Online | Online | Effects of Load Impedances at Third Order Intermodulation Tones Eigo Kuwata, Yutaro Yamaguchi, Masaomi Tsuru (Mitsubishi Electric), Johannes Benedikt (Cardiff University) ED2021-63 MW2021-105 |
This paper reports on new multitone active loadpull measurements at the specific frequencies of third order intermodulat... [more] | ED2021-63 MW2021-105 pp.7-11 |
| EST, MW, OPE, MWP, EMT, IEE-EMT, THz [detail] | 2018-07-19 15:00 |
Hokkaido | A 26-W X-band high efficiency GaN MMIC power amplifier with compact spurious suppression filters Jun Kamioka, Eigo Kuwata, Kazuhiko Nakahara, Yoshitaka Kamo, Masatake Hangai, Shintaro Shinjo (Mitsubishi Electric) EMT2018-29 MW2018-44 OPE2018-32 EST2018-27 MWP2018-28 |
A 26-W X-band high efficiency GaN MMIC power amplifier with compact spurious suppression filters is presented. GaN MMIC ... [more] | EMT2018-29 MW2018-44 OPE2018-32 EST2018-27 MWP2018-28 pp.119-124 |
|
| MW, WPT | 2018-04-27 14:50 |
Tokyo | Kikai-Shinko-Kaikan Building | S-band Tx Module with Cu Pillar Interconnection Si/GaN 3D Chip Embedding Substrate Kengo Kawasaki, Eigo Kuwata, Hidenori Ishibashi, Tomohiro Yao, Kiyoshi Ishida, Kazuhiro Maeda, Hironobu Shibata, Masaomi Tsuru, Kazutomi Mori, Mitsuhiro Shimozawa, Hiroshi Fukumoto (Mitsubishi Electric Corp.) WPT2018-5 MW2018-5 |
A SiGe chip and GaN chip packaged Tx module in S-band is represented. SiGe and GaN with Redistribution Layer (RDL) are i... [more] | WPT2018-5 MW2018-5 pp.19-23 |
| ED, MW | 2018-01-26 09:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | UHF-C Band Broadband Power Amplifier with Series Connected SiGe HBT and GaN HEMT Eigo Kuwata, Kengo Kawasaki, Daisuke Tsunami, Kazuhiro Maeda, Koji Yamanaka (MELCO) ED2017-98 MW2017-167 |
This paper reports on a multi chips amplifier consists of Gallium Nitride High Electron Mobility Transistor (GaN HEMT) a... [more] | ED2017-98 MW2017-167 pp.25-29 |
| AP, MW (Joint) |
2017-09-22 14:25 |
Saitama | Saitama University | 20W Output Power C-X Band Broadband High Efficiency High Power Amplifier with MIM Resonator Type Multi Matching Network Eigo Kuwata, Dai Ninomiya, Daisuke Tsunami, Makoto Kimura, Koji Yamanaka (MELCO) MW2017-76 |
[more] | MW2017-76 pp.47-52 |
| MW, ED | 2017-01-27 14:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | C-Ku band over 10 W Broadband Power Amplifier using Broadband Series-Shunt Inductor Matching Network Eigo Kuwata, Atsuo Sugimoto, Hidetoshi Koyama, Yoshitaka Kamo, Ryota Komaru, Koji Yamanaka (Mitsubishi Electric) ED2016-110 MW2016-186 |
This paper reports on a Gallium Nitride High Electron Mobility Transistor (GaN HEMT) Monolithic Microwave Integrated Cir... [more] | ED2016-110 MW2016-186 pp.75-79 |
| ED | 2016-01-20 15:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Analysis of Millimeter Wave Oscillation in GaN HEMT Unit Cell Shinsuke Watanabe, Shouhei Imai, Eigo Kuwata, Hidetoshi Koyama, Yoshitaka Kamo, Yoshitsugu Yamamoto (Mitsubishi Electric) ED2015-119 |
A millimeter wave oscillation was observed in GaN HEMT unit cell. To prevent this oscillation, we performed electromagne... [more] | ED2015-119 pp.43-48 |
| MW | 2015-12-18 16:10 |
Tokyo | Tokyo Univ. of Science | [Special Talk]
Report on European Microwave Week 2015 Tadashi Kawai (Univ. of Hyogo), Eigo Kuwata (Mitsubishi Electric), Chun-Ping Chen (Kanagawa Univ.), Tetsuya Ueda (Kyoto Inst. of Tech.), Kouji Shibata (Hachinohe Inst. of Tech.), Ryosuke Suga (Aoyama Gakuin Univ.), Naoki Shinohara (Kyoto Univ.), Masahiro Horibe (AIST) MW2015-158 |
[more] | MW2015-158 pp.139-145 |
| MW | 2014-11-20 13:50 |
Nagasaki | Nagasaki Univ. | Optimization of two-cell distributed power amplifiers Christer Andersson, Eigo Kuwata, Koji Yamanaka (Mitsubishi Electric) MW2014-130 |
A multi-harmonic numerical calculation method is employed to optimize two-cell distributed PAs with two independent RF i... [more] | MW2014-130 pp.37-41 |
| MW, OPE, EMT, MWP, EST, IEE-EMT [detail] | 2014-07-17 10:00 |
Hokkaido | Muroran Inst. of Tech. | C-Ku Band Ultra Broadband High Power Reactive Matching MMIC Amplifier using Broadband Interstage Matching Network Shuichi Sakata, Eigo Kuwata, Koji Yamanaka, Tasuku Kirikoshi, Hidetoshi Koyama, Yoshitaka Kamo, Hiroshi Fukumoto (Mitsubishi Electric) MW2014-53 OPE2014-22 EST2014-14 MWP2014-11 |
This paper reports on a Gallium Nitride High Electron Mobility Transistor (GaN HEMT) Monolithic Microwave Integrated Cir... [more] | MW2014-53 OPE2014-22 EST2014-14 MWP2014-11 pp.1-5 |
| MW, OPE, EMT, MWP, EST, IEE-EMT [detail] | 2014-07-17 10:25 |
Hokkaido | Muroran Inst. of Tech. | X Band High Power and High Efficiency Amplifier with 2nd Harmoics rejection circuits Eigo Kuwata, Koji Yamanaka, Shuichi Sakata, Hidetoshi Koyama, Yoshitaka Kamo, Akihiro Ando, Kazuhiko Nakahara, Hiroshi Fukumoto (Mitsubishi Electric) MW2014-54 OPE2014-23 EST2014-15 MWP2014-12 |
[more] | MW2014-54 OPE2014-23 EST2014-15 MWP2014-12 pp.7-10 |
| MW | 2013-11-21 15:45 |
Kagoshima | Kagoshima Prefectural Culture Center | [Special Talk]
Report on 2013 IEEE MTT-S International Microwave Symposium Masataka Ohira (Saitama Univ.), Tetsuya Ueda (Kyoto Inst. Tech.), Hiroshi Okazaki (NTT DOCOMO), Eigo Kuwata (Mitsubishi Electric Corp.), Hiroyuki Takahashi (NTT), Shotaro Nagai (Yamaguchi Univ.), Zhewang Ma (Saitama Univ.), Shingo Yamanouchi (NEC) MW2013-140 |
This is a report on 2013 IEEE MTT-S International Microwave Symposium (IMS 2013) held at Seattle, WA, USA, on June 2-7, ... [more] | MW2013-140 pp.51-60 |
| OPE, MW, MWP, EMT, EST, IEE-EMT [detail] | 2011-07-22 11:25 |
Hokkaido | C-Ku band ultra broadband GaN MMIC amplifier with 20W output power Eigo Kuwata, Koji Yamanaka, Hidetoshi Koyama, Tasuku Kirikoshi, Masatoshi Nakayama, Yoshihito Hirano (Melco) MW2011-59 OPE2011-46 EST2011-45 MWP2011-27 |
[more] | MW2011-59 OPE2011-46 EST2011-45 MWP2011-27 pp.119-123 |
|
| MW | 2010-05-13 16:00 |
Hyogo | University of Hyogo | 11W output power C-X band broadband high power balanced amplifier using GaN HEMT Eigo Kuwata, Koji Yamanaka, Tasuku Kirikoshi, Akira Inoue, Yoshihito Hirano (MELCO) MW2010-17 |
This paper reports on GaN HEMT (Gallium Nitride High Electron Mobility Transistor) HIC (Hybrid Integrated Circuit) high ... [more] | MW2010-17 pp.17-22 |
| OPE, EMT, MW | 2009-07-31 09:50 |
Hokkaido | Asahikawa Civic Culture Hall | C-Ku band 120% relative bandwidth high efficiency high power amplifier using GaN HEMT Eigo Kuwata, Koji Yamanaka, Tasuku Kirikoshi, Akira Inoue, Yoshihito Hirano (Mitsubishi electric corp) MW2009-68 OPE2009-68 |
This paper reports on GaN HEMT (Gallium Nitride High Electron Mobility Transistor) HIC (Hybrid Integrated Circuit) high ... [more] | MW2009-68 OPE2009-68 pp.205-209 |
| MW, ED | 2009-01-14 14:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg | design of broadband amplifier with consideration of output capacitance Eigo Kuwata, Koji Yamanaka, Tasuku Kirikoshi, Akira Inoue, Moriyasu Miyazaki (Mitsubishi Electric Co.) ED2008-200 MW2008-165 |
Recently, broadband amplifiers have become more important for ultra-wideband (UWB) radio communication systems and multi... [more] | ED2008-200 MW2008-165 pp.11-15 |
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