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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2014-11-06
11:20
Tokyo Kikai-Shinko-Kaikan Bldg. Spice Model of SiC Power MOSFET (DioMOS) -- Modeling Methodology for Reverse Current-voltage Characteristics of SiC --
Tetsuya Yamamoto, Tetsuro Sawai, Nobuyuki Horikawa, Yoshihiko Kanzawa, Kenji Mizutani, Nobuyuki Otsuka, Eiji Fujii (Panasonic) SDM2014-99
This paper presents a novel methodology to design a compact but precise SPICE model which reproduces complete current-vo... [more] SDM2014-99
pp.19-24
MBE, NC
(Joint)
2012-03-15
10:40
Tokyo Tamagawa University Demonstration of the STDP function in a ferroelectric-gate field-effect transistor-based synaptic device
Yu Nishitani, Yukihiro Kaneko, Michihito Ueda (Panasonic), Takashi Morie (Kyushu Inst. of Tech.), Eiji Fujii (Panasonic) NC2011-156
 [more] NC2011-156
pp.203-207
ICD 2005-04-15
11:00
Fukuoka   High Density and Low Power Nonvolatile FeRAM Memory Cell Architecture
Takashi Miki, Hiroshige Hirano, Masahiko Sakagami, Tetsuji Nakakuma, Kunisato Yamaoka, Shunichi Iwanari, Yasuo Murakuki, Yasushi Gohou, Eiji Fujii (Matsushita Electric Industrial Co., Ltd.)
 [more] ICD2005-14
pp.7-12
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