|
|
All Technical Committee Conferences (Searched in: All Years)
|
|
Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
|
Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2012-03-05 13:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Initial Growth Observation of Multilayer Graphene on SiO2/Si substrate using Raman Spectroscopy and XPS Yoshihiro Ojiro, Shuichi Ogawa (Tohoku Univ.), Manabu Inukai (JASRI), Motonobu Sato (AIST), Eiji Ikenaga, Takayuki Muro (JASRI), Mizuhisa Nihei (AIST), Yuji Takakuwa (Tohoku Univ.), Naoki Yokoyama (AIST) SDM2011-179 |
The photoemission-assisted Plasma enhanced CVD is the one of the most possible method to grow graphene in the low temper... [more] |
SDM2011-179 pp.19-24 |
SDM |
2011-02-07 14:10 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Networked-Nanographite Wire Grown by Metal-Photoemission-assisted Plasma-enhanced CVD without Catalysts Motonobu Sato (Fujitsu Ltd./JST/AIST), Shuichi Ogawa (Tohoku Univ./JST), Eiji Ikenaga (JASRI/JST), Yuji Takakuwa (Tohoku Univ./JST), Mizuhisa Nihei (Fujitsu Ltd./JST/AIST), Naoki Yokoyama (AIST) SDM2010-222 |
Carbon-based materials, such as carbon nanotubes and graphene nanoribbons, have been studied as interconnect materials b... [more] |
SDM2010-222 pp.37-42 |
SDM, ED |
2009-06-25 12:00 |
Overseas |
Haeundae Grand Hotel, Busan, Korea |
Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy Tomoyuki Suwa (Tohoku Univ.), Takashi Aratani (Shin-Etsu Chemical), Masaaki Higuchi (TOSHIBA), Sigetoshi Sugawa (Tohoku Univ.), Eiji Ikenaga (JASRI), Jiro Ushio (Hitachi), Hiroshi Nohira (Musashi Inst. of Tech.), Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.) ED2009-86 SDM2009-81 |
[more] |
ED2009-86 SDM2009-81 pp.157-160 |
SDM |
2008-10-10 16:15 |
Miyagi |
Tohoku Univ. |
Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy Tomoyuki Suwa (Tohoku Univ.), Takashi Aratani (Shin-Etsu Chemi.), Masaaki Higuchi (Toshiba), Shigetoshi Sugawa (Tohoku Univ.), Eiji Ikenaga (JASRI), Jiro Ushio (Hitachi), Hiroshi Nohira (Musashi Inst. of Tech.), Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.) SDM2008-167 |
Soft x-ray-excited angle-resolved photoemission results for nitride films formed using nitrogen-hydrogen radicals on Si(... [more] |
SDM2008-167 pp.69-74 |
SDM |
2007-06-08 09:00 |
Hiroshima |
Hiroshima Univ. ( Faculty Club) |
Study on subnitride and valence band offset at Si3N4 / Si interface formed using nitrogen radicals Akinobu Teramoto, Takashi Aratani, Masaaki Higuchi (Tohoku Univ.), Eiji Ikenaga (JASRI), Hiroshi Nohira (Musashi Institute of Technology), Shigetoshi Sugawa, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.) SDM2007-39 |
An area density of subnitride and a valence band offset in Si3N4 films formed on Si(100), (111), (110) surface by microw... [more] |
SDM2007-39 pp.43-48 |
SDM |
2006-06-22 09:50 |
Hiroshima |
Faculty Club, Hiroshima Univ. |
The dependence of the intermediate nitridation states density at Si3N4/Si interface on surface Si atoms density Masaaki Higuchi (Tohoku Univ.), Seiji Shinagawa (Musashi Inst. of Tech.), Akinobu Teramoto (Tohoku Univ.), Hiroshi Nohira (Musashi Inst. of Tech.), Takeo Hattori (Tohoku Univ./Musashi Inst. of Tech.), Eiji Ikenaga (JASRI), Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) |
[more] |
SDM2006-54 pp.71-76 |
|
|
|
Copyright and reproduction :
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
|
[Return to Top Page]
[Return to IEICE Web Page]
|