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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 6 of 6  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2012-03-05
13:00
Tokyo Kikai-Shinko-Kaikan Bldg. Initial Growth Observation of Multilayer Graphene on SiO2/Si substrate using Raman Spectroscopy and XPS
Yoshihiro Ojiro, Shuichi Ogawa (Tohoku Univ.), Manabu Inukai (JASRI), Motonobu Sato (AIST), Eiji Ikenaga, Takayuki Muro (JASRI), Mizuhisa Nihei (AIST), Yuji Takakuwa (Tohoku Univ.), Naoki Yokoyama (AIST) SDM2011-179
The photoemission-assisted Plasma enhanced CVD is the one of the most possible method to grow graphene in the low temper... [more] SDM2011-179
pp.19-24
SDM 2011-02-07
14:10
Tokyo Kikai-Shinko-Kaikan Bldg. Networked-Nanographite Wire Grown by Metal-Photoemission-assisted Plasma-enhanced CVD without Catalysts
Motonobu Sato (Fujitsu Ltd./JST/AIST), Shuichi Ogawa (Tohoku Univ./JST), Eiji Ikenaga (JASRI/JST), Yuji Takakuwa (Tohoku Univ./JST), Mizuhisa Nihei (Fujitsu Ltd./JST/AIST), Naoki Yokoyama (AIST) SDM2010-222
Carbon-based materials, such as carbon nanotubes and graphene nanoribbons, have been studied as interconnect materials b... [more] SDM2010-222
pp.37-42
SDM, ED 2009-06-25
12:00
Overseas Haeundae Grand Hotel, Busan, Korea Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy
Tomoyuki Suwa (Tohoku Univ.), Takashi Aratani (Shin-Etsu Chemical), Masaaki Higuchi (TOSHIBA), Sigetoshi Sugawa (Tohoku Univ.), Eiji Ikenaga (JASRI), Jiro Ushio (Hitachi), Hiroshi Nohira (Musashi Inst. of Tech.), Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.) ED2009-86 SDM2009-81
 [more] ED2009-86 SDM2009-81
pp.157-160
SDM 2008-10-10
16:15
Miyagi Tohoku Univ. Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy
Tomoyuki Suwa (Tohoku Univ.), Takashi Aratani (Shin-Etsu Chemi.), Masaaki Higuchi (Toshiba), Shigetoshi Sugawa (Tohoku Univ.), Eiji Ikenaga (JASRI), Jiro Ushio (Hitachi), Hiroshi Nohira (Musashi Inst. of Tech.), Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.) SDM2008-167
Soft x-ray-excited angle-resolved photoemission results for nitride films formed using nitrogen-hydrogen radicals on Si(... [more] SDM2008-167
pp.69-74
SDM 2007-06-08
09:00
Hiroshima Hiroshima Univ. ( Faculty Club) Study on subnitride and valence band offset at Si3N4 / Si interface formed using nitrogen radicals
Akinobu Teramoto, Takashi Aratani, Masaaki Higuchi (Tohoku Univ.), Eiji Ikenaga (JASRI), Hiroshi Nohira (Musashi Institute of Technology), Shigetoshi Sugawa, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.) SDM2007-39
An area density of subnitride and a valence band offset in Si3N4 films formed on Si(100), (111), (110) surface by microw... [more] SDM2007-39
pp.43-48
SDM 2006-06-22
09:50
Hiroshima Faculty Club, Hiroshima Univ. The dependence of the intermediate nitridation states density at Si3N4/Si interface on surface Si atoms density
Masaaki Higuchi (Tohoku Univ.), Seiji Shinagawa (Musashi Inst. of Tech.), Akinobu Teramoto (Tohoku Univ.), Hiroshi Nohira (Musashi Inst. of Tech.), Takeo Hattori (Tohoku Univ./Musashi Inst. of Tech.), Eiji Ikenaga (JASRI), Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.)
 [more] SDM2006-54
pp.71-76
 Results 1 - 6 of 6  /   
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