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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 12 of 12  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, LQE, CPM 2015-11-27
Osaka Osaka City University Media Center Behavior of Plasma-induced Defects in GaN -- Comparison between n- and p type GaN --
Yusuke Koga, Seiji Nakamura, Tsugunori Okumura (TMU)
ET 2012-07-28
Miyagi Tohoku Gakuin Univ. An upgraded class management system using electronic shelf labels
Syota Ito (AIT), Tsukasa Taguchi, Yoichiro Abe, Daisaku Souma (ISHIDA), Takaaki Hishida, Masanobu Sakamoto, Eiji Nakamura (AIT) ET2012-24
Electronic shelf labels or ESLs, controlled individually via infrared communication channels, can provide instructors wi... [more] ET2012-24
ET 2012-03-10
Kagawa   An Electronic Shelf Label Based Classroom Management System Utilizing Facial Information
Kyousuke Oka, Akihisa Matsunaga, Takaaki Hishida, Masanobu Sakamoto, Eiji Nakamura (AIT) ET2011-121
Electronic shelf lables or ESLs are a super energy saving display device able to function by button cells for a period o... [more] ET2011-121
ED 2010-09-13
Fukuoka Kyushu Institute of Technology(Wakamatsu) Hydrogen response mechanisms of Pd/AlGaN/GaN HEMT-based sensors
Takuma Takimoto, Seiji Nakamura, Tsugunori Okumura (Tokyo Metropolitan Univ.)
ED 2009-06-11
Tokyo   Electrical characterization of plasma-induced defects in GaN
Seiji Nakamura, Koichi Hoshino, Shunsuke Ochiai, Michihiko Suhara, Tsugunori Okumura (Tokyo Metro Univ.) ED2009-40
 [more] ED2009-40
LQE, ED, CPM 2008-11-28
Aichi Nagoya Institute of Technology Simulation of Bending Deformation and Two-dimensional Electron Gas Density in AlGaN/GaN Hetero Structure
Hajime Tsukahara, Seiji Nakamura, Tsugunori Okumura (Tokyo Metropolitan univ.) ED2008-182 CPM2008-131 LQE2008-126
We have examined the effect on a two-dimensional electron gas(2DEG) in AlGaN/GaN hetero structures by using the “micro-o... [more] ED2008-182 CPM2008-131 LQE2008-126
LQE, ED, CPM 2008-11-28
Aichi Nagoya Institute of Technology Detection mechanisms of Pd/AlGaN/GaN HEMT-based hydrogen gas sensors
Noriyuki Takahashi, Seiji Nakamura, Tsugunori Okumura (Tokyo Metropolitan Univ) ED2008-183 CPM2008-132 LQE2008-127
The hydrogen sensing properties of AlGaN/GaN high electron mobility transistors with Pd gate electrodes are demonstrated... [more] ED2008-183 CPM2008-132 LQE2008-127
PRMU 2007-03-15
Okayama   Development of an EMD based analogue motion detection sensor
Takumi Hattori, Eiji Nakamura, Katsutoshi Sawada (AIT)
The so called elementary motion detector or EMD is a computational model describing visual signal processing activities ... [more] PRMU2006-241
PRMU 2006-03-17
Fukuoka Kyushu Univ. Examination of EMD Parameter Optimization
Tomoko Takahashi, Shingo Asami, Eiji Nakamura, Katsutoshi Sawada (AIT)
(To be available after the conference date) [more] PRMU2005-265
PRMU 2006-03-17
Fukuoka Kyushu Univ. Super low resolution motion detection sensing device
Masato Imagawa, Eiji Nakamura, Katsutoshi Sawada (AIT)
This technical report presents a super low resolution imaging system dedicated for object motion detection.
An imaging ... [more]
R, ED, SDM 2005-11-25
Osaka Central Electric Club Electrical characterization of n-GaN exposed to hydrogen plasma
Masayuki Suda, Seiji Nakamura, Michihiko Suhara, Tsugunori Okumura (Tokyo Metropolitan Univ.)
We have studied the electrical characteristics of n-GaN exposed to plasma. In the case of hydrogen plasma, the decrease ... [more] R2005-45 ED2005-180 SDM2005-199
PRMU, NLC 2005-09-22
Tokyo   Development of imaging sensor to detect translational and rotational motion
Chikara Takahashi, Eiji Nakamura, Katsutoshi Sawada (AIT)
This technical report presents an algorithm and its imaging sensor system that can estimate rotational
and translationa... [more]
NLC2005-54 PRMU2005-81
 Results 1 - 12 of 12  /   
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