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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 4 of 4  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2020-02-07
09:35		 Tokyo Tokyo University-Hongo [Invited Talk] Impact of Homogeneously Dispersed Al Nanoclusters by Si-monolayer Insertion into Hf0.5Zr0.5O2 Film on FeFET Memory Array with Tight Threshold Voltage Distribution
Tadashi Yamaguchi, Keiichi Maekawa, Takahiro Ohara, Atsushi Amo, Eiji Tsukuda, Kenichiro Sonoda, Hiroshi Yanagita, Masao Inoue, Masazumi Matsuura, Tomohiro Yamashita (Renesas) SDM2019-89		  [more] SDM2019-89
pp.5-8
SDM 2013-11-14
14:15		 Tokyo Kikai-Shinko-Kaikan Bldg. The effect of incorporated elements in nitrogen vacancies on electron trap level in silicon nitride
Kenichiro Sonoda, Eiji Tsukuda, Motoaki Tanizawa, Kiyoshi Ishikawa, Yasuo Yamaguchi (Renesas Electronics) SDM2013-103		  [more] SDM2013-103
pp.21-26
SDM, VLD 2007-10-30
15:00		 Tokyo Kikai-Shinko-Kaikan Bldg. Impact of Shear Strain and Quantum Confinement on <110> Channel nMOSFET with High-Stress CESL
Hiroyuki Takashino, Takeshi Okagaki, Tetsuya Uchida, Takashi Hayashi, Motoaki Tanizawa, Eiji Tsukuda, Katsumi Eikyu, Shoji Wakahara, Kiyoshi Ishikawa, Osamu Tsuchiya, Yasuo Inoue (Renesas Technology Corp.) VLD2007-57 SDM2007-201		 Numerical study in conjunction with comprehensive bending
experiments has demonstrated that \orientation{100}-Si has th... [more]		 VLD2007-57 SDM2007-201
pp.33-36
SDM, VLD 2007-10-30
15:50		 Tokyo Kikai-Shinko-Kaikan Bldg. Validation of the Effect of Full Stress Tensor in HoleTransport in Strained 65nm-node pMOSFETs
Eiji Tsukuda (Renesas), Yoshinari Kamakura (Osaka Univ.), Hiroyuki Takashino, Takeshi Okagaki, Tetsuya Uchida, Takashi Hayashi, Motoaki Tanizawa, Katsumi Eikyu, Shoji Wakahara, Kiyoshi Ishikawa, Osamu Tsuchiya, Yasuo Inoue (Renesas), Kenji Taniguchi (Osaka Univ.) VLD2007-59 SDM2007-203		 We have developed a system consisting of a full-3D process simulator for stress calculation and k&#183;pband calculation... [more] VLD2007-59 SDM2007-203
pp.43-46
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