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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| WPT, EE (Joint) |
2020-10-07 13:40 |
Online | Online | Electrical Characteristics of Gated-Anode Diode for Rectenna Using Normally-Off GaN HEMT Hidemasa Takahashi, Yuji Ando (Nagoya Univ.), Yoichi Tsuchiya, Akio Wakejima (NITECH), Hiroaki Hayashi, Eiji Yagyu (Mitsubishi Electric), Koichi Kikkawa, Naoki Sakai, Kenji Itoh (Kanazawa Institute of Tech), Jun Suda (Nagoya Univ.)  WPT2020-19 |
As a device for wireless power transmission, we are developing a new rectenna that uses a gated anode diode (GAD) that s... [more] | WPT2020-19 pp.1-5 |
| ED, MW | 2020-01-31 11:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | GaN-on-Diamond HEMTs fabricated by Surface-Activated Room-Temperature Bonding Shuichi Hiza (Mitsubishi Electric), Masahiro Fujikawa (Mitsubishi Elctric), Yuki Takiguchi, Kunihiko Nishimura, Eiji Yagyu (Mitsubishi Electric), Takashi Matsumae, Yuichi Kurashima, Hideki Takagi (AIST), Mikio Yamamuka (Mitsubishi Electric) ED2019-97 MW2019-131 |
[more] | ED2019-97 MW2019-131 pp.21-24 |
| LQE | 2018-02-23 12:45 |
Kanagawa | [Invited Talk]
Development of AlInAs APD in Optical Communications System
-- Guardring-free Planar AlInAs APD -- Eiji Yagyu (Mitsubishi Electric) LQE2017-153 |
AlInAs APDs have superior performance than InP APDs in principle. We make an AlInAs avalanche photodiode (APD) practicab... [more] | LQE2017-153 pp.11-14 |
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| OFT, OPE, OCS (Joint) [detail] |
2013-03-01 10:50 |
Tokyo | An MMI-based Polarization Splitter Using Patterned Metal and Angled Joint Keisuke Kojima (MERL), Satoshi Nishikawa, Eiji Yagyu (Mitsubishi), Wangqing Yuan, Bingnan Wang, Toshiaki Koike-Akino, Kieran Parsons (MERL) OCS2012-106 OFT2012-82 OPE2012-200 |
We have proposed a polarization beam splitter consisting of MMI with angled joint and metal layer made on an InP substra... [more] | OCS2012-106 OFT2012-82 OPE2012-200 pp.51-55(OCS), pp.71-75(OFT), pp.71-75(OPE) |
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| ED, LQE, CPM | 2009-11-20 13:10 |
Tokushima | Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) | Aluminum-Free Ohmic contact on Si implanted nitride semiconductors Akifumi Imai, Takuma Nanjo, Muneyoshi Suita, Yuji Abe, Eiji Yagyu, Tetsuyuki Kurata (Mitsubishi Electric Corp.) ED2009-153 CPM2009-127 LQE2009-132 |
[more] | ED2009-153 CPM2009-127 LQE2009-132 pp.119-123 |
| LQE, CPM, EMD, OPE | 2008-08-29 10:55 |
Miyagi | Touhoku Univ. | The guardring-free InAlAs Avalanche Photodiodes for optical communication Masaharu Nakaji, Eitaro Ishimura, Eiji Yagyu, Yohei Mikami, Susumu Ihara, Toshitaka Aoyagi, Kiichi Yoshiara, Takahide Ishikawa (Mitsubishi electric corp.) EMD2008-49 CPM2008-64 OPE2008-79 LQE2008-48 |
We present a guardring-free InAlAs APD, which achieves low noise and high reliability. The InAlAs APDs produced sensitiv... [more] | EMD2008-49 CPM2008-64 OPE2008-79 LQE2008-48 pp.89-92 |
| LQE, OPE, OCS | 2007-11-01 10:50 |
Fukuoka | Highly reliable guardring-free planar InAlAs avalanche photodiode Eitaro Ishimura, Eiji Yagyu, Masaharu Nakaji, Susumu Ihara, Kiichi Yoshiara, Toshitaka Aoyagi, Yasunori Tokuda, Takahide Ishikawa (Mitsubishi Electric Corp.) OCS2007-43 OPE2007-98 LQE2007-84 |
he InAlAs avalanche photodiode with a guardring-free structure that reduces the bias voltage of the pn-junction of top s... [more] | OCS2007-43 OPE2007-98 LQE2007-84 pp.19-22 |
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