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Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE 2012-12-13
09:35		 Tokyo Kikai-Shinko-Kaikan Bldg. Gain characterization of 19-stacked InGaAs/GaAs quantum dot laser diode fabricated by ultrahigh rate MBE growth technique
Fumihiko Tanoue, Hiroharu Sugawara (Tokyo Metropolitan Univ.), Kouichi Akahane, Naokatsu Yamamoto (NICT) LQE2012-121		 19-stacked InGaAs quantum dot (QD) laser diode was fabricated by using ultrahigh-rate molecular beam epitaxial (MBE) gro... [more] LQE2012-121
pp.1-4
CPM, OPE, LQE, EMD 2011-08-26
13:55		 Hokkaido Hokkaido Univ. Fabrication of highly stacked InGaAs/GaAs quantum dot laser diode for 1-um photonic waveband with ultrahigh rate MBE growth technique
Fumihiko Tanoue, Hiroharu Sugawara (TMU), Kouichi Akahane, Naokatsu Yamamoto (NICT) EMD2011-54 CPM2011-98 OPE2011-89 LQE2011-52		  [more] EMD2011-54 CPM2011-98 OPE2011-89 LQE2011-52
pp.113-116
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