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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| LQE, ED, CPM | 2023-11-30 14:55 |
Shizuoka | Two-dimensional characterization of Au/Ni/thin heavily-Mg-doped p-GaN/n-GaN Schottky contacts under applied voltage by scanning internal photoemission microscopy Haruto Yoshimura, Hiroki Imabayashi (Fukui univ.), Fumimasa Horikiri, Yoshinobu Narita, Hajime Fujikura (Sumitomo Chem.), Hiroshi Ohta, Tomoyoshi Mishima (Hosei Univ.), Kenji Shiojima (Fukui univ.)  ED2023-18 CPM2023-60 LQE2023-58 |
We applied scanning internal photoemission microscopy (SIPM) method to clarify the two-dimensional basic characteristics... [more] | ED2023-18 CPM2023-60 LQE2023-58 pp.21-24 |
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| CPM, ED, LQE | 2022-11-24 14:15 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
Two-dimensional characterization of the edge structure of Ni/n-GaN Schottky contacts under applied voltage by scanning internal photoemission microscopy Hiroki Imabayashi (Univ. of Fukui), Fumimasa Horikiri, Yoshinobu Narita, Noboru Fukuhara (Sumitomo Chemical Co, Ltd.), Tomoyoshi Mishima (Hosei Univ.), Kenji Shiojima (Univ. of Fukui) ED2022-33 CPM2022-58 LQE2022-66 |
[more] | ED2022-33 CPM2022-58 LQE2022-66 pp.45-48 |
| ED, CPM, LQE | 2021-11-26 13:25 |
Online | Online | Uniformity characterization of SiC, GaN, α-Ga₂O₃ Schottky contacts using scanning internal photoemission microscopy Yuto Kawasumi (Univ. of Fukui), Fumimasa Horikiri, Noboru Fukuhara (SCIOCS Co.), Tomoyoshi Mishima (Hosei Univ.), Takashi Shinohe (FLOSFIA INC.), Kenji Shiojima (Univ. of Fukui) ED2021-29 CPM2021-63 LQE2021-41 |
Uniformity characterization of Ni/SiC, Ni/GaN, and Cu/Ti/$alpha$-Ga2O3 Schottky contacts was performed by scanning inter... [more] | ED2021-29 CPM2021-63 LQE2021-41 pp.67-70 |
| ED, CPM, LQE | 2021-11-26 16:00 |
Online | Online | Fabrication of Recessed-gate AlGaN/GaN HEMTs using Low-damage Contactless Photo-Electrochemical Etching Masachika Toguchi, Kazuki Miwa (Hokkaido Univ.), Fumimasa Horikiri, Noboru Fukuhara, Yoshinobu Narita, Osamu Ichikawa, Ryota Isono, Takeshi Tanaka (SCIOCS), Taketomo Sato (Hokkaido Univ.) ED2021-34 CPM2021-68 LQE2021-46 |
(To be available after the conference date) [more] | ED2021-34 CPM2021-68 LQE2021-46 pp.87-90 |
| LQE, CPM, ED | 2020-11-26 14:10 |
Online | Online | Mapping of Photoelectrochemical Etched Ni/GaN Schottky Contacts Using Scanning Internal Photoemission Microscopy
-- Comparison between n- and p-type GaN samples -- Ryo Matsuda (Univ. of Fukui), Fumimasa Horikiri, Yoshinobu Narita, Takehiro Yoshida, Noboru Fukuhara (SCIOCS), Tomoyoshi Mishima (Hosei Univ.), Kenji Shiojima (Univ. of Fukui) ED2020-9 CPM2020-30 LQE2020-60 |
[more] | ED2020-9 CPM2020-30 LQE2020-60 pp.33-36 |
| ED, MW | 2020-01-31 11:45 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Simple Photoelectrochemical Etching for Recess Gate GaN HEMT Fumimasa Horikiri, Noboru Fukuhara (SCIOCS), Masachika Toguchi, Kazuki Miwa (Hokaido Univ.), Yoshinobu Narita, Osamu Ichikawa, Ryota Isono, Takeshi Tanaka (SCIOCS), Taketomo Sato (Hokaido Univ.) ED2019-98 MW2019-132 |
Photoelectrochemical (PEC) etching is a promising technology for fabricating GaN devices with low damage. In the simple ... [more] | ED2019-98 MW2019-132 pp.25-28 |
| ED, CPM, SDM | 2018-05-24 15:25 |
Aichi | Toyohashi Univ. of Tech. (VBL) | The characterization of GaN homo-epitaxial layers grown on GaN substrates by using FT-IR Fumimasa Horikiri, Yoshinobu Narita, Takehiro Yoshida (Sciocs) ED2018-18 CPM2018-5 SDM2018-13 |
The film thickness of homo epitaxial layers on freestanding GaN substrate was characterized by using Fourier transform ... [more] | ED2018-18 CPM2018-5 SDM2018-13 pp.19-22 |
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