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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, MWPTHz 2023-12-22
Miyagi RIEC, Tohoku Univ.
(Primary: On-site, Secondary: Online)
MOCVD growth and device characteristics of N-polar GaN HEMT with high-resistivity C-doped GaN buffer
Yuki Yoshiya, Takuya Hoshi, Takuya Tsutsumi, Hiroki Sugiyama, Fumito Nakajima (NTT) ED2023-63 MWPTHz2023-73
MOCVD-grown N-polar GaN HEMTs with high-resistivity carbon-doped GaN buffer were fabricated. Carbon auto doping in buffe... [more] ED2023-63 MWPTHz2023-73
ED, MWPTHz 2022-12-19
Miyagi   [Invited Talk] InP-HEMT Fabrication Process Technology for Beyond 5G Wireless Network with Tera-Hertz Band
Takuya Tsutsumi, Hiroshi Hamada, Teruo Jyo, Hiroki Sugiyama, Taro Sasaki, Hiroyuki Takahashi, Fumito Nakajima (NTT) ED2022-76 MWPTHz2022-47
Next-generation "Beyond 5G (B5G) / 6G" wireless network systems have been researched and developed for meeting with rapi... [more] ED2022-76 MWPTHz2022-47
ED, MWPTHz 2022-12-19
Miyagi   Evaluation of InP-HEMTs with In0.8Ga0.2As/InAs composite channel for terahertz applications
Taro Sasaki, Takuya Tsutsumi, Hiroki Sugiyama, Fumito Nakajima (NTT) ED2022-77 MWPTHz2022-48
Terahertz ICs have been attracting much attention due to its potential use of next generation wireless communications, s... [more] ED2022-77 MWPTHz2022-48
R, LQE, OPE, CPM, EMD 2020-08-28
Online Online [Invited Talk] High-speed and high-sensitivity avalanche photodiode with vertical illumination structure for extending100-Gbit/s PAM4 transmission distance
Shoko Tatsumi, Masahiro Nada, Toshihide Yoshimatsu, Atsushi Kanda, Yasuhiko Nakanishi, Fumito Nakajima, Hideaki Matsuzaki, Kimikazu Sano (NTT) R2020-14 EMD2020-13 CPM2020-6 OPE2020-26 LQE2020-6
 [more] R2020-14 EMD2020-13 CPM2020-6 OPE2020-26 LQE2020-6
LQE, OPE, OCS 2007-11-01
Fukuoka   High-speed, high-efficient photodiode with p-InGaAs/i-InGaAs absorption layers
Yoshifumi Muramoto, Toshihide Yoshimatsu, Satoshi Kodama, Fumito Nakajima, Tomofumi Furuta, Hiroshi Ito (NTT) OCS2007-44 OPE2007-99 LQE2007-85
We proposed a new design principle for a photodiode structure that has a depleted InGaAs absorption layer combined with ... [more] OCS2007-44 OPE2007-99 LQE2007-85
 Results 1 - 5 of 5  /   
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