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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, SDM, CPM 2012-05-17
13:40		 Aichi VBL, Toyohashi Univ. of Technol. Improvement in crystalline quality of GaAsN alloy by high temperature growth
Futoshi Fukami, Noriyuki Urakami, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Univ. Tech.) ED2012-18 CPM2012-2 SDM2012-20		 GaAsN alloys are one of the attractive candidates for the active layers of the luminescence devices on Si. Compared with... [more] ED2012-18 CPM2012-2 SDM2012-20
pp.7-10
CPM, SDM, ED 2011-05-19
14:15		 Aichi Nagoya Univ. (VBL) Molecular beam epitaxy growth of BGaP
Noriyuki Urakami, Futoshi Fukami, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Univ. Tech.) ED2011-11 CPM2011-18 SDM2011-24		 Growth properties of dilute BGaP layers have been investigated by molecular beam epitaxy for strain compensation layers ... [more] ED2011-11 CPM2011-18 SDM2011-24
pp.55-58
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