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All Technical Committee Conferences (Searched in: All Years)
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| Search Results: Conference Papers |
| Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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| Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
| ED, SDM |
2010-06-30
14:25 |
Tokyo |
Tokyo Inst. of Tech. Ookayama Campus |
A New Cone-Type 1T DRAM Cell
Gil Sung Lee, Doo-Hyun Kim, Jang-Gn Yun, Jung Hoon Lee, Yoon Kim, Jong-Ho Lee, Hyungcheol Shin, Byung-Gook Park (Seoul National Univ.)  ED2010-55 SDM2010-56 |
[more] |
ED2010-55 SDM2010-56
pp.23-25 |
| ED, SDM |
2010-06-30
15:10 |
Tokyo |
Tokyo Inst. of Tech. Ookayama Campus |
Threshold Voltage Roll-off Mechanisms in SONOS Flash Memory in Retention Mode Including Trapped Charge Redistribution Effect
Doo-Hyun Kim, Gil Sung Lee, Seongjae Cho, Jung Hoon Lee, Jang-Gn Yun, Dong Hua Li, Yoon Kim, Se Hwan Park, Won Bo Shim, Wandong Kim, Byung-Gook Park (Seoul National Univ.) ED2010-58 SDM2010-59 |
[more] |
ED2010-58 SDM2010-59
pp.37-40 |
| ED, SDM |
2010-07-02
15:35 |
Tokyo |
Tokyo Inst. of Tech. Ookayama Campus |
Independent Gate Twin-bit SONOS Flash Memory with Split-gate Effect
Yoon Kim, Jang-Gn Yun, Jung Hoon Lee, Gil Sung Lee, Se Hwan Park, Jong-Ho Lee, Hyungcheol Shin, Byung-Gook Park (Seoul National Univ.) ED2010-99 SDM2010-100 |
[more] |
ED2010-99 SDM2010-100
pp.217-220 |
| SDM, ED |
2009-06-26
10:00 |
Overseas |
Haeundae Grand Hotel, Busan, Korea |
Multi-level reading method by using PCI(Paierd Cell Interference) in vertical NAND flash memory.
Yoon Kim, Seongjae Cho, Jang-Gn Yun, Il Han Park, Gil Sung Lee, Doo-Hyun Kim, Dong Hua Li, Se Hwan Park, Wandong Kim, Wonbo Shim, Byung-Gook Park (Seoul National Univ.) ED2009-96 SDM2009-91 |
[more] |
ED2009-96 SDM2009-91
pp.197-200 |
| SDM, ED |
2008-07-10
10:15 |
Hokkaido |
Kaderu２・７ |
Design of Vertical Nonvolatile Memory Device Considering Gate-Induced Barrier Lowering(GIBL)
Seongjae Cho, Il Han Park, Jung Hoon Lee, Gil Sung Lee, Jong Duk Lee, Hyungcheol Shin, Byung-Gook Park (Seoul National Univ.) ED2008-58 SDM2008-77 |
Recently, various 3-D nonvolatile memory (NVM) devices have been researched for improving the degree of integration. NVM... [more] |
ED2008-58 SDM2008-77
pp.95-99 |
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