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SDM 2009-06-19
14:10		 Tokyo An401・402 Inst. Indus. Sci., The Univ. of Tokyo Electrical Characterization of High-k Gate Dielectrics on Ge with HfGeN and GeO2 Interlayers -- Formation of Insulator on Ge Substrate --
Hiroshi Nakashima, Kana Hirayama, Haigui Yang, Dong Wang (Kyushu Univ.) SDM2009-35		 We are searching MIS structure with good interface and insulating properties for high mobility Ge channel. Our approach... [more] SDM2009-35
pp.51-56
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