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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
LQE, ED, CPM |
2023-11-30 14:55 |
Shizuoka |
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Two-dimensional characterization of Au/Ni/thin heavily-Mg-doped p-GaN/n-GaN Schottky contacts under applied voltage by scanning internal photoemission microscopy Haruto Yoshimura, Hiroki Imabayashi (Fukui univ.), Fumimasa Horikiri, Yoshinobu Narita, Hajime Fujikura (Sumitomo Chem.), Hiroshi Ohta, Tomoyoshi Mishima (Hosei Univ.), Kenji Shiojima (Fukui univ.) ED2023-18 CPM2023-60 LQE2023-58 |
We applied scanning internal photoemission microscopy (SIPM) method to clarify the two-dimensional basic characteristics... [more] |
ED2023-18 CPM2023-60 LQE2023-58 pp.21-24 |
ED, CPM, LQE |
2021-11-25 14:35 |
Online |
Online |
Photoluminescence study of high-purity GaN homoepitaxial layers grown by hydride vapor phase epitaxy Hiroto Imashiro, Ryo Yamahida, Hironao Kanamori, Ryuichi Watanabe (KIT), Takeshi Kimura, Taichiro Konno, Hajime Fujikura (SCIOCS), Atsushi A. Yamaguchi (KIT) ED2021-22 CPM2021-56 LQE2021-34 |
The fundamental material properties of GaN and its related materials have not been fully understood. One of the reasons ... [more] |
ED2021-22 CPM2021-56 LQE2021-34 pp.37-40 |
LQE, ED, CPM |
2011-11-17 12:55 |
Kyoto |
Katsura Hall,Kyoto Univ. |
Realization of Freestanding GaN Substrates with High Surface Quality and Low Dislocation Density by Crystal Hardness Control Hajime Fujikura, Yuichi Oshima, Takehiro Yoshida, Takeshi Megro, Toshiya Saito (Hitachi Cable) ED2011-77 CPM2011-126 LQE2011-100 |
In the growth of freestanding GaN substrates using our void-assisted separation (VAS) method, we have effectively suppre... [more] |
ED2011-77 CPM2011-126 LQE2011-100 pp.19-24 |
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