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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE, ED, CPM 2023-11-30
14:55
Shizuoka   Two-dimensional characterization of Au/Ni/thin heavily-Mg-doped p-GaN/n-GaN Schottky contacts under applied voltage by scanning internal photoemission microscopy
Haruto Yoshimura, Hiroki Imabayashi (Fukui univ.), Fumimasa Horikiri, Yoshinobu Narita, Hajime Fujikura (Sumitomo Chem.), Hiroshi Ohta, Tomoyoshi Mishima (Hosei Univ.), Kenji Shiojima (Fukui univ.) ED2023-18 CPM2023-60 LQE2023-58
We applied scanning internal photoemission microscopy (SIPM) method to clarify the two-dimensional basic characteristics... [more] ED2023-18 CPM2023-60 LQE2023-58
pp.21-24
ED, CPM, LQE 2021-11-25
14:35
Online Online Photoluminescence study of high-purity GaN homoepitaxial layers grown by hydride vapor phase epitaxy
Hiroto Imashiro, Ryo Yamahida, Hironao Kanamori, Ryuichi Watanabe (KIT), Takeshi Kimura, Taichiro Konno, Hajime Fujikura (SCIOCS), Atsushi A. Yamaguchi (KIT) ED2021-22 CPM2021-56 LQE2021-34
The fundamental material properties of GaN and its related materials have not been fully understood. One of the reasons ... [more] ED2021-22 CPM2021-56 LQE2021-34
pp.37-40
LQE, ED, CPM 2011-11-17
12:55
Kyoto Katsura Hall,Kyoto Univ. Realization of Freestanding GaN Substrates with High Surface Quality and Low Dislocation Density by Crystal Hardness Control
Hajime Fujikura, Yuichi Oshima, Takehiro Yoshida, Takeshi Megro, Toshiya Saito (Hitachi Cable) ED2011-77 CPM2011-126 LQE2011-100
In the growth of freestanding GaN substrates using our void-assisted separation (VAS) method, we have effectively suppre... [more] ED2011-77 CPM2011-126 LQE2011-100
pp.19-24
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