IEICE Technical Committee Submission System
Conference Schedule		 Online Proceedings
[Sign in]
Tech. Rep. Archives
    [Japanese] / [English] 
( Committee/Place/Topics  ) --Press->
 
( Paper Keywords:  /  Column:Title Auth. Affi. Abst. Keyword ) --Press->

All Technical Committee Conferences  (Searched in: All Years)

Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 12 of 12  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE, OPE, EMD, R, CPM 2016-08-25
14:25		 Hokkaido   [Invited Talk] Recent progress in ultraviolet AlGaN laser diodes
Harumasa Yoshida, Hiroyuki Taketomi, Yuta Aoki, Yasufumi Takagi, Atsushi Sugiyama, Masakazu Kuwabara, Yoji Yamashita, Satoru Okawara, Junya Maeda (Hamamatsu Photonics) R2016-26 EMD2016-30 CPM2016-39 OPE2016-60 LQE2016-35		 We will talk about the recent progress in ultraviolet (UV) laser diodes (LDs). The watt-class peak output power has been... [more] R2016-26 EMD2016-30 CPM2016-39 OPE2016-60 LQE2016-35
pp.35-40
LQE, ED, CPM 2014-11-27
11:50		 Osaka   Effects of relaxation layer of AlGaN multiple quantum wells by LP-MOVPE
Kazuhiro Nakahama (Mie Univ.), Fumitsugu Fukuyo (HAMA PHOTO), Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Harumasa Yoshida, Yuji Kobayashi (HAMA PHOTO) ED2014-76 CPM2014-133 LQE2014-104		  [more] ED2014-76 CPM2014-133 LQE2014-104
pp.15-18
EMD, LQE, OPE, CPM, R 2014-08-21
15:40		 Hokkaido Otaru Economy Center [Invited Lecture] Development of 9xx nm high power laser diode bars
Nobuto Kageyama, Takenori Morita, Kousuke Torii, Takehito Nagakura, Motoki Takauji, Junya Maeda, Harumasa Yoshida (Hamamatsu photonics) R2014-31 EMD2014-36 CPM2014-51 OPE2014-61 LQE2014-35		 We report recently developed 9xx nm high power laser diode bars for pumping solid-state lasers, fiber lasers and direct ... [more] R2014-31 EMD2014-36 CPM2014-51 OPE2014-61 LQE2014-35
pp.45-49
EMD, LQE, OPE, CPM, R 2014-08-22
09:35		 Hokkaido Otaru Economy Center [Invited Talk] Current status and future prospect of ultraviolet laser diodes
Harumasa Yoshida, Yuta Aoki, Masakazu Kuwabara, Yoji Yamashita, Kousuke Torii, Atsushi Sugiyama, Takenori Morita (Hamamatsu Photonics) R2014-37 EMD2014-42 CPM2014-57 OPE2014-67 LQE2014-41		 We will talk about the current status and the future prospect of ultraviolet laser diodes. The electrically driven laser... [more] R2014-37 EMD2014-42 CPM2014-57 OPE2014-67 LQE2014-41
pp.71-75
OPE, LQE, CPM, EMD, R 2013-08-29
16:30		 Hokkaido sun-refre Hakodate [Invited Lecture] Characteristics of Window-Structured 915 nm High Power Laser Diodes
Harumasa Yoshida, Takenori Morita, Takehito Nagakura, Kousuke Torii, Motoki Takauji, Junya Maeda (Hamamatsu Photonics) R2013-42 EMD2013-48 CPM2013-67 OPE2013-71 LQE2013-41		 We report the high-power 915-nm broad-area laser diodes with a window structure formed by the impurity-free vacancy diso... [more] R2013-42 EMD2013-48 CPM2013-67 OPE2013-71 LQE2013-41
pp.71-75
ED, LQE, CPM 2012-11-30
14:05		 Osaka Osaka City University Fabrication of Si-doped AlGaN multiple-quantum wells by low-pressure MOVPE and its application for deep-UV-light-source
Shunsuke Ochiai, Mayuna Takagi (Mie Univ.), Fumitsugu Fukuyo (Mie Univ. /HAMAMATSU PHOTONICS), Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Yuji Kobayashi, Harumasa Yoshida (HAMAMATSU PHOTONICS) ED2012-85 CPM2012-142 LQE2012-113		 AlxGa1-xN alloy has attracted significant attention owing to its emission covering the wavelength range from 210 to 365 ... [more] ED2012-85 CPM2012-142 LQE2012-113
pp.93-96
LQE 2010-12-17
17:15		 Tokyo Kikai-Shinko-Kaikan Bldg. AlGaN semiconductor lasers for short ultraviolet region
Harumasa Yoshida, Masakazu Kuwabara, Yoji Yamashita, Kazuya Uchiyama, Hirofumi Kan (Hamamatsu Photonics) LQE2010-128		 We have demonstrated the room-temperature operations of AlGaN based laser diodes under pulsed-current mode. AlGaN laser ... [more] LQE2010-128
pp.63-67
CPM, LQE, ED 2010-11-11
13:50		 Osaka   Fabrication and characterization of Si-doped AlGaN for deep-ultraviolet light-source by EB excitation
Yuki Shimahara, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Fumitsugu Fukuyo, Tomoyuki Okada, Hidetsugu Takaoka, Harumasa Yoshida (HPK) 		 [more]
ED, LQE, CPM 2009-11-19
09:50		 Tokushima Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) MOVPE growth and optical properties of AlGaN on AlN/sapphire
Yuki Shimahara, Hiroyuki Taketomi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Fumitsugu Fukuyo, Tomoyuki Okada, Hidetsugu Takaoka, Harumasa Yoshida (HAMAMATSU PHOTONICS K.K.) ED2009-130 CPM2009-104 LQE2009-109		 We performed growth of AlGaN on AlN/sapphire substrate as an underlying layer by low-pressure MOVPE with in-situ monitor... [more] ED2009-130 CPM2009-104 LQE2009-109
pp.9-12
ED, LQE, CPM 2009-11-19
15:45		 Tokushima Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) Ultraviolet AlGaN based multiple-quantum-well laser diodes
Harumasa Yoshida, Masakazu Kuwabara, Yoji Yamashita, Yasufumi Takagi, Kazuya Uchiyama, Hirofumi Kan (Hamamatsu Photonics) ED2009-141 CPM2009-115 LQE2009-120		 We have demonstrated the room-temperature operations of AlGaN based multi-quantum-well (MQW) laser diodes under pulsed-c... [more] ED2009-141 CPM2009-115 LQE2009-120
pp.61-64
ED, LQE, CPM 2009-11-19
16:10		 Tokushima Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) Reduction in operating voltage of UV laser diode
Tomoki Ichikawa, Kenichiro Takeda, Yuji Ogiso, Kengo Nagata, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki (Meijo Univ.), Harumasa Yoshida, Masakazu Kuwabara, Yoji Yamashita, Hirofumi Kan (Hamamatsu Photonics K.K.) ED2009-142 CPM2009-116 LQE2009-121		 Annealing condition for n-type electrode in AlGaN-based UV LD was investigated. High temperature annealing is found to b... [more] ED2009-142 CPM2009-116 LQE2009-121
pp.65-69
ED, CPM, SDM 2009-05-15
13:00		 Aichi Satellite Office, Toyohashi Univ. of Technology MOVPE growth and deep-ultraviolet chathodoluminescence of AlGaN on AlN/sapphire
Hiroyuki Taketomi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Fumitsugu Fukuyo, Tomoyuki Okada, Hidetsugu Takaoka, Harumasa Yoshida (HAMAMATSU PHOTONICS K.K.) ED2009-32 CPM2009-22 SDM2009-22		 A high-quality AlGaN with high Al mole fraction is required for improvement of device performance such as light-emitting... [more] ED2009-32 CPM2009-22 SDM2009-22
pp.77-81
 Results 1 - 12 of 12  /   
Choose a download format for default settings. [NEW !!]
Text format pLaTeX format CSV format BibTeX format
Copyright and reproduction : All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan