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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 19 of 19  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2022-11-11
Online Online [Invited Talk] Toward Super Temporal Resolution by Suppression of Mixing Effects of Electrons
Takeharu Goji Etoh (Osaka Univ.), Kazuhiro Shimonomura, Taeko Ando, Yoshiyuki Matsunaga, Yutaka Hirose (Ritsumeikan Univ.), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.), Yoshinari Kamakura (OIT), Hideki Mutoh (Link Research) SDM2022-71
The theoretical temporal resolution limit of silicon (Si) image sensors is 11.1 ps. The super temporal resolution (STR) ... [more] SDM2022-71
SDM 2022-10-19
Online Online [Invited Talk] Reliability improvement of SiC MOSFET by high-temperature CO2 annealing
Takuji Hosoi (Kwansei Gakuin Univ.), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2022-62
Threshold voltage instability is one of the reliability concerns for SiC MOSFETs. NO post-oxidation annealing (NO-POA) i... [more] SDM2022-62
SDM 2019-06-21
Aichi Nagoya Univ. VBL3F Depth Profiling of Nitrogen Atoms in No-annealed SiO2/4H-SiC Structures
Takuji Hosoi, Kidist Moges (Osaka Univ.), Mitsuru Sometani (AIST), Takayoshi Shimura (Osaka Univ.), Shinsuke Harada (AIST), Heiji Watanabe (Osaka Univ.) SDM2019-25
 [more] SDM2019-25
SDM 2018-06-25
Aichi Nagoya Univ. VBL3F Control of SiO2/GaN Interface for High-performance GaN MOSFET
Tauji Hosoi, Takahiro Yamada, Mikito Nozaki (Osaka Univ.), Tokio Takahashi, Hisashi Yamada, Mitsuaki Shimizu (AIST), Akitaka Yoshigoe (JAEA), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2018-18
A high-quality gate insulator together with low interface states is indispensable for GaN-based power MOSFETs. We have r... [more] SDM2018-18
SDM 2015-06-19
Aichi VBL, Nagoya Univ. Understanding of Schottky Barrier Height Modulation at NiGe/Ge Interfaces for Metal S/D Ge CMOS Technology
Hiroshi Oka, Yuya Minoura, Ryohei Asahara, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2015-48
Besides low solubility and activation rate of n-type dopant in Ge, Fermi level pinning (FLP) at metal/Ge interface leads... [more] SDM2015-48
SDM 2014-06-19
Aichi VBL, Nagoya Univ. Process Design of High-k/Ge Gate Stack for Improving Thermal Stability and Interface Properties in Sub-1-nm Regime
Ryohei Asahara, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2014-43
Suppression of GeOx formation and Ge diffusion into high-k layer is important to develop sub-1-nm EOT metal/high-k gate ... [more] SDM2014-43
SDM 2013-06-18
Tokyo Kikai-Shinko-Kaikan Bldg. Germanide formation in metal/high-k/Ge gate stacks and its impact on electrical properties
Takuji Hosoi, Iori Hideshima, Yuya Minoura, Ryohei Tanaka (Osaka Univ.), Akitaka Yoshigoe, Yuden Teraoka (JAEA), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2013-47
 [more] SDM2013-47
SDM 2013-06-18
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] Implementation of High-k Gate Dielectrics in SiC Power MOSFET
Takuji Hosoi (Osaka Univ.), Shuji Azumo, Yusaku Kashiwagi, Shigetoshi Hosaka (Tokyo Electron), Ryota Nakamura, Yuki Nakano, Hirokazu Asahara, Takashi Nakamura (ROHM), Tsunenobu Kimoto (Kyoto Univ.), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2013-59
 [more] SDM2013-59
SDM 2013-06-18
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] Unusual Generation and Elimination of Mobile Ions in Thermally Grown Oxides in SiC-MOS Devices
Heiji Watanabe, Atthawut Chanthaphan (Osaka Univ), Yuki Nakano, Takashi Nakamura (ROHM), Takuji Hosoi, Takayoshi Shimura (Osaka Univ) SDM2013-61
Unusual generation and elimination of mobile ions in thermally grown SiO2 on 4H-SiC(0001) were systematically investigat... [more] SDM2013-61
Okinawa Okinawa Seinen-kaikan [Invited Talk] Gate Stack Technologies for Silicon Carbide Power MOS Devices
Takuji Hosoi, Takashi Kirino, Yusuke Uenishi, Daisuke Ikeguchi, Atthawut Chanthaphan (Osaka Univ.), Akitaka Yoshigoe, Yuden Teraoka (JAEA), Shuhei Mitani, Yuki Nakano, Takashi Nakamura (ROHM), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.)
Silicon carbide (SiC) is a promising material for high-power electronic devices. Although SiO$_2$ dielectric film can be... [more]
SDM 2012-06-21
Aichi VBL, Nagoya Univ. High-mobility Ge MOSFETs with ultrathin GeON gate dielectrics
Yuya Minoura, Atsushi Kasuya, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2012-47
Germanium has recently attracted much attention as a promising channel material for next generation metal-oxide-semicond... [more] SDM2012-47
SDM 2012-06-21
Aichi VBL, Nagoya Univ. Oxygen-induced high-k dielectric degradation in TiN/Hf-based high-k gate stacks
Takuji Hosoi, Yuki Odake, Hiroaki Arimura, Keisuke Chikaraishi, Naomu Kitano, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2012-51
Effective work function control and equivalent oxide thickness (EOT) scaling are the major concerns for implementing met... [more] SDM2012-51
SDM 2011-07-04
Aichi VBL, Nagoya Univ. Hf and La upward diffusion into TiN electrode in TiN/HfLaSiO/SiO2 gate stacks induced by high-temperature annealing and its suppression with MIPS structure
Yuki Odake, Hiroaki Arimura, Masayuki Saeki, Keisuke Chikaraishi, Naomu Kitano, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2011-65
We investigated Hf and La upward diffusion in TiN/HfLaSiO/SiO2 gate stacks by means of electrical characterization and X... [more] SDM2011-65
SDM 2010-11-11
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Comprehensive understanding of oxygen vacancy induced effective work function modulation in high-k/metal gate stacks
Takuji Hosoi, Masayuki Saeki, Yuki Kita, Yudai Oku, Hiroaki Arimura, Naomu Kitano (Osaka Univ.), Kenji Shiraishi, Keisaku Yamada (Univ. Tsukuba), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2010-175
Effective work function of p-type gate electrodes on Hf-based high-k dielectrics is known to decrease after high tempera... [more] SDM2010-175
SDM 2009-06-19
Tokyo An401・402 Inst. Indus. Sci., The Univ. of Tokyo Fundamental Study on GeO2/Ge Interface and its Electrical Properties
Heiji Watanabe, Marina Saito, Shoichiro Saito, Gaku Okamoto, Katsuhiro Kutsuki, Takuji Hosoi, Tomoya Ono, Takayoshi Shimura (Osaka Univ.) SDM2009-29
 [more] SDM2009-29
SDM 2008-12-05
Kyoto Kyoto University, Katsura Campus, A1-001 [Invited Talk] Mechanisms of Effective Work Function Modulation of Metal/Hf-based High-k Gate Stacks
Heiji Watanabe, Yuki Kita, Takuji Hosoi, Takayoshi Shimura (Osaka Univ.), Kenji Shiraishi (Univ. of Tsukuba), Yasuo Nara (SELETE), Keisaku Yamada (Waseda Univ.) SDM2008-188
 [more] SDM2008-188
SDM, OME 2008-04-12
Okinawa Okinawa Seinen Kaikan Formation of Polycrystalline Si Thin Films Using Nanocrystalline Ge Nuclei
Chiaki Yoshimoto, Hiromasa Ohmi, Takayoshi Shimura, Hiroaki Kakiuchi, Heiji Watanabe, Kiyoshi Yasutake (Osaka Univ.) SDM2008-18 OME2008-18
Large-grained poly-Si thin films are needed for the fabrication of high-performance thin film transistors (TFTs). We hav... [more] SDM2008-18 OME2008-18
SDM 2007-06-08
Hiroshima Hiroshima Univ. ( Faculty Club) Formation and characterization of Ge$_3$N$_4$ thin layers
Katsuhiro Kutsuki, Gaku Okamoto, Takuji Hosoi, Takayoshi Shimura, Kiyoshi Yasutake, Heiji Watanabe (Osaka Univ.) SDM2007-49
We have investigated the nitridation of germanium substrate by our original high-density plasma source. Pure amorphous G... [more] SDM2007-49
SDM 2006-06-21
Hiroshima Faculty Club, Hiroshima Univ. Electric Properties on High-k Capacitors with Work-Function Tuned Metal Electrodes
Kenji Ohmori (NIMS), Parhat Ahmet (TIT), Kenji Shiraishi (Univ. of Tsukuba), Heiji Watanabe (Osaka Univ.), Yasushi Akasaka (Selete), Kikuo Yamabe (Univ. of Tsukuba), Michiko Yoshitake (NIMS), K. S. Chang, M. L. Green (NIST), Yasuo Nara (Selete), Keisaku Yamada (Waseda Univ.), Toyohiro Chikyow (NIMS)
 [more] SDM2006-48
 Results 1 - 19 of 19  /   
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