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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, LQE, CPM 2015-11-26
13:10
Osaka Osaka City University Media Center Analysis of hole concentration and mobility of lightly Mg-doped p-type GaN by Hall-effect measurements
Masahiro Horita (Kyoto Univ.), Shinya Takashima, Ryo Tanaka, Hideaki Matsuyama, Katsunori Ueno, Masaharu Edo (Fuji Electric), Jun Suda (Kyoto Univ.) ED2015-72 CPM2015-107 LQE2015-104
Lightly-Mg-doped p-type gallium nitride (GaN) with the Mg concentration of $6.5times 10^{16}~mbox{cm}^{-3}$ was characte... [more] ED2015-72 CPM2015-107 LQE2015-104
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