Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
MRIS, CPM, ITE-MMS, OME [detail] |
2023-10-27 10:30 |
Niigata |
Niigata Univ. Ekiminami Campus (Primary: On-site, Secondary: Online) |
Mechanical properties and heat resistance of Si- and N-doped diamond-like carbon films Yuya Yamazaki, Yuya Sasaki, Hideki Nakazawa (Hirosaki Univ.) MRIS2023-17 CPM2023-51 OME2023-38 |
Silicon- and nitrogen-doped diamond-like carbon (Si–N–DLC) films have been deposited by plasma-enhanced chemical vapor d... [more] |
MRIS2023-17 CPM2023-51 OME2023-38 pp.33-36 |
CPM |
2023-08-01 09:45 |
Hokkaido |
(Primary: On-site, Secondary: Online) |
Fabrication of SiC/AlN multilayer structure on 3°off-axis Si(110) substrate and graphene formation thereon Ryosuke Saito, Yuki Nara, Daiki Kasai, Haruto Koriyama, Yoshiharu Enta, Hideki Nakazawa (Hirosaki Univ.) CPM2023-19 |
We have grown aluminum nitride (AlN) films on 3 ̊off-axis Si(110) substrates by pulsed laser deposition (PLD) and formed... [more] |
CPM2023-19 pp.29-32 |
CPM |
2023-02-28 11:30 |
Tokyo |
Tokyo University of Technology (Primary: On-site, Secondary: Online) |
Photovoltaic properties of boron carbide thin films prepared by magnetron sputtering using hydrogen gas Tatsuya Nishida, Masayoshi Sato, Yasuyuki Kobayashi, Yoshiharu Enta, Hideki Nakazawa (Hirosaki Univ.) CPM2022-94 |
[more] |
CPM2022-94 pp.35-38 |
CPM |
2022-08-04 16:15 |
Hokkaido |
|
Hydrogen gas effects on the properties of boron carbide films prepared by magnetron sputtering Nishida Tatsuya, Taniguchi Ryu, Masayoshi Sato, Yasuyuki Kobayashi, Yoshiharu Enta, Yushi Suzuki (Hirosaki Univ.), Hirokazu Fukidome (Touhoku Univ.), Hideki Nakazawa (Hirosaki Univ.) CPM2022-15 |
We have deposited amorphous boron carbide (B4C) films and hydrogenated amorphous B4C (B4C:H) films by RF magnetron sputt... [more] |
CPM2022-15 pp.14-17 |
CPM |
2021-10-27 13:20 |
Online |
Online |
Effects of H2 and Ar dilution on the optical and electrical properties of Si and N doped diamond-like carbon films by plasma-enhanced chemical vapor deposition Yuya Sasaki, Hiroya Osanai, Yusuke Ohtani, Yuta Murono, Masayoshi Sato, Yasuyuki Kobayashi, Yoshiharu Enta, Yushi Suzuki, Hideki Nakazawa (Hirosaki Univ.) CPM2021-26 |
We have deposited silicon and nitrogen doped diamond-like carbon (Si–N–DLC) films by radio frequency plasma-enhanced che... [more] |
CPM2021-26 pp.23-28 |
CPM |
2020-10-29 13:40 |
Online |
Online |
Effects of SiC low-temperature buffer layer on SiC epitaxial growth on AlN/Si(110) substrate Hiroki Kasai, Yuki Nara, Hideki Nakazawa (Hirosaki Univ.) CPM2020-13 |
[more] |
CPM2020-13 pp.7-10 |
CPM |
2020-10-29 15:10 |
Online |
Online |
Hydrogen effects on the properties of BCN films deposited by magnetron sputtering Ryu Taniguchi, Haruto Koriyama, Yasuyuki Kobayashi, Yoshiharu Enta (Hirosaki Univ.), Hirokazu Fukidome (Tohoku Univ.), Hideki Nakazawa (Hirosaki Univ.) CPM2020-17 |
[more] |
CPM2020-17 pp.23-26 |
CPM |
2019-11-07 15:00 |
Fukui |
Fukui univ. |
Annealing effects on the properties of nitrogen doped DLC films Hiroya Osanai, Kazuki Nakamura, Haruto Koriyama, Yasuyuki Kobayashi, Yoshiharu Enta, Yushi Suzuki (Hirosaki Univ.), Maki Suemitsu (Tohoku Univ.), Hideki Nakazawa (Hirosaki Univ.) CPM2019-46 |
We have prepared nitrogen doped diamond-like carbon (N-DLC) films by plasma-enhanced chemical vapor deposition using H2 ... [more] |
CPM2019-46 pp.9-14 |
CPM |
2019-08-26 15:50 |
Hokkaido |
Kitami Institute of Technology |
Formation of an AlN intermediate layer on an off-axis Si(110) substrate and SiC heteroepitaxial growth thereon Hideki Nakazawa, Yuki Nara, Hiroki Kasai (Hirosaki Univ.) CPM2019-42 |
We have grown AlN films on off-axis Si(110) substrates by pulsed laser deposition (PLD) and then formed SiC buffer layer... [more] |
CPM2019-42 pp.23-28 |
CPM |
2019-02-28 15:25 |
Tokyo |
|
Preparation and characterization of carbon related thin films Hideki Nakazawa (Hirosaki U) CPM2018-109 |
[more] |
CPM2018-109 pp.37-40 |
CPM, IEE-MAG |
2018-11-02 14:25 |
Niigata |
Machinaka campus Nagaoka |
Thermal stability of silicon and nitrogen doped DLC thin films Hideki Nakazawa, Kazuki Nakamura, Hiroya Osanai, Haruto Koriyama, Yasuyuki Kobayashi, Yoshiharu Enta, Yushi Suzuki (Hirosaki Univ.), Maki Suemitsu (Tohoku Univ.) CPM2018-52 |
We have investigated the effects of post-annealing on the properties of silicon and nitrogen doped diamond-like carbon (... [more] |
CPM2018-52 pp.99-104 |
CPM |
2018-08-09 14:30 |
Aomori |
Hirosaki Univ. |
Effects of nitrogen doping on the properties of Si-doped DLC films Kazuki Nakamura, Haruka Oohashi (Hirosaki Univ.), Tai Yokoyama, Kei-ichiro Tajima, Norihumi Endo, Maki Suemitsu (Tohoku Univ.), Yoshiharu Enta, Yasuyuki Kobayashi, Yushi Suzuki, Hideki Nakazawa (Hirosaki Univ.) CPM2018-8 |
We have investigated the effects of nitrogen (N) doping on the chemical bonding states and the electrical, optical, and ... [more] |
CPM2018-8 pp.1-6 |
CPM |
2018-08-09 14:50 |
Aomori |
Hirosaki Univ. |
Growth of graphene on SiC/AlN/Si(110) substrates Hideki Nakazawa, Syunki Narita, Yuki Nara, Yoshiharu Enta (Hirosaki Univ.) CPM2018-9 |
We have grown aluminum nitride (AlN) films on 3º off-axis Si(110) substrates by pulsed laser deposition (PLD), and inves... [more] |
CPM2018-9 pp.7-12 |
CPM |
2018-08-09 15:10 |
Aomori |
Hirosaki Univ. |
Investigation of formation conditions of SiC buffer layers for SiC/SiC buffer layer/AlN/Si(110) multilayer structures Yuki Nara, Asahi Kudo, Hideki Nakazawa (Hirosaki Univ.) CPM2018-10 |
We have grown aluminum nitride (AlN) films on 3° off-axis Si(110) substrates by pulsed laser deposition using an AlN tar... [more] |
CPM2018-10 pp.13-16 |
CPM |
2018-08-09 16:05 |
Aomori |
Hirosaki Univ. |
Study on the formation mechanism of Bi-mediated Ge nanodots fabricated by vacuum evaporation Kazuto Tsushima, Kensuke Takita, Hideki Nakazawa (Hirosaki Univ.), Takehiko Tawara, Kouta Tateno, Guoqiang Zhang, Hideki Gotoh (NTT), Takayuki Ikeda, Seiichiro Mizuno (NTT-AT), Hiroshi Okamoto (Hirosaki Univ.) CPM2018-12 |
[more] |
CPM2018-12 pp.21-24 |
R, EMD, CPM, LQE, OPE |
2017-08-31 13:55 |
Aomori |
|
Epitaxial growth of SiC on AlN/Si(110) substrates using SiC buffer layer by pulsed laser deposition Yuki Nara, Syunki Narita, Hideki Nakazawa (Hirosaki Univ.) R2017-25 EMD2017-19 CPM2017-40 OPE2017-49 LQE2017-22 |
We have grown aluminum nitride (AlN) films on 3° off-axis Si(110) substrates by pulsed laser deposition using an AlN tar... [more] |
R2017-25 EMD2017-19 CPM2017-40 OPE2017-49 LQE2017-22 pp.7-10 |
CPM |
2015-08-10 13:20 |
Aomori |
|
Preparation and characterization of SiC thin films on AlN/Si(110) substrates by pulsed laser deposition Kazuki Meguro, Shunki Narita, Hideki Nakazawa (Hirosaki Univ.) CPM2015-31 |
We have formed a SiC interfacial buffer layer on AlN/Si(110) substrates at a low temperature, and grew SiC films on the ... [more] |
CPM2015-31 pp.1-5 |
CPM |
2015-08-10 13:40 |
Aomori |
|
Effects of substrate bias on properties of nitrogen-doped DLC films prepared by radio frequency plasma-enhanced chemical vapor deposition Masato Tsuchiya, Kazuki Murakami, Tatsuhito Satou, Takahiro Takami, Yoshiharu Enta, Hideki Nakazawa (Hirosaki Univ.) CPM2015-32 |
We have deposited nitrogen-doped diamond-like carbon (N-DLC) films by RF plasma-enhanced chemical vapor deposition using... [more] |
CPM2015-32 pp.7-10 |
CPM |
2015-08-10 14:00 |
Aomori |
|
Growth of epitaxial SiC thin films on AlN/Si(110) substrates by pulsed laser deposition Shunki Narita, Kazuki Meguro, Hideki Nakazawa (Hirosaki Univ.) CPM2015-33 |
We have grown aluminum nitride (AlN) films on Si(110) substrate by pulsed laser deposition using an AlN target, and inve... [more] |
CPM2015-33 pp.11-14 |
CPM |
2014-09-04 13:30 |
Yamagata |
The 100th Anniversary Hall, Yamagata University |
Characterization of nitrogen-doped DLC film prepared by radio frequency plasma-enhanced chemical vapor deposition Masato Tsuchiya, Kouhei Magara, Kengo Tokuda, Hideki Nakazawa (Hirosaki Univ.) CPM2014-75 |
[more] |
CPM2014-75 pp.1-5 |