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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, MW 2010-01-14
15:30		 Tokyo Kikai-Shinko-Kaikan Bldg A Normally-off AlGaN/GaN HFET with High Threshold Voltage Uniformity
Kazuki Ota, Kazuomi Endo, Yasuhiro Okamoto, Yuji Ando, Hironobu Miyamoto, Hidenori Shimawaki (NEC Corp.) ED2009-189 MW2009-172		 In this paper, we successfully demonstrate a recessed gate normally-off AlGaN/GaN HFET on a silicon substrate with high ... [more] ED2009-189 MW2009-172
pp.81-85
MW 2008-08-28
14:45		 Osaka Osaka-Univ. (Toyonaka) 60-GHz-band CMOS Power Amplifier and Transceiver Technology
Masahiro Tanomura, Yasuhiro Hamada, Shuya Kishimoto, Masaharu Ito, Naoyuki Orihashi, Kenichi Maruhashi, Hidenori Shimawaki (NEC) MW2008-86		 This paper describes a millimeter-wave power amplifier (PA) and a transceiver fabricated in standard 90-nm CMOS technolo... [more] MW2008-86
pp.41-46
MW, ED 2005-11-17
11:40		 Saga   -
Shuya Kishimoto, Kenichi Maruhashi, Masaharu Ito, Keiichi Ohata, Takao Morimoto, Yasuhiro Hamada, Hidenori Shimawaki (NEC) 		We have developed a wireless system transmitting motion pictures from a personal computer utilizing a 60 GHz-band transc... [more] ED2005-163 MW2005-118
pp.29-32
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