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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 56  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE, ED, CPM 2023-12-01
Shizuoka   Fabrication of vertical AlGaN-based UV-B LD
Toma Nishibayashi, Ryosuke Kondo, Eri Matsubara, Ryoya Yamada, Yoshinori Imoto, Koki Hattori, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya (Meijo Univ.), Hideto Miyake (Mie Univ.), Kohei Miyoshi, Koichi Naniwae (Ushio Inc.), Akihiko Yamaguchi (Seishin Trading Co. Ltd.) ED2023-33 CPM2023-75 LQE2023-73
In this study, we report on the fabrication method and characteristics of vertical UV-B laser diodes, which are advantag... [more] ED2023-33 CPM2023-75 LQE2023-73
LQE, ED, CPM 2023-12-01
Shizuoka   Effects of AlN template polarity on BN grown by MOVPE and high temperature annealing
Yuto Oishi, Hideto Miyake, Kenjiro Uesugi, Toru Akiyama, Tomohiro Tamano, Shiyu Xiao (Mie University) ED2023-35 CPM2023-77 LQE2023-75
 [more] ED2023-35 CPM2023-77 LQE2023-75
LQE, ED, CPM 2023-12-01
Shizuoka   The properties of UV-B laser diodes on AlN nanopillars by using wet etching method
Yoshinori Imoto, Ryosuke Kondo, Ryoya Yamada, Koki Hattori, Toma Nishibayashi, Sho Iwayama, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya (Meijo Univ), Hideto Miyake (Mie Univ) ED2023-36 CPM2023-78 LQE2023-76
Our groups reported that we could fabricate high quality lattice relaxed AlGaN grown on periodic AlN nanopillars.and thr... [more] ED2023-36 CPM2023-78 LQE2023-76
CPM, ED, LQE 2022-11-25
Aichi Winc Aichi (Aichi Industry & Labor Center)
(Primary: On-site, Secondary: Online)
Fabrication of AlGaN-based UV-B semiconductor lasers and their device performance
Ayumu Yabutani, Ryota Hasegawa, Ryosuke kondo, Eri Matsubara (Meijo Univ.), Sho Iwayama (Meijo Univ./Mie Univ.), Yoshito Jin, Tatsuya Matsumoto, Masamitsu Toramaru (JSW), Hironori Torii (JSW afty), Daichi Imai, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya (Meijo Univ.), Hideto Miyake (Mie Univ.) ED2022-44 CPM2022-69 LQE2022-77
 [more] ED2022-44 CPM2022-69 LQE2022-77
ED, CPM, LQE 2021-11-25
Online Online Substrate off-cut angle dependence on fabrication of high-temperature annealed a-plane AlN on r-plane sapphire
Kota Shibutani, Kenjiro Uesugi, Shiyu Xiao, Kanako Shojiki, Shigeyuki Kuboya, Toru Akiyama, Hideto Miyake (Mie Univ.) ED2021-25 CPM2021-59 LQE2021-37
 [more] ED2021-25 CPM2021-59 LQE2021-37
ED, CPM, LQE 2021-11-25
Online Online Growth of 220-nm-band-emission AlGaN Quantum Wells Using Annealed Sputtered AlN Template
Shoya Ishihara, Shigeyuki Kuboya, Kanako Shojiki, Kenjiro Uesugi, Xiao Shiyu, Hideto Miyake (Mie Univ.) ED2021-26 CPM2021-60 LQE2021-38
 [more] ED2021-26 CPM2021-60 LQE2021-38
ED, CPM, LQE 2021-11-26
Online Online Fabrication and electrical property characterization of AlGaN channel HEMT on AlN template
Ryuichi Mori, Kenjiro Uesugi, Shegeyuki Kuboya, Kanako Shojiki, Hideto Miyake (Mie Univ.) ED2021-33 CPM2021-67 LQE2021-45
$Al_{0.85}Ga_{0.15}N$/$Al_{0.60}Ga_{0.40}N$ HEMT structures with channel thicknesses of 100–1000 nm were grown on low-di... [more] ED2021-33 CPM2021-67 LQE2021-45
LQE, CPM, ED 2020-11-26
Online Online Calculation of carrier injection efficiency of AlGaN UVB Laser Diode
Kosuke Sato (Asahi-Kasei), Tomoya Omori, Kazuki Yamada, Shunya Tanaka, Sayaka Ishizuka, Shohei Teramura, Sho Iwayama, Motoaki Iwaya (Meijo Univ.), Hideto Miyake (Mie Univ.), Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.) ED2020-3 CPM2020-24 LQE2020-54
 [more] ED2020-3 CPM2020-24 LQE2020-54
LQE, CPM, ED 2020-11-26
Online Online Growth of GaN on AlN template with atomic-level flatness for High Electron Mobility Transistor
Tatsuya Shirato, Kenjiro Uesugi, Shigeyuki Kuboya, Kanako Shojiki, Hideto Miyake (Mie Univ.) ED2020-11 CPM2020-32 LQE2020-62
We investigated the effect of carrier gas on GaN surface morphology. Bunched step-and-terrace structures and pits were f... [more] ED2020-11 CPM2020-32 LQE2020-62
LQE, CPM, ED 2020-11-27
Online Online Optimization of the optical waveguide layer in AlGaN-based UV-B LD
Shunya Tanaka (Meijo Univ.), Kosuke Sato (Asahi-Kasei), Shinji Yasue, Yuya Ogino, Kazuki Yamada, Sayaka Ishizuka, Tomoya Omori, Shohei Teramura, Sho Iwayama (Meijo Univ.), Hideto Miyake (Mie Univ.), Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.) ED2020-20 CPM2020-41 LQE2020-71
Recently, the group reported the realization of current injection semiconductor lasers in the UV-B region. In the future... [more] ED2020-20 CPM2020-41 LQE2020-71
LQE, CPM, ED 2020-11-27
Online Online Crystalline Quality Improvement of Sputtered h-BN on Sapphire by High-Temperature Annealing
Ryoji Kataoka, Haruhiko Koizumi, Sho Iwayama, Hideto Miyake (Mie Univ.) ED2020-22 CPM2020-43 LQE2020-73
Hexagonal boron nitride(h-BN) is a two-dimensional layered materials and is expected to functions as a strain relaxation... [more] ED2020-22 CPM2020-43 LQE2020-73
LQE, CPM, ED 2020-11-27
Online Online MOVPE Growth on Low-dislocation-density AlN Templates with Nano-Striped Patterns and Crystalline-Quality Evaluations
Yukino Iba, Kanako Shojiki, Shigeyuki Kuboya, Kenjiro Uesugi, Shiyu Xiao, Hideto Miyake (Mie Univ.) ED2020-24 CPM2020-45 LQE2020-75
We conducted metalorganic vapor phase epitaxial (MOVPE) growth of AlN films on face-to-face annealed sputtered AlN templ... [more] ED2020-24 CPM2020-45 LQE2020-75
LQE, CPM, ED 2020-11-27
Online Online Introduction of AlN/GaN Superlattice Layers for Growth of Strain-Relaxed AlGaN Films on AlN Templates
Takafumi Inamori, Shigeyuki Kuboya, Shoya Ishihara, Tatsuya Shirato, Kenjiro Uesugi, Kanako Shojiki, Hideto Miyake (Mie Univ.) ED2020-26 CPM2020-47 LQE2020-77
 [more] ED2020-26 CPM2020-47 LQE2020-77
CPM, LQE, ED 2019-11-21
Shizuoka Shizuoka Univ. (Hamamatsu) AlGaN-based electron beam excitation UV lasers using AlGaN well layer
Yusuke Sakuragi, Shinji Yasue, Shohei Teramura, Yuya Ogino, Syunya Tanaka, Sho Iwayama, Motoaki Iwaya, Satoshi Kamiyama, Tetsuya Takeuchi, Iwamu Akasaki (Meijo University), HIdeto Miyake (Mie University) ED2019-43 CPM2019-62 LQE2019-86
(To be available after the conference date) [more] ED2019-43 CPM2019-62 LQE2019-86
CPM, LQE, ED 2019-11-22
Shizuoka Shizuoka Univ. (Hamamatsu) Dislocation density dependence of optical gain and internal loss in UV-B region AlGaN active layer
Shunya Tanaka, Yuta Kawase (Meijo Univ.), Kosuke Sato (Asahi-Kasei/Meijo Univ.), Shinji Yasue, Shohei Teramura, Yuya Ogino (Meijo Univ.), Sho Iwayama (Meijo Univ./Mie Univ.), Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijo Univ.), Isamu Akasaki (Meijo Univ./Akasaki Research Center, Nagoya Univ.), Hideto Miyake (Mie Univ.) ED2019-55 CPM2019-74 LQE2019-98
The dependence of threshold pumping power density, optical gain, and internal loss on the dislocation density of AlGaN-b... [more] ED2019-55 CPM2019-74 LQE2019-98
ED, LQE, CPM 2018-11-30
Aichi Nagoya Inst. tech. Quality improvement and characteristic evaluations of sputter-deposited a-plane AlN on r-plane sapphire
Ryo Fukuta, Kanako Shojiki, Jiang Nan, Kenjiro Uesugi, Yusuke Hayashi, Xiao Shiyu, Hideto Miyake (Mie Univ.) ED2018-50 CPM2018-84 LQE2018-104
 [more] ED2018-50 CPM2018-84 LQE2018-104
EMT, EST, LQE, MWP, OPE, PEM, PN, IEE-EMT [detail] 2018-01-25
Hyogo   The study on propagation characteristic of the propagation type surface plasmon in the Double-layer Wire Grid Structure.
Naoya Watanabe, Atsushi Motogaito, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.) PN2017-46 EMT2017-83 OPE2017-124 LQE2017-106 EST2017-82 MWP2017-59
Wire Grid structure is the structure that various application is expected. The application such as a light polarizer and... [more] PN2017-46 EMT2017-83 OPE2017-124 LQE2017-106 EST2017-82 MWP2017-59
EMT, EST, LQE, MWP, OPE, PEM, PN, IEE-EMT [detail] 2018-01-25
Hyogo   Characteristic of Surface Plasmon Excitation and Sensitivity of Surface Plasmon Sensor using the 1D Metal Diffraction Grating
Yusuke Ito, Atsushi Motogaito, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.) PN2017-47 EMT2017-84 OPE2017-125 LQE2017-107 EST2017-83 MWP2017-60
 [more] PN2017-47 EMT2017-84 OPE2017-125 LQE2017-107 EST2017-83 MWP2017-60
LQE, CPM, ED 2017-12-01
Aichi Nagoya Inst. tech. Homoepitaxial growth on sputtered AlN templates by MOVPE
Ryo Yoshizawa, Yusuke Hayashi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.) ED2017-66 CPM2017-109 LQE2017-79
AlN is a wide band gap semiconductor and has attracted attention as a material for deep UV light device because its ther... [more] ED2017-66 CPM2017-109 LQE2017-79
LQE, CPM, ED 2017-12-01
Aichi Nagoya Inst. tech. Fabrication of Polarity-inverted AlN by Face-to-Face Annealing and Application for QPM-SHG
Yusuke Hayashi, Hideto Miyake, Kazumasa Hiramatsu, Toru Akiyama, Tomonori Ito (Mie Univ.), Ryuji Katayama (Osaka Univ.) ED2017-67 CPM2017-110 LQE2017-80
 [more] ED2017-67 CPM2017-110 LQE2017-80
 Results 1 - 20 of 56  /  [Next]  
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