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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 11 of 11  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
MW, ED 2019-01-17
Tokyo Hitachi, Central Research Lab. ED2018-78 MW2018-145 (To be available after the conference date) [more] ED2018-78 MW2018-145
MW, ED 2017-01-27
Tokyo Kikai-Shinko-Kaikan Bldg. C-Ku band over 10 W Broadband Power Amplifier using Broadband Series-Shunt Inductor Matching Network
Eigo Kuwata, Atsuo Sugimoto, Hidetoshi Koyama, Yoshitaka Kamo, Ryota Komaru, Koji Yamanaka (Mitsubishi Electric) ED2016-110 MW2016-186
This paper reports on a Gallium Nitride High Electron Mobility Transistor (GaN HEMT) Monolithic Microwave Integrated Cir... [more] ED2016-110 MW2016-186
CPM, LQE, ED 2016-12-12
Kyoto Kyoto University Normally-off operation of planar GaN MOS-HFET
Takuma Nanjo, Tetsuro Hayashida, Hidetoshi Koyama, Akifumi Imai, Akihiko Furukawa, Mikio Yamamuka (Mitsubishi Electric) ED2016-63 CPM2016-96 LQE2016-79
Normally-off operation with high drain current density was firstly demonstrated in simple planar type GaN MOS-HFET with ... [more] ED2016-63 CPM2016-96 LQE2016-79
ED 2016-01-20
Tokyo Kikai-Shinko-Kaikan Bldg. Analysis of Millimeter Wave Oscillation in GaN HEMT Unit Cell
Shinsuke Watanabe, Shouhei Imai, Eigo Kuwata, Hidetoshi Koyama, Yoshitaka Kamo, Yoshitsugu Yamamoto (Mitsubishi Electric) ED2015-119
A millimeter wave oscillation was observed in GaN HEMT unit cell. To prevent this oscillation, we performed electromagne... [more] ED2015-119
MW, ED 2015-01-16
Tokyo Kikai-Shinko-Kaikan Bldg. Modeling of traps for GaN HEMT by transient response measurement and TCAD simulation
Yutaro Yamaguchi, Takuma Nanjo, Hidetoshi Koyama, Yoshitaka Kamo, Koji Yamanaka (Mitsubishi Electric corp.), Toshiyuki Oishi (Saga Univ.) ED2014-129 MW2014-193
In this paper, we reported the result of analysis of traps at the buffer in GaN HEMT by both transient response measurem... [more] ED2014-129 MW2014-193
MW, OPE, EMT, MWP, EST, IEE-EMT [detail] 2014-07-17
Hokkaido Muroran Inst. of Tech. C-Ku Band Ultra Broadband High Power Reactive Matching MMIC Amplifier using Broadband Interstage Matching Network
Shuichi Sakata, Eigo Kuwata, Koji Yamanaka, Tasuku Kirikoshi, Hidetoshi Koyama, Yoshitaka Kamo, Hiroshi Fukumoto (Mitsubishi Electric) MW2014-53 OPE2014-22 EST2014-14 MWP2014-11
This paper reports on a Gallium Nitride High Electron Mobility Transistor (GaN HEMT) Monolithic Microwave Integrated Cir... [more] MW2014-53 OPE2014-22 EST2014-14 MWP2014-11
MW, OPE, EMT, MWP, EST, IEE-EMT [detail] 2014-07-17
Hokkaido Muroran Inst. of Tech. X Band High Power and High Efficiency Amplifier with 2nd Harmoics rejection circuits
Eigo Kuwata, Koji Yamanaka, Shuichi Sakata, Hidetoshi Koyama, Yoshitaka Kamo, Akihiro Ando, Kazuhiko Nakahara, Hiroshi Fukumoto (Mitsubishi Electric) MW2014-54 OPE2014-23 EST2014-15 MWP2014-12
 [more] MW2014-54 OPE2014-23 EST2014-15 MWP2014-12
MW 2014-03-05
Ehime Ehime University An X-Band GaN High-Power Amplifier with Input and Output 2nd-harmonic Terminating Networks
Hiromitsu Uchida, Masatake Hangai, Koji Yamanaka, Hiroshi Fukumoto, Nobuhiro Kikuchi, Hidetoshi Koyama, Yoshitaka Kamo (Mitsubishi Electric) MW2013-219
 [more] MW2013-219
MW, ED 2013-01-18
Tokyo Kikai-Shinko-Kaikan Bldg. The study of SSPS GaN amplifier for high-efficiency operation by gate length
Yutaro Yamaguchi, Toshiyuki Oishi, Hiroshi Otsuka, Takaaki Yoshioka, Hidetoshi Koyama, Fuminori Samejima, Yoshinori Tsuyama, Koji Yamanaka (Mitsubishi Electric Corp.) ED2012-121 MW2012-151
In this paper, GaN HEMT high efficiency amplifier for Space Solar Power Stations/System (SSPS) is presented. 0.25μm gate... [more] ED2012-121 MW2012-151
MW 2012-03-01
Saga Saga University An X-band GaN High-Power Amplifier with a Parallel-Resonant 2nd-Harmonic Input Terminating Network
Hiromitsu Uchida, Hiroshi Otsuka, Koji Yamanaka, Hidetoshi Koyama, Masatoshi Nakayama, Yoshihito Hirano (Mitsubishi Electric Corp.) MW2011-174
 [more] MW2011-174
OPE, MW, MWP, EMT, EST, IEE-EMT [detail] 2011-07-22
Hokkaido   C-Ku band ultra broadband GaN MMIC amplifier with 20W output power
Eigo Kuwata, Koji Yamanaka, Hidetoshi Koyama, Tasuku Kirikoshi, Masatoshi Nakayama, Yoshihito Hirano (Melco) MW2011-59 OPE2011-46 EST2011-45 MWP2011-27
 [more] MW2011-59 OPE2011-46 EST2011-45 MWP2011-27
 Results 1 - 11 of 11  /   
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