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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, EID 2014-12-12
17:15
Kyoto Kyoto University Study of driving forces that cause resistive switching of binary transition metal oxide memory
Ryosuke Koishi, Takumi Moriyama, Kouhei Kimura, Kouki Kawano, Hidetoshi Miyashita, Sang-Seon Lee, Satoru Kishida, Kentaro Kinoshita (Tottori Univ.) EID2014-37 SDM2014-132
It is widely received that resistive switching of resistive random access memory (ReRAM) is caused by formation and rupt... [more] EID2014-37 SDM2014-132
pp.125-128
EID, ITE-IDY, IEIJ-SSL, IEE-EDD, SID-JC [detail] 2014-01-25
09:08
Niigata Niigata University in-situ pH monitoring at synthesis of the phosphor by microreactor method
Kenji Yamashina (Tottori Univ), Hiroshi Okura (Merck), Ryosuke Sakata, Ryohei Komiyama, Hidetoshi Miyashita, Sang-Seon Lee, Koutoku Ohmi (Tottori Univ) EID2013-18
Paying attention to the effect of pH in the phosphor by solution synthesis, using a microreactor for the purpose of stri... [more] EID2013-18
pp.65-68
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