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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
LQE |
2012-12-13 09:35 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Gain characterization of 19-stacked InGaAs/GaAs quantum dot laser diode fabricated by ultrahigh rate MBE growth technique Fumihiko Tanoue, Hiroharu Sugawara (Tokyo Metropolitan Univ.), Kouichi Akahane, Naokatsu Yamamoto (NICT) LQE2012-121 |
19-stacked InGaAs quantum dot (QD) laser diode was fabricated by using ultrahigh-rate molecular beam epitaxial (MBE) gro... [more] |
LQE2012-121 pp.1-4 |
CPM, OPE, LQE, EMD |
2011-08-26 13:55 |
Hokkaido |
Hokkaido Univ. |
Fabrication of highly stacked InGaAs/GaAs quantum dot laser diode for 1-um photonic waveband with ultrahigh rate MBE growth technique Fumihiko Tanoue, Hiroharu Sugawara (TMU), Kouichi Akahane, Naokatsu Yamamoto (NICT) EMD2011-54 CPM2011-98 OPE2011-89 LQE2011-52 |
[more] |
EMD2011-54 CPM2011-98 OPE2011-89 LQE2011-52 pp.113-116 |
OPE, EMT, LQE, PN, IEE-EMT |
2010-01-28 17:40 |
Kyoto |
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Fabrication of 1μm waveband high growth rate quantum dots laser for low threshold current Takuya Nakamura (Tokyo Metro Univ.), Kouichi Akahane, Naokatsu Yamamoto, Tetsuya Kawanishi (NICT), Hiroharu Sugawara (Tokyo Metro Univ.) PN2009-48 OPE2009-186 LQE2009-168 |
We fabricated and demonstrated semiconductor quantum dots laser operating at 1um waveband. Utilizing high rate MBE growt... [more] |
PN2009-48 OPE2009-186 LQE2009-168 pp.71-74 |
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