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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
EE |
2021-01-25 13:55 |
Online |
Online (Zoom) |
Analysis on the turn-on transient of cascode connected Polarization Super-Junction GaN-FET Daisuke Arai (Nagoya Univ.), Yusuke Kamiyama, Shuichi Yagi, Hiroji Kawai, Hironobu Narui (POWDEC), Jun Imaoka, Masayoshi Yamamoto (Nagoya Univ.) EE2020-32 |
The turn-on transient of the cascode connected Polarization Super-Junction (PSJ) GaN-FET with 1200V class has been inves... [more] |
EE2020-32 pp.47-52 |
CPM, LQE, ED |
2010-11-12 10:50 |
Osaka |
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Vertical GaN Diode on GaN Free-Standing Substrate Shuichi Yagi, Shoko Hirata, Yasunobu Sumida, Masahiro Bessho, Hiroji Kawai (POWDEC), Toshiharu Matsueda, Akira Usui (Furukawa Co., Ltd.) ED2010-156 CPM2010-122 LQE2010-112 |
We report the fabrication of schottky barrier diode (SBD) on GaN free-standing substrate. SBDs showed good DC operating... [more] |
ED2010-156 CPM2010-122 LQE2010-112 pp.63-66 |
ED |
2008-06-13 13:00 |
Ishikawa |
Kanazawa University |
Surface passivation of AlGaN/GaN heterojunction field-effect transistors by SiN/AlN bilayer structure Nariaki Tanaka (JAIST), Yasunobu Sumida, Hiroji Kawai (POWDEC), Toshi-kazu Suzuki (JAIST) ED2008-22 |
By using AlN single layer, SiN single layer, or SiN/AlN bilayer structure, we have investigated surface passivation of A... [more] |
ED2008-22 pp.1-4 |
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