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Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM, ED, SDM 2014-05-29
13:20
Aichi   Deep levels near the valence band in p-type 4H-SiC epilayers with various Al concentrations
Hiroki Nakane, Masashi Kato, Masaya Ichimura (NIT) ED2014-38 CPM2014-21 SDM2014-36
Understanding of the deep level is essential to control the carrier lifetime for ultrahigh-voltage SiC bipolar devices. ... [more] ED2014-38 CPM2014-21 SDM2014-36
pp.101-104
SDM, ED, CPM 2013-05-16
13:55
Shizuoka Shizuoka Univ. (Hamamatsu) Graduate School of Sci. and Technol. Identification of defect structures forming the deep levels in 4H-SiC
Hiroki Nakane, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech.), Takeshi Ohshima (JAEA) ED2013-17 CPM2013-2 SDM2013-24
(To be available after the conference date) [more] ED2013-17 CPM2013-2 SDM2013-24
pp.7-12
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